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FGA20N120FTDTU

FGA20N120FTDTU
Mfr. #:
FGA20N120FTDTU
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors 1200V N-Chan Trench
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FGA20N120FTDTU Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FGA20N120FTDTU más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-3PN-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje máximo del emisor de puerta:
25 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
FGA20N120FTD
Embalaje:
Tubo
Corriente continua de colector Ic Max:
40 A
Altura:
18.9 mm
Longitud:
15.8 mm
Ancho:
5 mm
Marca:
ON Semiconductor / Fairchild
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
450
Subcategoría:
IGBT
Unidad de peso:
0.225789 oz
Tags
FGA20N120FT, FGA20N120F, FGA20N, FGA20, FGA2, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
FGA20N120FTD Series 1200 V 40 A Field Stop Trench IGBT-TO-3PN
***ow.cn
Trans IGBT Chip N-CH 1200V 40A 298000mW 3-Pin(3+Tab) TO-3P Tube
***emi
IGBT, 1200V, 20A, Field Stop Trench
***ark
Igbt, 1.2Kv, 40A, 150Deg C, 298W Rohs Compliant: Yes
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel
***rchild Semiconductor
Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven.
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Field Stop Trench IGBTs
ON Semiconductor's FGA20N120FTD and FGA15N120FTD 1200V field stop trench IGBTs maximize efficiency by limiting conduction and switching losses. The devices include a built-in fast-recovery diode (FRD) optimized for zero voltage switching technology and high avalanche capability for extended operational life. The devices' field stop structure and advanced Trench gate cell design enable tight parameter distribution for reduced performance variation.
Parte # Mfg. Descripción Valores Precio
FGA20N120FTDTU
DISTI # V99:2348_06358976		ON SemiconductorN-CH / 20A 1200V FS TRENCH IGB900
  • 1000:$2.2550
  • 500:$2.6429
  • 100:$3.1070
  • 10:$3.5820
  • 1:$4.6211
FGA20N120FTDTU
DISTI # V36:1790_06358976		ON SemiconductorN-CH / 20A 1200V FS TRENCH IGB0
    FGA20N120FTDTU
    DISTI # FGA20N120FTDTUFS-ND    		ON SemiconductorIGBT 1200V 40A 298W TO3PN
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		2684In Stock
    • 2700:$2.2400
    • 900:$2.7888
    • 450:$3.1080
    • 25:$3.7800
    • 10:$3.9980
    • 1:$4.4500
    FGA20N120FTDTU
    DISTI # 31011290    		ON SemiconductorN-CH / 20A 1200V FS TRENCH IGB900
    • 1000:$2.4241
    • 500:$2.8411
    • 100:$3.3368
    • 10:$3.8506
    • 3:$4.5160
    FGA20N120FTDTU
    DISTI # 33145128    		ON SemiconductorN-CH / 20A 1200V FS TRENCH IGB900
    • 450:$3.2175
    FGA20N120FTDTU
    DISTI # FGA20N120FTDTU    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FGA20N120FTDTU)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1000:€1.7900
    • 500:€1.8900
    • 100:€1.9900
    • 50:€2.0900
    • 25:€2.1900
    • 10:€2.2900
    • 1:€2.4900
    FGA20N120FTDTU
    DISTI # FGA20N120FTDTU    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-3P(N) Rail - Bulk (Alt: FGA20N120FTDTU)
    Min Qty: 1
    Container: Bulk    		Americas - 0
      FGA20N120FTDTU
      DISTI # FGA20N120FTDTU      		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA20N120FTDTU)
      RoHS: Compliant
      Min Qty: 450
      Container: Tube      		Americas - 0
      • 4500:$1.8900
      • 450:$1.9900
      • 900:$1.9900
      • 1800:$1.9900
      • 2700:$1.9900
      FGA20N120FTDTU
      DISTI # 84M7989      		ON SemiconductorTRANSISTOR,IGBT,N-CHAN+DIODE,1.2kV V(BR)CES,40A I(C),TO-247var0
      • 10000:$2.1600
      • 2500:$2.2900
      • 1000:$2.4000
      • 500:$2.8200
      • 100:$3.1200
      • 10:$3.7600
      • 1:$4.6400
      FGA20N120FTDTU
      DISTI # 512-FGA20N120FTDTU      		ON SemiconductorIGBT Transistors 1200V N-Chan Trench
      RoHS: Compliant      		1054
      • 1:$4.2300
      • 10:$3.6000
      • 100:$3.1200
      • 250:$2.9600
      • 500:$2.6500
      FGA20N120FTDTU
      DISTI # 6715391      		ON SemiconductorTRANSISTOR IGBT N-CH 1.2KV 40A TO-3P(N), EA381
      • 500:£1.5600
      • 250:£1.6100
      • 100:£1.6900
      • 25:£1.9500
      • 1:£3.4400
      FGA20N120FTDTU
      DISTI # 6715391P      		ON SemiconductorTRANSISTOR IGBT N-CH 1.2KV 40A TO-3P(N), TU472
      • 500:£1.5600
      • 250:£1.6100
      • 100:£1.6900
      • 25:£1.9500
      FGA20N120FTDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel
      RoHS: Compliant      		Europe - 450
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        Disponibilidad
        Valores:
        Available
        En orden:
        1984
        Ingrese la cantidad:
        El precio actual de FGA20N120FTDTU es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        4,23 US$
        4,23 US$
        10
        3,60 US$
        36,00 US$
        100
        3,12 US$
        312,00 US$
        250
        2,96 US$
        740,00 US$
        500
        2,65 US$
        1 325,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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