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SIA813DJ-T1-GE3

SIA813DJ-T1-GE3
Mfr. #:
SIA813DJ-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 20V 4.5A 6.5W 94mohm @ 4.5V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIA813DJ-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA813DJ-T1-GE3 DatasheetSIA813DJ-T1-GE3 Datasheet (P4-P6)SIA813DJ-T1-GE3 Datasheet (P7-P9)SIA813DJ-T1-GE3 Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SIA
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SIA813DJ-GE3
Unidad de peso:
0.000988 oz
Tags
SIA81, SIA8, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 20V 3.6A 6-Pin PowerPAK SC-70 T/R
***i-Key
MOSFET P-CH 20V 4.5A SC70-6
***ment14 APAC
P CHANNEL MOSFET, -20V, 4.5A, SC-70; Transistor Polarity:P Channel + Schottky Diode; Continuous Drain Current Id:-4.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):460mohm; Rds(on) Test Voltage Vgs:8V
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-4500mA; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):0.46ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:1.9W ;RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
SIA813DJ-T1-GE3
DISTI # SIA813DJ-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 20V 4.5A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.3350
SIA813DJ-T1-GE3
DISTI # SIA813DJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.6A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA813DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3049
  • 6000:$0.2959
  • 12000:$0.2839
  • 18000:$0.2759
  • 30000:$0.2689
SIA813DJ-T1-GE3
DISTI # 781-SIA813DJ-T1-GE3		Vishay IntertechnologiesMOSFET 20V 4.5A 6.5W 94mohm @ 4.5V
RoHS: Compliant		0
  • 3000:$0.3050
  • 6000:$0.2840
  • 9000:$0.2740
  • 24000:$0.2630
Imagen Parte # Descripción
SIA813DJ-T1-GE3

Mfr.#: SIA813DJ-T1-GE3

OMO.#: OMO-SIA813DJ-T1-GE3

 MOSFET 20V 4.5A 6.5W 94mohm @ 4.5V
SIA813DJ-T1-GE3

Mfr.#: SIA813DJ-T1-GE3

OMO.#: OMO-SIA813DJ-T1-GE3-VISHAY

 RF Bipolar Transistors MOSFET 20V 4.5A 6.5W 94mohm @ 4.5V
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de SIA813DJ-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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