A2T18H160-24SR3

A2T18H160-24SR3
Mfr. #:
A2T18H160-24SR3
Fabricante:
NXP / Freescale
Descripción:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 28 W Avg., 28 V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
A2T18H160-24SR3 Ficha de datos
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HTML Datasheet:
A2T18H160-24SR3 DatasheetA2T18H160-24SR3 Datasheet (P4-P6)A2T18H160-24SR3 Datasheet (P7-P9)A2T18H160-24SR3 Datasheet (P10-P12)A2T18H160-24SR3 Datasheet (P13-P15)A2T18H160-24SR3 Datasheet (P16)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
Polaridad del transistor:
Canal N
Tecnología:
Si
Id - Corriente de drenaje continua:
600 mA, 1 A
Vds - Voltaje de ruptura de drenaje-fuente:
- 500 mV, 65 V
Ganar:
17.9 dB
Potencia de salida:
28 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
NI-780S-4L2L-6
Embalaje:
Carrete
Frecuencia de operación:
1.805 GHz to 1.88 GHz
Escribe:
RF Power MOSFET
Marca:
NXP / Freescale
Número de canales:
2 Channel
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
250
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
- 6 V, 10 V
Vgs th - Voltaje umbral puerta-fuente:
1.2 V
Parte # Alias:
935316045128
Unidad de peso:
0.164793 oz
Tags
A2T18H1, A2T18H, A2T18, A2T1, A2T
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 28 W Avg., 28 V
***W
RF Power Transistor,1805 to 1880 MHz, 126 W, Typ Gain in dB is 17.9 @ 1805 MHz, 28 V, LDMOS, SOT1799
***et Europe
A2T18H160-24S/CFM6F/REEL 13" Q
Parte # Mfg. Descripción Valores Precio
A2T18H160-24SR3
DISTI # A2T18H160-24SR3-ND
NXP SemiconductorsIC TRANS RF LDMOS
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 250:$92.3116
A2T18H160-24SR3
DISTI # A2T18H160-24SR3
Avnet, Inc.A2T18H160-24S/CFM6F/REEL 13" Q - Tape and Reel (Alt: A2T18H160-24SR3)
RoHS: Compliant
Min Qty: 250
Container: Reel
Americas - 0
  • 250:$101.0900
  • 500:$97.1900
  • 1000:$93.3900
  • 1500:$89.9900
  • 2500:$88.2900
A2T18H160-24SR3
DISTI # A2T18H160-24SR3
Avnet, Inc.A2T18H160-24S/CFM6F/REEL 13" Q (Alt: A2T18H160-24SR3)
RoHS: Compliant
Min Qty: 250
Container: Reel
Asia - 0
  • 250:$99.1531
  • 500:$96.3989
  • 750:$93.7935
  • 1250:$91.3253
  • 2500:$90.1392
  • 6250:$88.9836
  • 12500:$86.7590
A2T18H160-24SR3
DISTI # A2T18H160-24SR3
Avnet, Inc.A2T18H160-24S/CFM6F/REEL 13" Q (Alt: A2T18H160-24SR3)
RoHS: Compliant
Min Qty: 1
Container: Reel
Europe - 0
  • 1:€92.8900
  • 10:€91.1900
  • 25:€88.3900
  • 50:€85.4900
  • 100:€84.9900
  • 500:€84.3900
  • 1000:€83.3900
A2T18H160-24SR3
DISTI # 841-A2T18H160-24SR3
NXP SemiconductorsRF MOSFET Transistors A2T18H160-24S/CFM6F///REEL 13 Q2 NDP
RoHS: Compliant
0
  • 250:$90.2400
A2T18H160-24SR3
DISTI # A2T18H160-24SR3
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
166
  • 1:$116.0600
  • 10:$107.2600
  • 25:$104.1100
Imagen Parte # Descripción
A2T18H100-25SR3

Mfr.#: A2T18H100-25SR3

OMO.#: OMO-A2T18H100-25SR3

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1995 MHz, 15 W Avg., 28 V
A2T18H160-24SR3

Mfr.#: A2T18H160-24SR3

OMO.#: OMO-A2T18H160-24SR3

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 28 W Avg., 28 V
A2T18H100-25SR3

Mfr.#: A2T18H100-25SR3

OMO.#: OMO-A2T18H100-25SR3-NXP-SEMICONDUCTORS

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1995 MHz, 15 W Avg., 28 V
A2T18H160-24SR3

Mfr.#: A2T18H160-24SR3

OMO.#: OMO-A2T18H160-24SR3-NXP-SEMICONDUCTORS

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 28 W Avg, 28 V
A2T18H160-24S

Mfr.#: A2T18H160-24S

OMO.#: OMO-A2T18H160-24S-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
1500
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