SI1988DH-T1-E3

SI1988DH-T1-E3
Mfr. #:
SI1988DH-T1-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 78-SI1922EDH-T1-GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI1988DH-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI1988DH-T1-E3 DatasheetSI1988DH-T1-E3 Datasheet (P4-P6)SI1988DH-T1-E3 Datasheet (P7)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-363-6
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1 mm
Longitud:
2.1 mm
Serie:
SI1
Ancho:
1.25 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SI1988DH-E3
Unidad de peso:
0.000265 oz
Tags
SI19, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TransMOSFETNCH20V13A6PinSC70TR
***ark
Transistor;TransistorTypeMOSFET;TransistorPolarityDualNChannel;DrainSourceVoltageVds20V;ContinuousDrainCurrentId1300mA;OnResistanceRdson025ohm;RdsonTestVoltageVgs8V;ThresholdVoltageVgsTyp1V;RoHSCompliantYes
***nell
MOSFETDUALNSC70;TransistorTypeMOSFET;TransistorPolarityDualN;VoltageVdsTyp20V;CurrentIdCont13A;ResistanceRdsOn0168ohm;VoltageVgsRdsonMeasurement45V;VoltageVgsthTyp1V;CaseStyleSOT323SC70;TerminationTypeSMD;BaseNumber1988;CurrentIdmPulse4A;NchannelGateCharge16nC;NoofPins6;PowerDissipation125mW;PowerPd125W;ResistanceRdsonVgs18V025ohm;ResistanceRdsonVgs25V02ohm;ResistanceRdsonVgs45V0168ohm;VoltageRdsMeasurement45V;VoltageVdsMax20V;VoltageVgsthMax1V;VoltageVgsthMin04V
Parte # Mfg. Descripción Valores Precio
SI1988DH-T1-E3
DISTI # SI1988DH-T1-E3TR-ND
Vishay SiliconixMOSFET 2N-CH 20V 1.3A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI1988DH-T1-E3
    DISTI # SI1988DH-T1-E3CT-ND
    Vishay SiliconixMOSFET 2N-CH 20V 1.3A SC70-6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI1988DH-T1-E3
      DISTI # SI1988DH-T1-E3DKR-ND
      Vishay SiliconixMOSFET 2N-CH 20V 1.3A SC70-6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI1988DH-T1-E3
        DISTI # 781-SI1988DH-T1-E3
        Vishay IntertechnologiesMOSFET DUAL N-CH 20V(D-S)
        RoHS: Compliant
        0
          Imagen Parte # Descripción
          SI1988DH-T1-E3

          Mfr.#: SI1988DH-T1-E3

          OMO.#: OMO-SI1988DH-T1-E3

          MOSFET RECOMMENDED ALT 78-SI1922EDH-T1-GE3
          SI1988DH-T1-E3

          Mfr.#: SI1988DH-T1-E3

          OMO.#: OMO-SI1988DH-T1-E3-VISHAY

          IGBT Transistors MOSFET DUAL N-CH 20V(D-S)
          SI1988DH-T1-GE3

          Mfr.#: SI1988DH-T1-GE3

          OMO.#: OMO-SI1988DH-T1-GE3-VISHAY

          MOSFET 2N-CH 20V 1.3A SC-70-6
          Disponibilidad
          Valores:
          Available
          En orden:
          3000
          Ingrese la cantidad:
          El precio actual de SI1988DH-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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