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MSC035SMA070S

MSC035SMA070S
Mfr. #:
MSC035SMA070S
Fabricante:
Microchip / Microsemi
Descripción:
MOSFET UNRLS, FG, SIC MOSFET, TO-268
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MSC035SMA070S Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
MSC035SMA070S más información
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Sic
Estilo de montaje:
SMD / SMT
Paquete / Caja:
D3PAK-3
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
700 V
Rds On - Resistencia de la fuente de drenaje:
44 mOhms
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Marca:
Microchip / Microsemi
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1
Subcategoría:
MOSFET
Tags
MSC03, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
SILICON CARBIDE MOSFETS
***i-Key
MOSFET N-CH 700V D3PAK
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
Imagen Parte # Descripción
MSC035SMA070B

Mfr.#: MSC035SMA070B

OMO.#: OMO-MSC035SMA070B

 MOSFET UNRLS, FG, SIC MOSFET, TO-247
MSC035SMA070S

Mfr.#: MSC035SMA070S

OMO.#: OMO-MSC035SMA070S

 MOSFET UNRLS, FG, SIC MOSFET, TO-268
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de MSC035SMA070S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
21,10 US$
21,10 US$
5
20,28 US$
101,40 US$
10
19,52 US$
195,20 US$
25
17,94 US$
448,50 US$
50
17,28 US$
864,00 US$
100
16,67 US$
1 667,00 US$
250
15,30 US$
3 825,00 US$
500
14,56 US$
7 280,00 US$
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