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IXDH30N120

IXDH30N120
Mfr. #:
IXDH30N120
Fabricante:
Littelfuse
Descripción:
IGBT Transistors 30 Amps 1200V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXDH30N120 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXDH30N120 DatasheetIXDH30N120 Datasheet (P4)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1.2 kV
Voltaje de saturación colector-emisor:
2.4 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
60 A
Pd - Disipación de energía:
300 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
IXDH30N120
Embalaje:
Tubo
Corriente continua de colector Ic Max:
76 A
Altura:
21.46 mm
Longitud:
16.26 mm
Rango de temperatura de funcionamiento:
- 55 C to + 150 C
Ancho:
5.3 mm
Marca:
IXYS
Corriente continua del colector:
60 A
Corriente de fuga puerta-emisor:
500 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
30
Subcategoría:
IGBT
Unidad de peso:
0.229281 oz
Tags
IXDH30, IXDH3, IXDH, IXD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
NPT 1200 V 60 A 300 W Flange Mount High Voltage IGBT - TO-247AD
***i-Key
IGBT 1200V 60A 300W TO247AD
***el Nordic
Contact for details
***p One Stop Global
Trans IGBT Chip N-CH 1200V 60A 300000mW 3-Pin(3+Tab) TO-247AD Tube
***ure Electronics
IRGP30B120KD-EP Series 1200 V 30 A N-Channel Motor Control Co-Pack IGBT TO-247AD
***nell
IGBT, W/DIODE, 1200V, 60A, TO247AD; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.2kV; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: IRGP Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 60A; Fall Time Max: 75ns; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 300W; Pulsed Current Icm: 120A; Rise Time: 25ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 1.2kV
***ical
Trans IGBT Chip N-CH 1200V 58A 250000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT,1200V,58A,TO-247; DC Collector Current: 58A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No. of Pins: 3Pins;
***ark
Igbt, 1200V, 58A, To-247; Continuous Collector Current:58A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:250W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- Rohs Compliant: Yes
***p One Stop Global
Trans IGBT Chip N-CH 1.2KV 70A 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
IGBT 70A 1.2KV Ultrafast Diode TO-247AC
*** Electronic Components
IGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***ical
Trans IGBT Chip N=-CH 1200V 54A 390000mW 3-Pin(3+Tab) TO-247 Rail
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:54A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:390W; Package/Case:TO-247 ;RoHS Compliant: Yes
***rchild Semiconductor
HGTG18N120BN is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
***ical
Trans IGBT Chip N-CH 1.2KV 45A 3-Pin(3+Tab) TO-247AC Tube
*** Electronic Components
IGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel
***el Electronic
Feed Through Capacitors Tape & Reel (TR) 10 Weeks CAP FEEDTHRU
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***ical
Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail
***r Electronics
Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247
***Yang
PWR IGBT 35A 1200V NPT N-CHANNEL TO-247 - Bulk
***rchild Semiconductor
The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Parte # Mfg. Descripción Valores Precio
IXDH30N120
DISTI # IXDH30N120-ND		IXYS CorporationIGBT 1200V 60A 300W TO247AD
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$9.1697
IXDH30N120D1
DISTI # IXDH30N120D1-ND		IXYS CorporationIGBT 1200V 60A 300W TO247AD
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$10.6550
IXDH30N120
DISTI # 747-IXDH30N120		IXYS CorporationIGBT Transistors 30 Amps 1200V
RoHS: Compliant		10
  • 1:$11.1800
  • 10:$10.0600
  • 25:$9.1700
  • 50:$8.3800
  • 100:$8.2800
  • 250:$7.5400
  • 500:$6.9300
  • 1000:$6.0400
IXDH30N120D1
DISTI # 747-IXDH30N120D1		IXYS CorporationIGBT Transistors 30 Amps 1200V
RoHS: Compliant		89
  • 1:$12.9900
  • 10:$11.6900
  • 25:$10.6600
  • 50:$9.7400
  • 100:$9.6200
  • 250:$8.7600
  • 500:$8.0600
  • 1000:$7.0200
IXDH 30N120IXYS Corporation 10
    IXDH30N120D1IXYS Corporation 10
      IXDH30N120D1
      DISTI # IXDH30N120D1      		IXYS CorporationTransistor: IGBT,1.2kV,38A,300W,TO247AD59
      • 1:$12.2500
      • 3:$11.3500
      • 10:$9.2400
      • 25:$8.4300
      • 100:$7.5600
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      Disponibilidad
      Valores:
      Available
      En orden:
      1993
      Ingrese la cantidad:
      El precio actual de IXDH30N120 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      11,18 US$
      11,18 US$
      10
      10,06 US$
      100,60 US$
      25
      9,17 US$
      229,25 US$
      50
      8,38 US$
      419,00 US$
      100
      8,28 US$
      828,00 US$
      250
      7,54 US$
      1 885,00 US$
      500
      6,93 US$
      3 465,00 US$
      1000
      6,04 US$
      6 040,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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