SI2342DS-T1-GE3

Mfr. #:: SI2342DS-T1-GE3
Fabricante:: Vishay
Descripción:: MOSFET N-CH 8V 6A SOT-23
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI2342DS-T1-GE3 Ficha de datos
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Más información:: SI2342DS-T1-GE3 más información

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Tags: SI2342DS-T, SI2342, SI234, SI23, SI2

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2342DS-T1-GE3 Descripción

***ure Electronics: N-Channel 8 V 0.017 Ohm 2.5 W Surface Mount Power Mosfet - SOT-23-3

***p One Stop Global: Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R

***C: Trans MOSFET N-CH 8V 6A 3-Pin SOT-23

***i-Key: MOSFET N-CH 8V 6A SOT-23

***ronik: N-CH 8V 6A 17mOhm@4,5V SOT23

***: N-CH 8V MOSFET

***ark: Mosfet, N-Ch, 8V, 6A, Sot-23; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:8V; On Resistance Rds(On):0.014Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800Mv; No. Of Pins:3Pins Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 8V, 6A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:8V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power Dissipation Pd:2.5W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2016)

***nell: MOSFET, CA-N, 8V, 6A, SOT-23; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:8V; Resistenza di Attivazione Rds(on):0.014ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:800mV; Dissipazione di Potenza Pd:2.5W; Modello Case Transistor:SOT-23; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (20-Jun-2016)

SI2342DS-T1-GE3 Más información

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI2342DS-T1-GE3 DISTI # V72:2272_07432721	Vishay Intertechnologies	Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R RoHS: Compliant	938	500:$0.2010 250:$0.2526 100:$0.2747 25:$0.3212 10:$0.3568 1:$0.4330
SI2342DS-T1-GE3 DISTI # V36:1790_07432721	Vishay Intertechnologies	Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000000:$0.1500 1500000:$0.1501 300000:$0.1577 30000:$0.1687 3000:$0.1705
SI2342DS-T1-GE3 DISTI # SI2342DS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 8V 6A SOT-23 Min Qty: 1 Container: Cut Tape (CT)	42111In Stock	1000:$0.1926 500:$0.2493 100:$0.3172 10:$0.4250 1:$0.5000
SI2342DS-T1-GE3 DISTI # SI2342DS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 8V 6A SOT-23 Min Qty: 1 Container: Digi-Reel®	42111In Stock	1000:$0.1926 500:$0.2493 100:$0.3172 10:$0.4250 1:$0.5000
SI2342DS-T1-GE3 DISTI # SI2342DS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 8V 6A SOT-23 Min Qty: 3000 Container: Tape & Reel (TR)	42000In Stock	30000:$0.1463 15000:$0.1485 6000:$0.1595 3000:$0.1705
SI2342DS-T1-GE3 DISTI # 30603404	Vishay Intertechnologies	Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R RoHS: Compliant	1604	1000:$0.2346 500:$0.3073 100:$0.3124 53:$0.3417
SI2342DS-T1-GE3 DISTI # 34470944	Vishay Intertechnologies	Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R RoHS: Compliant	938	500:$0.2010 250:$0.2526 100:$0.2747 41:$0.3212
SI2342DS-T1-GE3 DISTI # SI2342DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2342DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 3000	30000:$0.1496 18000:$0.1535 12000:$0.1577 6000:$0.1620 3000:$0.1667
SI2342DS-T1-GE3 DISTI # SI2342DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R (Alt: SI2342DS-T1-GE3) Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1514 18000:€0.2112 12000:€0.2640 6000:€0.3168 3000:€0.3520
SI2342DS-T1-GE3 DISTI # 70AC6495	Vishay Intertechnologies	Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 70AC6495) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.1870 500:$0.2420 100:$0.2680 50:$0.2940 25:$0.3460 10:$0.3970 1:$0.5200
SI2342DS-T1-GE3 DISTI # 38AH2358	Vishay Intertechnologies	N-CHANNEL 8-V (D-S) MOSFET RoHS: Not Compliant	0	30000:$0.1410 18000:$0.1440 12000:$0.1490 6000:$0.1550 1:$0.1600
SI2342DS-T1-GE3 DISTI # 70AC6495	Vishay Intertechnologies	MOSFET, N-CH, 8V, 6A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.014ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:800mV,No. of Pins:3Pins RoHS Compliant: Yes RoHS: Compliant	2625	1000:$0.1700 250:$0.1840 500:$0.1840 1:$0.2000 25:$0.2000 50:$0.2000 100:$0.2000
SI2342DS-T1-GE3 DISTI # 78-SI2342DS-T1-GE3	Vishay Intertechnologies	MOSFET 8V Vds 5V Vgs SOT-23 RoHS: Compliant	16148	1:$0.5000 10:$0.3970 100:$0.2940 500:$0.2440 1000:$0.1870 3000:$0.1700 6000:$0.1590 9000:$0.1480 24000:$0.1460
SI2342DS-T1-GE3 DISTI # TMOS1427	Vishay Intertechnologies	N-CH 8V 6A 17mOhm@4,5V SOT23 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$0.2550 6000:$0.2405 9000:$0.2259 12000:$0.2040 15000:$0.1968
SI2342DS-T1-GE3 DISTI # 2646367	Vishay Intertechnologies	MOSFET, N-CH, 8V, 6A, SOT-23 RoHS: Compliant	6199	1000:$0.3030 500:$0.3920 100:$0.4990 10:$0.6670 1:$0.7800
SI2342DS-T1-GE3 DISTI # 2679677	Vishay Intertechnologies	MOSFET, N-CH, 8V, 6A, SOT-23 RoHS: Compliant	0	3000:$0.2680
SI2342DS-T1-GE3 DISTI # 2679677	Vishay Intertechnologies	MOSFET, N-CH, 8V, 6A, SOT-23 RoHS: Compliant	0	9000:£0.1470 3000:£0.1490
SI2342DS-T1-GE3 DISTI # 2646367	Vishay Intertechnologies	MOSFET, N-CH, 8V, 6A, SOT-23 RoHS: Compliant	8999	1500:£0.1500 500:£0.1520 100:£0.2410 50:£0.3240 5:£0.3680
SI2342DS-T1-GE3 DISTI # 2646367RL	Vishay Intertechnologies	MOSFET, N-CH, 8V, 6A, SOT-23 RoHS: Compliant	0	1500:£0.1500 500:£0.1520 100:£0.2410 50:£0.3240 5:£0.3680

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: SI2342DS-T1-GE3 OMO.#: OMO-SI2342DS-T1-GE3	MOSFET 8V Vds 5V Vgs SOT-23
	Mfr.#: SI2342DS OMO.#: OMO-SI2342DS-1190	Nuevo y original
	Mfr.#: SI2342DS-T1-E3 OMO.#: OMO-SI2342DS-T1-E3-1190	Nuevo y original
	Mfr.#: SI2342DS-T1-GE3 OMO.#: OMO-SI2342DS-T1-GE3-VISHAY	MOSFET N-CH 8V 6A SOT-23
	Mfr.#: SI2342DS-T1-GE3 , MAX630 OMO.#: OMO-SI2342DS-T1-GE3-MAX630-1190	Nuevo y original

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El precio actual de SI2342DS-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,22 US$~~; ~~0,22 US$~~

10: ~~0,21 US$~~; ~~2,11 US$~~

100: ~~0,20 US$~~; ~~19,96 US$~~

500: ~~0,19 US$~~; ~~94,25 US$~~

1000: ~~0,18 US$~~; ~~177,40 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

SI2342DS-T 3
SI2342 4
SI234 27
SI23 561
SI2 1125

SI2342DS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes