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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| IPP065N04N G DISTI # IPP065N04NG-ND | Infineon Technologies AG | MOSFET N-CH 40V 50A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call | |
| IPP065N04N G DISTI # IPP065N04NG | Infineon Technologies AG | Trans MOSFET N-CH 40V 50A 3-Pin TO-220 Tube - Bulk (Alt: IPP065N04NG) RoHS: Compliant Min Qty: 962 Container: Bulk | Americas - 0 |
|
| IPP065N04N G DISTI # IPP065N04N G | Infineon Technologies AG | Trans MOSFET N-CH 40V 50A 3-Pin TO-220 Tube - Bulk (Alt: IPP065N04N G) RoHS: Compliant Min Qty: 962 Container: Bulk | Americas - 0 | |
| IPP065N04N G DISTI # 726-IPP065N04NG | Infineon Technologies AG | MOSFET N-Ch 40V 50A TO220-3 OptiMOS 3 RoHS: Compliant | 189 |
|
| IPP065N04NG | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 1952 |
|
| IPP065N04N G | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 900 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: IPP065N04N G OMO.#: OMO-IPP065N04N-G |
MOSFET N-Ch 40V 50A TO220-3 OptiMOS 3 |
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Mfr.#: IPP065N04N G,IPP065N04NG |
Nuevo y original |
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Nuevo y original | |
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Mfr.#: IPP065N04N G |
IGBT Transistors MOSFET N-Ch 40V 50A TO220-3 OptiMOS 3 |