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T2G6000528-Q3 28V

T2G6000528-Q3 28V
Mfr. #:
T2G6000528-Q3 28V
Fabricante:
Qorvo
Descripción:
RF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
T2G6000528-Q3 28V Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
T2G6000528-Q3 28V más información
Atributo del producto
Valor de atributo
Fabricante
TriQuint (Qorvo)
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
T2G
embalaje
Bandeja
Alias ​​de parte
1099997
Tecnología
GaN SiC
Tipo transistor
HEMT
Tags
T2G6000528-Q, T2G6000, T2G6, T2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descripción Valores Precio
T2G6000528-Q3 28V
DISTI # 772-T2G6000528-Q328V		QorvoRF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
RoHS: Compliant		75
  • 1:$80.4000
  • 25:$68.0500
  • 100:$57.6000
Imagen Parte # Descripción
T2G6000528-Q3

Mfr.#: T2G6000528-Q3

OMO.#: OMO-T2G6000528-Q3

 RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
T2G6000528-Q3 28V

Mfr.#: T2G6000528-Q3 28V

OMO.#: OMO-T2G6000528-Q3-28V

 RF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
T2G6000528-Q3 28V

Mfr.#: T2G6000528-Q3 28V

OMO.#: OMO-T2G6000528-Q3-28V-318

 RF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
T2G6000528-Q3

Mfr.#: T2G6000528-Q3

OMO.#: OMO-T2G6000528-Q3-1152

 RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
T2G6000528-Q3, EVAL BOAR

Mfr.#: T2G6000528-Q3, EVAL BOAR

OMO.#: OMO-T2G6000528-Q3-EVAL-BOAR-1190

 Nuevo y original
T2G6000528-Q3-EVB3 3.0-3

Mfr.#: T2G6000528-Q3-EVB3 3.0-3

OMO.#: OMO-T2G6000528-Q3-EVB3-3-0-3-1190

 Nuevo y original
T2G6000528-XCC-1-Q3

Mfr.#: T2G6000528-XCC-1-Q3

OMO.#: OMO-T2G6000528-XCC-1-Q3-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de T2G6000528-Q3 28V es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
86,40 US$
86,40 US$
10
82,08 US$
820,80 US$
100
77,76 US$
7 776,00 US$
500
73,44 US$
36 720,00 US$
1000
69,12 US$
69 120,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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