FDMS5352

FDMS5352
Mfr. #:
FDMS5352
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 60V N-Channel PowerTrench
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDMS5352 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FDMS5352 más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
Power-56-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
13.6 A
Rds On - Resistencia de la fuente de drenaje:
6.7 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.5 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
PowerTrench
Embalaje:
Carrete
Altura:
1.1 mm
Longitud:
6 mm
Serie:
FDMS5352
Tipo de transistor:
1 N-Channel
Ancho:
5 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
7 ns
Tipo de producto:
MOSFET
Hora de levantarse:
11 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
58 ns
Tiempo típico de retardo de encendido:
19 ns
Unidad de peso:
0.002402 oz
Tags
FDMS53, FDMS5, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET,N CH,60V,13.6A,POWER56; Transistor Polarity:N Channel; Continuous Drain C
***emi
N-Channel Power Trench® MOSFET 60V, 49A, 6.7mΩ
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET,N CH,60V,13.6A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (19-Dec-2011)
***ure Electronics
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***emi
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***r Electronics
Power Field-Effect Transistor, 11.5A I(D), 60V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, N CH, 60V, 50A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0101ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:69W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
*** Source Electronics
MOSFET N CH 60V 13.5A 8PQFN / Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
***emi
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***ure Electronics
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*** Stop Electro
Power Field-Effect Transistor, 13.5A I(D), 60V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 60V, 22A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
***ark
Mosfet Transistor, Dual N Channel, 15 A, 60 V, 0.047 Ohm, 10 V, 2 V
***ical
Trans MOSFET N-CH 60V 15A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
***nell
MOSFET, 2 N CH, 60V, 15A, POWERPAK SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 15A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 34W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C
***ure Electronics
N-Channel 60 V 0.07 Ohm Surface Mount STripFET™ II Power MosFet - TO-252-3
***r Electronics
Power Field-Effect Transistor, 16A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ark
MOSFET, N CH, 60V, 16A, TO-252, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
***ical
Trans MOSFET N-CH 60V 15A Automotive 3-Pin(2+Tab) DPAK T/R
***i-Key
MOSFET N-CH 60V 15A TO252
***ment14 APAC
MOSFET,N CH,W DIODE,60V,15A,TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:33W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V
***
60V N-CHANNEL
***ow.cn
Trans MOSFET P-CH 60V 16A Automotive 8-Pin PowerPAK 1212 T/R
*** Electronics
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
***roFlash
Power Field-Effect Transistor, 16A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
*** Stop Electro
Power Field-Effect Transistors
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FDMS5352
DISTI # V72:2272_06338066
ON SemiconductorTrans MOSFET N-CH Si 60V 13.6A 8-Pin Power 56 T/R0
    FDMS5352
    DISTI # V36:1790_06338066
    ON SemiconductorTrans MOSFET N-CH Si 60V 13.6A 8-Pin Power 56 T/R0
    • 3000000:$1.1070
    • 1500000:$1.1080
    • 300000:$1.1810
    • 30000:$1.2870
    • 3000:$1.3040
    FDMS5352
    DISTI # FDMS5352CT-ND
    ON SemiconductorMOSFET N-CH 60V 13.6A POWER56
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    6194In Stock
    • 1000:$1.4427
    • 500:$1.7412
    • 100:$2.1193
    • 10:$2.6370
    • 1:$2.9400
    FDMS5352
    DISTI # FDMS5352DKR-ND
    ON SemiconductorMOSFET N-CH 60V 13.6A POWER56
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    6194In Stock
    • 1000:$1.4427
    • 500:$1.7412
    • 100:$2.1193
    • 10:$2.6370
    • 1:$2.9400
    FDMS5352
    DISTI # FDMS5352TR-ND
    ON SemiconductorMOSFET N-CH 60V 13.6A POWER56
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    6000In Stock
    • 6000:$1.2558
    • 3000:$1.3041
    FDMS5352
    DISTI # FDMS5352
    ON SemiconductorTrans MOSFET N-CH 60V 13.6A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS5352)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 6000:$1.0900
    • 12000:$1.0900
    • 18000:$1.0900
    • 30000:$1.0900
    • 3000:$1.1900
    FDMS5352
    DISTI # FDMS5352
    ON SemiconductorTrans MOSFET N-CH 60V 13.6A 8-Pin Power 56 T/R (Alt: FDMS5352)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 30000:€1.0659
    • 18000:€1.1419
    • 12000:€1.2299
    • 6000:€1.3329
    • 3000:€1.5999
    FDMS5352
    DISTI # FDMS5352
    ON SemiconductorTrans MOSFET N-CH 60V 13.6A 8-Pin Power 56 T/R - Bulk (Alt: FDMS5352)
    RoHS: Compliant
    Min Qty: 246
    Container: Bulk
    Americas - 0
    • 1230:$1.1900
    • 2460:$1.1900
    • 246:$1.2900
    • 492:$1.2900
    • 738:$1.2900
    FDMS5352
    DISTI # 08N9285
    ON SemiconductorMOSFET Transistor, N Channel, 13.6 A, 60 V, 0.0056 ohm, 10 V, 1.8 V0
    • 30000:$1.1500
    • 18000:$1.2000
    • 12000:$1.2500
    • 6000:$1.3800
    • 3000:$1.4600
    • 1:$1.5500
    FDMS5352
    DISTI # 512-FDMS5352
    ON SemiconductorMOSFET 60V N-Channel PowerTrench
    RoHS: Compliant
    6298
    • 1:$2.7000
    • 10:$2.3000
    • 100:$1.8400
    • 500:$1.6100
    • 1000:$1.3300
    • 3000:$1.2400
    • 6000:$1.1900
    FDMS5352Fairchild Semiconductor CorporationPower Field-Effect Transistor, 13.6A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    18583
    • 1000:$1.3400
    • 500:$1.4100
    • 100:$1.4700
    • 25:$1.5300
    • 1:$1.6500
    FDMS5352
    DISTI # FDMS5352
    ON SemiconductorTransistor: N-MOSFET,unipolar,60V,49A,104W,PQFN82848
    • 500:$1.6600
    • 100:$1.7800
    • 25:$1.9700
    • 5:$2.4600
    • 1:$2.8600
    Imagen Parte # Descripción
    EPCQ128ASI16N

    Mfr.#: EPCQ128ASI16N

    OMO.#: OMO-EPCQ128ASI16N

    FPGA - Configuration Memory
    HCPL-M453-500E

    Mfr.#: HCPL-M453-500E

    OMO.#: OMO-HCPL-M453-500E

    High Speed Optocouplers 1MBd 3750Vdc
    2N7002K-T1-E3

    Mfr.#: 2N7002K-T1-E3

    OMO.#: OMO-2N7002K-T1-E3

    MOSFET 60V Vds 20V Vgs SOT-23
    IRFH5110TRPBF

    Mfr.#: IRFH5110TRPBF

    OMO.#: OMO-IRFH5110TRPBF

    MOSFET 100V 1 N-CH HEXFET 12.4mOhms 48nC
    BAT54HT1G

    Mfr.#: BAT54HT1G

    OMO.#: OMO-BAT54HT1G

    Schottky Diodes & Rectifiers 30V 200mW Single
    TPS7A9001DSKR

    Mfr.#: TPS7A9001DSKR

    OMO.#: OMO-TPS7A9001DSKR

    LDO Voltage Regulators ULTRA LOW NOISE 0.5A LDO WITH PG
    C1210W104KCRACTU

    Mfr.#: C1210W104KCRACTU

    OMO.#: OMO-C1210W104KCRACTU

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 500V 0.1uF X7R 1210 10%
    RJE7318800140

    Mfr.#: RJE7318800140

    OMO.#: OMO-RJE7318800140-402

    Modular Connectors / Ethernet Connectors Mod Jack 1 Port 8P8C Shielded w/o Tabs
    HCPL-M453-500E

    Mfr.#: HCPL-M453-500E

    OMO.#: OMO-HCPL-M453-500E-BROADCOM

    High Speed Optocouplers 1MBd 3750Vdc
    2N7002K-T1-E3

    Mfr.#: 2N7002K-T1-E3

    OMO.#: OMO-2N7002K-T1-E3-VISHAY

    MOSFET N-CH 60V 300MA SOT-23
    Disponibilidad
    Valores:
    Available
    En orden:
    1989
    Ingrese la cantidad:
    El precio actual de FDMS5352 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,70 US$
    2,70 US$
    10
    2,30 US$
    23,00 US$
    100
    1,84 US$
    184,00 US$
    500
    1,61 US$
    805,00 US$
    1000
    1,33 US$
    1 330,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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