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IPB60R180P7ATMA1

IPB60R180P7ATMA1
Mfr. #:
IPB60R180P7ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET TO263-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB60R180P7ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPB60R180P7ATMA1 más información
Atributo del producto
Valor de atributo
Fabricante
categoria de producto
Chips de IC
Serie
-
embalaje
A granel
Estado de la pieza
Activo
Estilo de conector
D-Sub
tipo de conector
Receptáculo, enchufes hembra
Numero de posiciones
15
Número de filas
2
Tamaño de la carcasa, disposición del conector
2 (DA, A)
Tipo de Contacto
Señal
Tipo de montaje
Montaje en panel, orificio pasante
Característica de la brida
Vivienda / Shell (sin rosca)
Terminación
Cable enrrollado
Características
-
Material de la carcasa, acabado
Acero
Contacto acabado
-
Espesor del acabado de contacto
-
Protección de ingreso
-
Clasificación de inflamabilidad del material
UL94 V-0
Valoración actual
-
Temperatura de funcionamiento
-55°C ~ 125°C
Voltaje
-
Color
-
Formulario de contacto
-
Material de la carcasa
Tereftalato de polibutileno (PBT), poliéster, relleno de vidrio
Calibre del cable
-
Material de contacto
Aleación de cobre
Espaciado de backset
-
Tags
IPB60R18, IPB60R1, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 180 mOhm CoolMOS™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 18A
***ronik
CoolMOS 600V 18A 180mOhm TO263
***i-Key
MOSFET TO263-3
***et Europe
HIGH POWER_NEW
***ark
Mosfet, N-Ch, 600V, 18A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.145Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 18A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:72W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N-CH, 600V, 18A, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:18A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.145ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:72W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Parte # Mfg. Descripción Valores Precio
IPB60R180P7ATMA1
DISTI # V72:2272_18787578		Infineon Technologies AGHIGH POWER_NEW2000
  • 1000:$1.3173
  • 500:$1.4452
  • 250:$1.6087
  • 100:$1.8899
  • 25:$2.1059
  • 10:$2.3399
  • 1:$3.4378
IPB60R180P7ATMA1
DISTI # V36:1790_18787578		Infineon Technologies AGHIGH POWER_NEW0
    IPB60R180P7ATMA1
    DISTI # IPB60R180P7ATMA1TR-ND    		Infineon Technologies AGMOSFET TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		1000In Stock
    • 5000:$1.1403
    • 2000:$1.1546
    • 1000:$1.2401
    IPB60R180P7ATMA1
    DISTI # IPB60R180P7ATMA1CT-ND    		Infineon Technologies AGMOSFET TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		1000In Stock
    • 500:$1.5416
    • 100:$1.8763
    • 10:$2.3340
    • 1:$2.6000
    IPB60R180P7ATMA1
    DISTI # IPB60R180P7ATMA1DKR-ND    		Infineon Technologies AGMOSFET TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		1000In Stock
    • 500:$1.5416
    • 100:$1.8763
    • 10:$2.3340
    • 1:$2.6000
    IPB60R180P7ATMA1
    DISTI # 33647293    		Infineon Technologies AGHIGH POWER_NEW2000
    • 1000:$1.3173
    • 500:$1.4452
    • 250:$1.6087
    • 100:$1.8899
    • 25:$2.1059
    • 10:$2.3399
    • 7:$3.4378
    IPB60R180P7ATMA1
    DISTI # 33655373    		Infineon Technologies AGHIGH POWER_NEW1000
    • 1000:$1.2217
    IPB60R180P7ATMA1
    DISTI # IPB60R180P7ATMA1    		Infineon Technologies AGHIGH POWER_NEW - Tape and Reel (Alt: IPB60R180P7ATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 10000:$1.0339
    • 6000:$1.0529
    • 4000:$1.0899
    • 2000:$1.1309
    • 1000:$1.1729
    IPB60R180P7ATMA1
    DISTI # 49AC7997    		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.145ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes0
    • 500:$1.4300
    • 250:$1.5400
    • 100:$1.6400
    • 50:$1.7700
    • 25:$1.9100
    • 10:$2.0500
    • 1:$2.4100
    IPB60R180P7ATMA1
    DISTI # 726-IPB60R180P7ATMA1    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		10000
    • 1:$2.3900
    • 10:$2.0300
    • 100:$1.6200
    • 500:$1.4200
    • 1000:$1.1800
    IPB60R180P7ATMA1
    DISTI # 2841645    		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, TO-2630
    • 500:£1.1000
    • 250:£1.1800
    • 100:£1.2600
    • 10:£1.5900
    • 1:£2.1100
    IPB60R180P7ATMA1
    DISTI # 2841645    		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, TO-263
    RoHS: Compliant    		0
    • 1000:$1.6300
    • 500:$1.6700
    • 250:$1.7600
    • 100:$1.8600
    • 10:$2.1000
    • 1:$2.2500
    Imagen Parte # Descripción
    IPB60R180P7ATMA1

    Mfr.#: IPB60R180P7ATMA1

    OMO.#: OMO-IPB60R180P7ATMA1

    		 MOSFET HIGH POWER_NEW
    IPB60R180C7ATMA1

    Mfr.#: IPB60R180C7ATMA1

    OMO.#: OMO-IPB60R180C7ATMA1

    		 MOSFET HIGH POWER_NEW
    IPB60R180C7ATMA1

    Mfr.#: IPB60R180C7ATMA1

    OMO.#: OMO-IPB60R180C7ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V 13A TO263-3
    IPB60R180P7ATMA1

    Mfr.#: IPB60R180P7ATMA1

    OMO.#: OMO-IPB60R180P7ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET TO263-3
    IPB60R180P7ATMA1-CUT TAPE

    Mfr.#: IPB60R180P7ATMA1-CUT TAPE

    OMO.#: OMO-IPB60R180P7ATMA1-CUT-TAPE-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de IPB60R180P7ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,55 US$
    1,55 US$
    10
    1,47 US$
    14,73 US$
    100
    1,40 US$
    139,58 US$
    500
    1,32 US$
    659,10 US$
    1000
    1,24 US$
    1 240,70 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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