SIHF540S-GE3

SIHF540S-GE3
Mfr. #:
SIHF540S-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 100V Vds 20V Vgs D2PAK (TO-263)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHF540S-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
28 A
Rds On - Resistencia de la fuente de drenaje:
77 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
72 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
150 W
Configuración:
Único
Modo de canal:
Mejora
Altura:
4.83 mm
Longitud:
10.67 mm
Serie:
SIHF
Tipo de transistor:
1 N-Channel
Ancho:
9.65 mm
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
8.7 S
Otoño:
43 ns
Tipo de producto:
MOSFET
Hora de levantarse:
44 ns
Cantidad de paquete de fábrica:
1
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
53 ns
Tiempo típico de retardo de encendido:
11 ns
Tags
SIHF54, SIHF5, SIHF, SIH
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We provide 90-360 days warranty.

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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK
***ark
Mosfet N-Channel 100V
*** Europe
N-CH SINGLE 100V TO263
Parte # Mfg. Descripción Valores Precio
SIHF540S-GE3
DISTI # V36:1790_09219023
Vishay IntertechnologiesTrans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK
RoHS: Compliant
0
  • 1000000:$0.6627
  • 500000:$0.6659
  • 100000:$0.9900
  • 10000:$1.5890
  • 1000:$1.6900
SIHF540S-GE3
DISTI # SIHF540S-GE3
Vishay IntertechnologiesTRANS MOSFET N-CH 100V 28A 3-PIN(2+TAB) D2PAK - Rail/Tube (Alt: SIHF540S-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 10000:$0.6229
  • 6000:$0.6399
  • 4000:$0.6579
  • 2000:$0.6859
  • 1000:$0.7069
SIHF540S-GE3
DISTI # 78-SIHF540S-GE3
Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs D2PAK (TO-263)
RoHS: Compliant
1000
  • 1:$1.6900
  • 10:$1.3900
  • 100:$1.0700
  • 500:$0.9230
  • 1000:$0.7280
  • 2500:$0.6800
  • 5000:$0.6460
  • 10000:$0.6220
SIHF540SGE3Vishay SiliconixPower Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
700
    Imagen Parte # Descripción
    SIHF540S-GE3

    Mfr.#: SIHF540S-GE3

    OMO.#: OMO-SIHF540S-GE3

    MOSFET 100V Vds 20V Vgs D2PAK (TO-263)
    SIHF540STRL-GE3

    Mfr.#: SIHF540STRL-GE3

    OMO.#: OMO-SIHF540STRL-GE3

    MOSFET 100V Vds 20V Vgs D2PAK (TO-263)
    SIHF540S-GE3

    Mfr.#: SIHF540S-GE3

    OMO.#: OMO-SIHF540S-GE3-1190

    Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK
    SIHF540SGE3

    Mfr.#: SIHF540SGE3

    OMO.#: OMO-SIHF540SGE3-1190

    Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    SIHF540STRL-GE3

    Mfr.#: SIHF540STRL-GE3

    OMO.#: OMO-SIHF540STRL-GE3-1190

    Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK T/R
    Disponibilidad
    Valores:
    996
    En orden:
    2979
    Ingrese la cantidad:
    El precio actual de SIHF540S-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,69 US$
    1,69 US$
    10
    1,39 US$
    13,90 US$
    100
    1,07 US$
    107,00 US$
    500
    0,92 US$
    461,50 US$
    1000
    0,73 US$
    728,00 US$
    2500
    0,68 US$
    1 700,00 US$
    5000
    0,65 US$
    3 230,00 US$
    10000
    0,62 US$
    6 220,00 US$
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