AFIC31025GNR1

AFIC31025GNR1
Mfr. #:
AFIC31025GNR1
Fabricante:
NXP Semiconductors
Descripción:
RF MOSFET Transistors Airfast RF Power Integrated Power Amplifier, 25 W Pulse over 2400-3100 MHz, 32 V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AFIC31025GNR1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
AFIC31025GNR1 más información AFIC31025GNR1 Product Details
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
Polaridad del transistor:
Canal N dual
Tecnología:
Si
Id - Corriente de drenaje continua:
200 mA
Vds - Voltaje de ruptura de drenaje-fuente:
- 500 mV, 65 V
Ganar:
31.9 dB
Potencia de salida:
25 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-270WBG-17
Embalaje:
Carrete
Frecuencia de operación:
2400 MHz to 3100 MHz
Escribe:
RF Power MOSFET
Marca:
Semiconductores NXP
Número de canales:
2 Channel
Sensible a la humedad:
Yes
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
- 0.5 V, 10 V
Vgs th - Voltaje umbral puerta-fuente:
0.8 V
Parte # Alias:
935343961528
Unidad de peso:
0.021097 oz
Tags
AFIC, AFI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 2.5 W Avg., 28 V
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AIRFAST RF POWER LDMOS TRANSISTO
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RF POWER TRANSISTOR
Parte # Mfg. Descripción Valores Precio
AFIC31025GNR1
DISTI # AFIC31025GNR1-ND
NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 500:$43.6131
AFIC31025GNR1
DISTI # AFIC31025GNR1
Avnet, Inc.Airfast RF Power LDMOS Transistor 2300 to 2690MHz 2.5W 28V TO-270WBG-17 T/R (Alt: AFIC31025GNR1)
RoHS: Compliant
Min Qty: 500
Container: Tape and Reel
Europe - 0
  • 5000:€36.6900
  • 3000:€37.6900
  • 2000:€38.8900
  • 1000:€40.1900
  • 500:€40.8900
AFIC31025GNR1
DISTI # AFIC31025GNR1
Avnet, Inc.Airfast RF Power LDMOS Transistor 2300 to 2690MHz 2.5W 28V TO-270WBG-17 T/R - Tape and Reel (Alt: AFIC31025GNR1)
RoHS: Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 5000:$37.8900
  • 3000:$38.5900
  • 2000:$40.0900
  • 1000:$41.6900
  • 500:$43.3900
AFIC31025GNR1
DISTI # 771-AFIC31025GNR1
NXP SemiconductorsRF MOSFET Transistors AFIC31025GN/FM17F///REEL 13 Q2 DP0
  • 500:$36.8900
AFIC31025GNR1
DISTI # AFIC31025GNR1
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
387
  • 1:$64.7000
  • 10:$58.4800
  • 25:$55.2800
Imagen Parte # Descripción
AFIC31025NR1

Mfr.#: AFIC31025NR1

OMO.#: OMO-AFIC31025NR1

RF MOSFET Transistors Airfast RF Power Integrated Power Amplifier, 25 W Pulse over 2400-3100 MHz, 32 V
AFIC31025GNR1

Mfr.#: AFIC31025GNR1

OMO.#: OMO-AFIC31025GNR1

RF MOSFET Transistors Airfast RF Power Integrated Power Amplifier, 25 W Pulse over 2400-3100 MHz, 32 V
AFIC31025NR1

Mfr.#: AFIC31025NR1

OMO.#: OMO-AFIC31025NR1-NXP-SEMICONDUCTORS

AIRFAST RF POWER LDMOS TRANSISTO
AFIC31025GNR1

Mfr.#: AFIC31025GNR1

OMO.#: OMO-AFIC31025GNR1-NXP-SEMICONDUCTORS

AIRFAST RF POWER LDMOS TRANSISTO
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de AFIC31025GNR1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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