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STGD6M65DF2

STGD6M65DF2
Mfr. #:
STGD6M65DF2
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors PTD HIGH VOLTAGE
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGD6M65DF2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STGD6M65DF2 más información STGD6M65DF2 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
DPAK-3
Estilo de montaje:
SMD / SMT
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.55 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
12 A
Pd - Disipación de energía:
88 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
STGD6M65DF2
Embalaje:
Carrete
Corriente continua de colector Ic Max:
12 A
Marca:
STMicroelectronics
Corriente de fuga puerta-emisor:
+/- 250 uA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
2500
Subcategoría:
IGBT
Tags
STGD6, STGD, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Insulated Gate Bipolar Transistor, 12A I(C), 650V V(BR)CES, N-Channel, TO-252
***icroelectronics
Trench gate field-stop IGBT, M series 650 V, 6 A low loss
***ical
Trans IGBT Chip N-CH 650V 12A 88000mW 3-Pin(2+Tab) DPAK T/R
***ure Electronics
IGBT Trench Field Stop 650 V 12 A 88 W Surface Mount DPAK
*** Electronic Components
IGBT Transistors PTD HIGH VOLTAGE
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
Parte # Mfg. Descripción Valores Precio
STGD6M65DF2
DISTI # 497-16966-2-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, M S
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 5000:$0.5406
  • 2500:$0.5644
STGD6M65DF2
DISTI # 497-16966-1-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, M S
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.6181
  • 500:$0.7652
  • 100:$0.9122
  • 10:$1.1520
  • 1:$1.2800
STGD6M65DF2
DISTI # 497-16966-6-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, M S
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.6181
  • 500:$0.7652
  • 100:$0.9122
  • 10:$1.1520
  • 1:$1.2800
STGD6M65DF2
DISTI # STGD6M65DF2		STMicroelectronicsTrans IGBT Chip N 650V 12A 3-Pin DPAK T/R - Bulk (Alt: STGD6M65DF2)
RoHS: Compliant
Min Qty: 2500
Container: Bulk		Americas - 0
  • 2500:$0.5089
  • 5000:$0.4849
  • 10000:$0.4629
  • 15000:$0.4429
  • 25000:$0.4339
STGD6M65DF2
DISTI # 511-STGD6M65DF2		STMicroelectronicsIGBT Transistors PTD HIGH VOLTAGE
RoHS: Compliant		0
  • 1:$1.1200
  • 10:$0.9520
  • 100:$0.7320
  • 500:$0.6470
  • 1000:$0.5100
  • 2500:$0.4530
STGD6M65DF2
DISTI # IGBT2169		STMicroelectronicsIGBT650V6A1.9VDPAK
RoHS: Compliant		Stock DE - 0Stock US - 0
  • 2500:$0.6141
  • 5000:$0.5763
  • 7500:$0.5574
Imagen Parte # Descripción
STGD6M65DF2

Mfr.#: STGD6M65DF2

OMO.#: OMO-STGD6M65DF2

 IGBT Transistors PTD HIGH VOLTAGE
STGD6NC60H-1

Mfr.#: STGD6NC60H-1

OMO.#: OMO-STGD6NC60H-1

 IGBT Transistors N-channel 600 V, 7 A very fast IGBT
STGD6NC60HDT4

Mfr.#: STGD6NC60HDT4

OMO.#: OMO-STGD6NC60HDT4

 IGBT Transistors PowerMESH&#34 IGBT
STGD6NC60HDT4

Mfr.#: STGD6NC60HDT4

OMO.#: OMO-STGD6NC60HDT4-STMICROELECTRONICS

 IGBT 600V 15A 56W DPAK
STGD6NC60H-1

Mfr.#: STGD6NC60H-1

OMO.#: OMO-STGD6NC60H-1-STMICROELECTRONICS

 IGBT Transistors IGBT & Power Bipola
STGD6NC60HDT4-CUT TAPE

Mfr.#: STGD6NC60HDT4-CUT TAPE

OMO.#: OMO-STGD6NC60HDT4-CUT-TAPE-1190

 Nuevo y original
STGD6N60

Mfr.#: STGD6N60

OMO.#: OMO-STGD6N60-1190

 Nuevo y original
STGD6NC60HT4

Mfr.#: STGD6NC60HT4

OMO.#: OMO-STGD6NC60HT4-STMICROELECTRONICS

 IGBT 600V 15A 56W DPAK
STGD6NC60H_07

Mfr.#: STGD6NC60H_07

OMO.#: OMO-STGD6NC60H-07-1190

 Nuevo y original
STGD6NC6HDT4

Mfr.#: STGD6NC6HDT4

OMO.#: OMO-STGD6NC6HDT4-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de STGD6M65DF2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,11 US$
1,11 US$
10
0,95 US$
9,52 US$
100
0,73 US$
73,20 US$
500
0,65 US$
323,50 US$
1000
0,51 US$
510,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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