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IPP027N08N5AKSA1

IPP027N08N5AKSA1
Mfr. #:
IPP027N08N5AKSA1
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors MOSFET N-Ch 80V 120A TO220-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPP027N08N5AKSA1 Ficha de datos
Entrega:
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Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPP027N08N5AKSA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Tubo
Alias ​​de parte
IPP027N08N5 SP001132484
Unidad de peso
0.211644 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-220-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
214 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
15 ns
Hora de levantarse
14 ns
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
120 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Resistencia a la fuente de desagüe de Rds
3.4 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
46 ns
Tiempo de retardo de encendido típico
22 ns
Qg-Gate-Charge
99 nC
Transconductancia directa-Mín.
89 S
Modo de canal
Mejora
Tags
IPP02, IPP0, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 80V 120A Automotive 3-Pin(3+Tab) TO-220 Tube
***i-Key
MOSFET N-CH TO220-3
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Parte # Mfg. Descripción Valores Precio
IPP027N08N5AKSA1
DISTI # V99:2348_06378743		Infineon Technologies AGTrans MOSFET N-CH 80V 120A Automotive 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		500
  • 500:$2.0490
  • 250:$2.2640
  • 100:$2.3870
  • 10:$2.7130
  • 1:$3.1260
IPP027N08N5AKSA1
DISTI # IPP027N08N5AKSA1-ND		Infineon Technologies AGMOSFET N-CH TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$2.6517
IPP027N08N5AKSA1
DISTI # 26197492		Infineon Technologies AGTrans MOSFET N-CH 80V 120A Automotive 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		500
  • 500:$2.0490
  • 250:$2.2640
  • 100:$2.3870
  • 10:$2.7130
  • 4:$3.1260
IPP027N08N5AKSA1
DISTI # IPP027N08N5AKSA1		Infineon Technologies AGMV POWER MOS - Rail/Tube (Alt: IPP027N08N5AKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$1.9900
  • 1000:$1.9900
  • 2000:$1.8900
  • 3000:$1.7900
  • 5000:$1.7900
IPP027N08N5AKSA1Infineon Technologies AG 
RoHS: Not Compliant		14326
  • 1000:$1.7500
  • 500:$1.8400
  • 100:$1.9200
  • 25:$2.0000
  • 1:$2.1500
IPP027N08N5AKSA1
DISTI # 726-IPP027N08N5AKSA1		Infineon Technologies AGMOSFET N-Ch 80V 120A TO220-3
RoHS: Compliant		151
  • 1:$3.5300
  • 10:$3.0000
  • 100:$2.6000
IPP027N08N5AKSA1
DISTI # C1S322000624377		Infineon Technologies AGMOSFETs500
  • 500:$2.0490
  • 250:$2.2640
  • 100:$2.3870
  • 10:$2.7130
  • 1:$3.1260
Imagen Parte # Descripción
IPP027N08N5AKSA1

Mfr.#: IPP027N08N5AKSA1

OMO.#: OMO-IPP027N08N5AKSA1

 MOSFET N-Ch 80V 120A TO220-3
IPP027N08N5AKSA1

Mfr.#: IPP027N08N5AKSA1

OMO.#: OMO-IPP027N08N5AKSA1-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET N-Ch 80V 120A TO220-3
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de IPP027N08N5AKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,68 US$
2,68 US$
10
2,55 US$
25,51 US$
100
2,42 US$
241,65 US$
500
2,28 US$
1 141,15 US$
1000
2,15 US$
2 148,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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