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FDP86363_F085

FDP86363_F085
Mfr. #:
FDP86363_F085
Fabricante:
Rochester Electronics, LLC
Descripción:
Trans MOSFET N-CH 80V 110A 3-Pin TO-220 Tube - Bulk (Alt: FDP86363_F085)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDP86363_F085 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
FDP8, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 80V 110A Automotive 3-Pin(3+Tab) TO-220 Rail
***ark
Rail / N-Channel Powertrench Mosfet
***et
Transistor MOSFET N-CH 80V 120A 3-Pin TO-220 Tube
***ineon SCT
80V, N-Ch, 2.5 mΩ max, Automotive MOSFET, TO-220, OptiMOS™-T2, PG-TO220-3, RoHS
***ark
Mosfet, Aec-Q101, N-Ch, 80V, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0024Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested
***ical
Trans MOSFET N-CH Si 80V 211A 3-Pin(3+Tab) TO-220 Tube
***enic
80V 120A 263W 3.3m´Î@10V100A 4.5V@250A N Channel TO-220(TO-220-3) MOSFETs ROHS
***emi
N-Channel PowerTrench® MOSFET 80V, 211A, 3.3mΩ
***r Electronics
Power Field-Effect Transistor, 120A I(D), 80V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ure Electronics
Single N-Channel 60 V 3.1 mOhm 99 nC 205 W Flange Mount Mosfet - TO-220-3
***ical
Trans MOSFET N-CH Si 60V 195A 3-Pin(3+Tab) TO-220 Tube
***emi
N-Channel PowerTrench® MOSFET 60V, 195A, 3.1mΩ
***r Electronics
Power Field-Effect Transistor, 120A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ineon SCT
60V, N-Ch, 2.4 mΩ max, Automotive MOSFET, TO-220, OptiMOS™-T2, PG-TO220-3, RoHS
***et
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220
***ineon
Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***et Europe
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220
***i-Key
MOSFET N-CH 60V 120A TO220-3
***ronik
MOSFET 60V 2.8mOHM AECQ TO220
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
*** Electronics
N-CHANNEL POWER MOSFET
***S
new, original packaged
***et
Transistor MOSFET N-Channel 60V 120A 3-Pin TO-220AB
***el Electronic
TRIAC SENS GATE 800V 8A TO220AB
***peria
N-channel TrenchMOS standard level FET
Parte # Mfg. Descripción Valores Precio
FDP86363-F085
DISTI # V36:1790_06359104		ON SemiconductorN-CHANNEL POWERTRENCH MOSFET0
    FDP86363-F085
    DISTI # FDP86363-F085-ND    		ON SemiconductorMOSFET N-CH 80V 110A TO-220
    RoHS: Compliant
    Container: Tube    		Temporarily Out of Stock
      FDP86363_F085
      DISTI # FDP86363_F085      		ON SemiconductorTrans MOSFET N-CH 80V 110A 3-Pin TO-220 Tube - Bulk (Alt: FDP86363_F085)
      Min Qty: 220
      Container: Bulk      		Americas - 0
      • 220:$1.3900
      • 440:$1.3900
      • 660:$1.3900
      • 1100:$1.3900
      • 2200:$1.3900
      FDP86363_F085
      DISTI # FDP86363-F085      		ON SemiconductorTrans MOSFET N-CH 80V 110A 3-Pin TO-220 Tube - Bulk (Alt: FDP86363-F085)
      Min Qty: 199
      Container: Bulk      		Americas - 0
      • 995:$1.4900
      • 1990:$1.4900
      • 199:$1.5900
      • 398:$1.5900
      • 597:$1.5900
      FDP86363_F085
      DISTI # FDP86363-F085      		ON SemiconductorTrans MOSFET N-CH 80V 110A 3-Pin TO-220 Tube - Rail/Tube (Alt: FDP86363-F085)
      RoHS: Compliant
      Min Qty: 400
      Container: Tube      		Americas - 0
        FDP86363-F085
        DISTI # 512-FDP86363_F085        		ON SemiconductorMOSFET NMOS TO220 80V 2.8 MOHM
        RoHS: Compliant        		306
        • 1:$3.3200
        • 10:$2.8200
        • 100:$2.4400
        • 250:$2.3200
        • 500:$2.0800
        • 1000:$1.7600
        • 2500:$1.6700
        FDP86363-F085Fairchild Semiconductor CorporationPower Field-Effect Transistor, 110A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        RoHS: Compliant        		66
        • 1000:$1.6600
        • 500:$1.7500
        • 100:$1.8200
        • 25:$1.9000
        • 1:$2.0400
        FDP86363_F085Fairchild Semiconductor CorporationPower Field-Effect Transistor, 110A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        RoHS: Compliant        		99
        • 1000:$1.5000
        • 500:$1.5800
        • 100:$1.6400
        • 25:$1.7100
        • 1:$1.8500
        Imagen Parte # Descripción
        FDP86363-F085

        Mfr.#: FDP86363-F085

        OMO.#: OMO-FDP86363-F085

        		 MOSFET NMOS TO220 80V 2.8 MOHM
        FDP86363_F085

        Mfr.#: FDP86363_F085

        OMO.#: OMO-FDP86363-F085-1190

        		 Trans MOSFET N-CH 80V 110A 3-Pin TO-220 Tube - Bulk (Alt: FDP86363_F085)
        FDP86363-F085

        Mfr.#: FDP86363-F085

        OMO.#: OMO-FDP86363-F085-ON-SEMICONDUCTOR

        		 N-CHANNEL POWERTRENCH MOSFET
        Disponibilidad
        Valores:
        Available
        En orden:
        5000
        Ingrese la cantidad:
        El precio actual de FDP86363_F085 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        2,08 US$
        2,08 US$
        10
        1,98 US$
        19,81 US$
        100
        1,88 US$
        187,65 US$
        500
        1,77 US$
        886,15 US$
        1000
        1,67 US$
        1 668,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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