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IRFB4710PBF

IRFB4710PBF
Mfr. #:
IRFB4710PBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFT 100V 75A 14mOhm 110nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFB4710PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
75 A
Rds On - Resistencia de la fuente de drenaje:
11 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
110 nC
Pd - Disipación de energía:
200 W
Configuración:
Único
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
4.4 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
SP001556118
Unidad de peso:
0.211644 oz
Tags
IRFB4710P, IRFB47, IRFB4, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.011Ohm;ID 75A;TO-220AB;PD 200W;VGS +/-20V
***ure Electronics
Single N-Channel 100 V 0.014 Ohm 110 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop Global
Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N Channel Mosfet, 100V, 75A, To-220Ab; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:75A; On Resistance Rds(On):0.014Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 100V, 75A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.74°C/W; On State Resistance Max:14mohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:300A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V
Parte # Mfg. Descripción Valores Precio
IRFB4710PBF
DISTI # IRFB4710PBF-ND		Infineon Technologies AGMOSFET N-CH 100V 75A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$1.6065
  • 500:$1.9035
  • 100:$2.3985
  • 50:$2.6460
  • 1:$3.2400
IRFB4710PBF
DISTI # IRFB4710PBF		Infineon Technologies AGMOSFET, 100V, 75A, 14 MOHM, 110 NC QG, TO-220AB (Alt: IRFB4710PBF)
RoHS: Compliant
Min Qty: 50		Europe - 0
    IRFB4710PBF
    DISTI # IRFB4710PBF    		Infineon Technologies AGMOSFET, 100V, 75A, 14 MOHM, 110 NC QG, TO-220AB (Alt: IRFB4710PBF)
    RoHS: Compliant
    Min Qty: 1000    		Asia - 0
      IRFB4710PBF
      DISTI # SP001556118      		Infineon Technologies AGMOSFET, 100V, 75A, 14 MOHM, 110 NC QG, TO-220AB (Alt: SP001556118)
      RoHS: Compliant
      Min Qty: 1      		Europe - 0
      • 1:€1.1239
      • 10:€0.8729
      • 25:€0.8099
      • 50:€0.7849
      • 100:€0.7719
      • 500:€0.7649
      • 1000:€0.7549
      IRFB4710PBF-EL
      DISTI # IRFB4710PBF      		Infineon Technologies AGTrans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4710PBF)
      RoHS: Compliant
      Min Qty: 450
      Container: Tube      		Americas - 0
      • 450:$1.0369
      • 550:$0.9999
      • 1000:$0.9629
      • 2250:$0.9309
      • 4500:$0.9139
      IRFB4710PBF.
      DISTI # 27AC6771      		Infineon Technologies AGN CHANNEL MOSFET, 100V, 75A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,MSL:- RoHS Compliant: Yes0
      • 1:$2.6500
      • 10:$2.2500
      • 100:$1.8000
      • 500:$1.5800
      IRFB4710PBF
      DISTI # 70017021      		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 0.011Ohm,ID 75A,TO-220AB,PD 200W,VGS +/-20V
      RoHS: Compliant      		0
      • 450:$2.4400
      IRFB4710PBF
      DISTI # 942-IRFB4710PBF      		Infineon Technologies AGMOSFET MOSFT 100V 75A 14mOhm 110nC
      RoHS: Compliant      		0
      • 1:$2.6500
      • 10:$2.2500
      • 100:$1.8000
      • 500:$1.5800
      IRFB4710PBFInternational Rectifier 
      RoHS: Not Compliant      		10
      • 1000:$1.1800
      • 500:$1.2500
      • 100:$1.3000
      • 25:$1.3500
      • 1:$1.4600
      IRFB4710PBFInternational RectifierMOSFET Transistor, N-Channel, TO-220AB3
      • 4:$2.1900
      • 1:$3.2850
      IRFB4710PBFInternational RectifierMOSFET Transistor, N-Channel, TO-220AB99
      • 32:$2.2298
      • 10:$2.4528
      • 1:$3.3447
      IRFB4710PBF
      DISTI # IRFB4710PBF      		Infineon Technologies AGN-Ch 100V 75A 200W 0,014R TO220AB
      RoHS: Compliant      		100
      • 10:€1.3900
      • 50:€1.0900
      • 200:€0.9870
      • 500:€0.9500
      IRFB4710PBF
      DISTI # TMOSP12134      		Infineon Technologies AGMOSFET100V75A
      RoHS: Compliant      		Stock DE - 1400Stock US - 0
      • 50:$1.4300
      • 150:$1.3400
      • 250:$1.2600
      • 550:$1.1369
      • 1000:$1.0963
      IRFB4710PBFInternational RectifierINSTOCK411
        IRFB4710PBF
        DISTI # 8648778        		Infineon Technologies AGMOSFET, N, 100V, 75A, TO-220
        RoHS: Compliant        		0
        • 1:£2.0700
        • 10:£1.1900
        • 100:£1.1600
        • 250:£1.1300
        • 500:£1.0900
        IRFB4710PBF
        DISTI # 8648778        		Infineon Technologies AGMOSFET, N, 100V, 75A, TO-220
        RoHS: Compliant        		0
        • 1:$4.1900
        • 10:$3.5600
        • 100:$2.8500
        • 500:$2.5000
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        Disponibilidad
        Valores:
        Available
        En orden:
        1985
        Ingrese la cantidad:
        El precio actual de IRFB4710PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        2,64 US$
        2,64 US$
        10
        2,25 US$
        22,50 US$
        100
        1,80 US$
        180,00 US$
        500
        1,57 US$
        785,00 US$
        1000
        1,30 US$
        1 300,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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