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IGW40N65F5FKSA1

IGW40N65F5FKSA1
Mfr. #:
IGW40N65F5FKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors IGBT PRODUCTS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IGW40N65F5FKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IGW40N65F5FKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.6 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
74 A
Pd - Disipación de energía:
250 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
TRENCHSTOP 5 F5
Embalaje:
Tubo
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IGW40N65F5 SP000973424
Unidad de peso:
1.340411 oz
Tags
IGW40N65F, IGW40N65, IGW40N6, IGW40N, IGW40, IGW4, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    C***n
    C***n
    NL

    all right.

    2019-04-05
    K***v
    K***v
    RU

    Great store not the first time i order from this seller

    2019-03-07
***Components
In a Tube of 30, Infineon IGW40N65F5FKSA1 IGBT, 40 A 650 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 650V 74A 250000mW 3-Pin(3+Tab) TO-247 Tube
***p One Stop Global
Trans IGBT Chip N-CH 650V 74A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube
***ure Electronics
650V, 74A IGBT TO247-3 Package
***i-Key
IGBT 650V 74A 255W PG-TO247-3
***ronik
IGBT 650V 40A 1.65V TO247-3
***ark
IGBT, 650V, 40A, TO247-3
***ukat
650V 74A 255W TO247
***ment14 APAC
Prices include import duty and tax. IGBT, 650V, 40A, TO247-3; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:255W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Transistor Type:IGBT
***nell
IGBT, 650V, 40A, TO247-3; Corrente di Collettore CC:40A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:255W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-40°C; Tipo di Transistor:IGBT
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 F5 Discrete IGBTs
Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.
Parte # Mfg. Descripción Valores Precio
IGW40N65F5FKSA1
DISTI # V99:2348_06377719		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 500:$1.8880
  • 250:$2.0960
  • 100:$2.1730
  • 10:$2.5520
  • 1:$3.2956
IGW40N65F5FKSA1
DISTI # V36:1790_06377719		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IGW40N65F5FKSA1
    DISTI # IGW40N65F5FKSA1-ND    		Infineon Technologies AGIGBT 650V 74A 255W PG-TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		230In Stock
    • 2640:$1.9424
    • 720:$2.4182
    • 240:$2.8407
    • 25:$3.2776
    • 10:$3.4670
    • 1:$3.8600
    IGW40N65F5FKSA1
    DISTI # 32372445    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		240
    • 500:$1.8880
    • 250:$2.0960
    • 100:$2.1730
    • 10:$2.5520
    • 4:$2.9960
    IGW40N65F5FKSA1
    DISTI # IGW40N65F5FKSA1    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube - Bulk (Alt: IGW40N65F5FKSA1)
    RoHS: Compliant
    Min Qty: 209
    Container: Bulk    		Americas - 0
    • 1045:$1.4900
    • 2090:$1.4900
    • 418:$1.5900
    • 627:$1.5900
    • 209:$1.6900
    IGW40N65F5FKSA1
    DISTI # IGW40N65F5FKSA1    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW40N65F5FKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 1440:$1.6900
    • 2400:$1.6900
    • 960:$1.7900
    • 240:$1.8900
    • 480:$1.8900
    IGW40N65F5FKSA1
    DISTI # SP000973424    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube (Alt: SP000973424)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1000:€1.3900
    • 500:€1.4900
    • 50:€1.5900
    • 100:€1.5900
    • 25:€1.6900
    • 10:€1.7900
    • 1:€1.8900
    IGW40N65F5FKSA1
    DISTI # 33X0399    		Infineon Technologies AGIGBT Single Transistor, 40 A, 1.6 V, 255 W, 650 V, TO-247, 3 RoHS Compliant: Yes0
    • 500:$1.9100
    • 250:$2.1200
    • 100:$2.2400
    • 50:$2.3600
    • 25:$2.4700
    • 10:$2.5900
    • 1:$3.0400
    IGW40N65F5FKSA1
    DISTI # 726-IGW40N65F5FKSA1    		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
    RoHS: Compliant    		461
    • 1:$3.6700
    • 10:$3.1200
    • 100:$2.7000
    • 250:$2.5600
    • 500:$2.3000
    • 1000:$1.9900
    IGW40N65F5
    DISTI # 726-IGW40N65F5-ES    		Infineon Technologies AGIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
    RoHS: Compliant    		234
    • 1:$3.0100
    • 10:$2.5600
    • 100:$2.2200
    • 250:$2.1000
    • 500:$1.8900
    IGW40N65F5FKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel
    RoHS: Compliant    		25
    • 1000:$1.5800
    • 500:$1.6600
    • 100:$1.7300
    • 25:$1.8100
    • 1:$1.9400
    IGW40N65F5FKSA1
    DISTI # 1107425P    		Infineon Technologies AGIGBT TRENCHSTOP N-CHANNEL 650V 40A TO247, TU356
    • 200:£1.6680
    • 80:£1.7300
    • 40:£1.8700
    • 12:£2.0980
    IGW40N65F5FKSA1
    DISTI # IGW40N65F5FKSA1    		Infineon Technologies AGTransistor: IGBT,650V,74A,250W,TO247-3,Series: F516
    • 1:$3.5300
    • 3:$3.0600
    • 10:$2.4500
    • 30:$2.2000
    IGW40N65F5FKSA1
    DISTI # 2363277    		Infineon Technologies AGIGBT, 650V, 40A, TO247-3467
    • 500:£1.3800
    • 250:£1.5400
    • 100:£1.6200
    • 10:£1.8800
    • 1:£2.6200
    IGW40N65F5FKSA1
    DISTI # IGW40N65F5    		Infineon Technologies AG650V 74A 255W TO247
    RoHS: Compliant    		485
    • 1:€5.4700
    • 10:€2.4700
    • 50:€1.4700
    • 100:€1.4100
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    Disponibilidad
    Valores:
    461
    En orden:
    2444
    Ingrese la cantidad:
    El precio actual de IGW40N65F5FKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,67 US$
    3,67 US$
    10
    3,12 US$
    31,20 US$
    100
    2,70 US$
    270,00 US$
    250
    2,56 US$
    640,00 US$
    500
    2,30 US$
    1 150,00 US$
    1000
    1,99 US$
    1 990,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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