IPP020N06NAKSA1

IPP020N06NAKSA1
Mfr. #:
IPP020N06NAKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 60V 120A TO220-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPP020N06NAKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPP020N06NAKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
120 A
Rds On - Resistencia de la fuente de drenaje:
1.8 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
124 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
214 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Producto:
OptiMOS Power
Serie:
OptiMOS 5
Tipo de transistor:
1 N-Channel
Escribe:
OptiMOS 3 Power-Transistor
Ancho:
4.4 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
100 S
Otoño:
19 ns
Tipo de producto:
MOSFET
Hora de levantarse:
45 ns
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
51 ns
Tiempo típico de retardo de encendido:
24 ns
Parte # Alias:
IPP020N06N IPP2N6NXK SP000917406
Unidad de peso:
0.211644 oz
Tags
IPP020, IPP02, IPP0, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
***ical
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(3+Tab) TO-220 Tube
***ure Electronics
Single N-Channel 60 V 2 mOhm 106 nC OptiMOS™ Power Mosfet - TO-220-3
***nell
MOSFET, N CH, 60V, 120A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V;
*** Stop Electro
Power Field-Effect Transistor, 29A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO220-3, RoHS
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***ure Electronics
Single N-Channel 60 V 3.2 mOhm 165 nC OptiMOS™ Power Mosfet - TO-220-3
***p One Stop
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO220-3, RoHS
***nell
MOSFET, N-CH, 60V, 120A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 120 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 3.2 / Gate-Source Voltage V = 20 / Fall Time ns = 20 / Rise Time ns = 120 / Turn-OFF Delay Time ns = 62 / Turn-ON Delay Time ns = 35 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 188
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***i-Key
MOSFET N-CH 60V 120A TO220
*** Electronic Components
MOSFET PT3 Low Qg 60V, 4.0Mohm
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***ure Electronics
Single N-Channel 60 V 4 mOhm 98 nC OptiMOS™ Power Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 60V 90A 3-Pin TO-220 Tube - Rail/Tube
***el Electronic
INFINEON - IPP040N06N3GXKSA1 - MOSFET, N CH, 90A, 60V, PG-TO220-3
*** Stop Electro
Power Field-Effect Transistor, 90A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO220-3, RoHS
***ment14 APAC
MOSFET, N CH, 90A, 60V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:188W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:188W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 130 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 4 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 70 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 188
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***ure Electronics
Single N-Channel 60 V 2.9 mOhm 56 nC OptiMOS™ Power Mosfet - TO-220-3
***nell
MOSFET, N CH, 60V, 100A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V;
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), 60V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO220-3, RoHS
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***icroelectronics
N-channel 55 V, 4.5 mOhm typ., 110 A STripFET F6 Power MOSFET in a TO-220 package
***ure Electronics
Single N-Channel 55 V 150 W 126 nC Silicon Through Hole Mosfet - TO-220-3
***r Electronics
Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***et
Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
***ark
Mosfet Transistor, N Channel, 120 A, 60 V, 0.0024 Ohm, 10 V, 2 V Rohs Compliant: Yes
***ure Electronics
STP260N6F6 Series 60 V 3 mOhm N-Channel STripFET™ VI DeepGATE™ Mosfet - TO-220
***ical
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220AB Tube
***nell
MOSFET, N CH, 60V, 120A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0024ohm; Available until stocks are exhausted Alternative available
***r Electronics
Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
Parte # Mfg. Descripción Valores Precio
IPP020N06NAKSA1
DISTI # V99:2348_06378622
Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
450
  • 2500:$2.0610
  • 1000:$2.0880
  • 500:$2.3760
  • 250:$2.7510
  • 100:$2.8420
  • 10:$3.3430
  • 1:$4.3274
IPP020N06NAKSA1
DISTI # V36:1790_06378622
Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
0
  • 500000:$1.7430
  • 250000:$1.7450
  • 50000:$1.9850
  • 5000:$2.4090
  • 500:$2.4800
IPP020N06NAKSA1
DISTI # IPP020N06NAKSA1-ND
Infineon Technologies AGMOSFET N-CH 60V 29A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
920In Stock
  • 2500:$2.0892
  • 500:$2.6075
  • 100:$3.0631
  • 25:$3.5344
  • 10:$3.7390
  • 1:$4.1600
IPP020N06NAKSA1
DISTI # 32882223
Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
450
  • 3:$4.3274
IPP020N06NAKSA1
DISTI # IPP020N06NAKSA1
Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-220 Tube - Bulk (Alt: IPP020N06NAKSA1)
RoHS: Compliant
Min Qty: 187
Container: Bulk
Americas - 0
  • 561:$1.6900
  • 935:$1.6900
  • 1870:$1.6900
  • 374:$1.7900
  • 187:$1.8900
IPP020N06NAKSA1
DISTI # IPP020N06NAKSA1
Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP020N06NAKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 5000:$1.9009
  • 3000:$1.9353
  • 2000:$2.0027
  • 1000:$2.0778
  • 500:$2.1556
IPP020N06NAKSA1
DISTI # 85X6036
Infineon Technologies AGMOSFET Transistor, N Channel, 120 A, 60 V, 0.0018 ohm, 10 V, 2.8 V RoHS Compliant: Yes0
    IPP020N06N
    DISTI # 726-IPP020N06N
    Infineon Technologies AGMOSFET N-Ch 60V 120A TO220-3
    RoHS: Compliant
    698
    • 1:$3.9600
    • 10:$3.3600
    • 100:$2.9100
    • 250:$2.7600
    • 500:$2.4800
    • 1000:$2.0900
    • 2500:$1.9900
    IPP020N06NAKSA1
    DISTI # 726-IPP020N06NAKSA1
    Infineon Technologies AGMOSFET N-Ch 60V 120A TO220-3
    RoHS: Compliant
    438
    • 1:$3.9600
    • 10:$3.3600
    • 100:$2.9100
    • 250:$2.7600
    • 500:$2.4800
    • 1000:$2.0900
    • 2500:$1.9900
    IPP020N06NAKSA1Infineon Technologies AGSingle N-Channel 60 V 2 mOhm 106 nC OptiMOS Power Mosfet - TO-220-3
    RoHS: Not Compliant
    200Tube
    • 5:$3.4900
    • 25:$2.4300
    • 50:$2.2400
    • 100:$2.0700
    • 250:$1.8700
    IPP020N06NAKSA1Infineon Technologies AGPower Field-Effect Transistor, 29A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant
    33
    • 1000:$1.7600
    • 500:$1.8600
    • 100:$1.9300
    • 25:$2.0200
    • 1:$2.1700
    IPP020N06NAKSA1
    DISTI # 9062919P
    Infineon Technologies AGMOSFET N-CHANNEL 60V 120A OPTIMOS TO220, TU60
    • 250:£1.8840
    • 100:£1.9900
    • 50:£2.1440
    • 10:£2.3000
    IPP020N06NAKSA1
    DISTI # 9062919
    Infineon Technologies AGMOSFET N-CHANNEL 60V 120A OPTIMOS TO220, PK65
    • 250:£1.8840
    • 100:£1.9900
    • 50:£2.1440
    • 10:£2.3000
    • 5:£2.8920
    IPP020N06NAKSA1
    DISTI # XSFP00000115130
    Infineon Technologies AG 
    RoHS: Compliant
    108 in Stock0 on Order
    • 108:$3.2400
    • 42:$3.4700
    IPP020N06NAKSA1
    DISTI # 2443402
    Infineon Technologies AGMOSFET, N CH, 60V, 120A, TO-220-3
    RoHS: Compliant
    0
    • 2500:$3.0000
    • 1000:$3.1500
    • 500:$3.7400
    • 250:$4.1600
    • 100:$4.3900
    • 10:$5.0600
    • 1:$5.9700
    Imagen Parte # Descripción
    MCP1402T-E/OT

    Mfr.#: MCP1402T-E/OT

    OMO.#: OMO-MCP1402T-E-OT

    Gate Drivers 0.5A Sngl MOSFET Drvr
    IR2117PBF

    Mfr.#: IR2117PBF

    OMO.#: OMO-IR2117PBF

    Gate Drivers 1 HI SIDE DRVR NONINVERTING INPUT
    BD681G

    Mfr.#: BD681G

    OMO.#: OMO-BD681G

    Darlington Transistors 4A 100V Bipolar Power NPN
    BYW84-TAP

    Mfr.#: BYW84-TAP

    OMO.#: OMO-BYW84-TAP

    Rectifiers 3.0 Amp 600 Volt 100 Amp IFSM
    IRFB3004PBF

    Mfr.#: IRFB3004PBF

    OMO.#: OMO-IRFB3004PBF

    MOSFET MOSFT 40V 195A 1.7mOhm 160nC Qg
    IPP020N08N5AKSA1

    Mfr.#: IPP020N08N5AKSA1

    OMO.#: OMO-IPP020N08N5AKSA1

    MOSFET N-Ch 80V 120A TO220-3
    MBRF20200CTR

    Mfr.#: MBRF20200CTR

    OMO.#: OMO-MBRF20200CTR

    Schottky Diodes & Rectifiers 2x 10A 200V Rectifier
    MBRF20200CT

    Mfr.#: MBRF20200CT

    OMO.#: OMO-MBRF20200CT

    Schottky Diodes & Rectifiers 2x 10A 200V Rectifier
    STPS40M120CT

    Mfr.#: STPS40M120CT

    OMO.#: OMO-STPS40M120CT

    Schottky Diodes & Rectifiers 40A IF 120V VRRM 0.44V VF Schottky
    TMP275AIDR

    Mfr.#: TMP275AIDR

    OMO.#: OMO-TMP275AIDR

    Board Mount Temperature Sensors 0.5C Dig Out Temp Sensor
    Disponibilidad
    Valores:
    438
    En orden:
    2421
    Ingrese la cantidad:
    El precio actual de IPP020N06NAKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,96 US$
    3,96 US$
    10
    3,36 US$
    33,60 US$
    100
    2,91 US$
    291,00 US$
    250
    2,76 US$
    690,00 US$
    500
    2,48 US$
    1 240,00 US$
    1000
    2,09 US$
    2 090,00 US$
    2500
    1,99 US$
    4 975,00 US$
    5000
    1,91 US$
    9 550,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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