STH315N10F7-2

STH315N10F7-2
Mfr. #:
STH315N10F7-2
Fabricante:
STMicroelectronics
Descripción:
MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STH315N10F7-2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
STH315N10F7-2 más información STH315N10F7-2 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
H2PAK-2
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
180 A
Rds On - Resistencia de la fuente de drenaje:
2.3 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
180 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
315 W
Configuración:
Único
Calificación:
AEC-Q101
Nombre comercial:
STripFET
Embalaje:
Carrete
Serie:
STH315N10F7-2
Tipo de transistor:
1 N-Channel
Marca:
STMicroelectronics
Otoño:
40 ns
Tipo de producto:
MOSFET
Hora de levantarse:
108 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
148 ns
Tiempo típico de retardo de encendido:
62 ns
Unidad de peso:
0.139332 oz
Tags
STH315, STH31, STH3, STH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET
***ical
Trans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
***nell
MOSFET, N CH, 100V, 180A, H2PAK-3; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:315W; Transistor Case Style:H2PAK; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015)
STH315N10F7 STripFET VII DeepGATE Power MOSFETs
STMicroelectronics STH315N10F7 STripFET™ VII DeepGATE™ Power MOSFETs are AEC-Q101 automotive-qualified N-channel Power MOSFETs that combine best-in-class on-state resistance with low internal capacitances and gate charge, enhancing both conduction and switching efficiency. Available in TO-220 or 2-lead or 6-lead H2PAK industry-standard packages, these devices help designers reduce board size and maximize power density. STH315N10F7 MOSFETs also have high avalanche ruggedness to survive potentially damaging conditions. With a 100V rating, these STripFET VII DeepGATE MOSFETs provide an adequate safety margin to withstand typical over-voltage surges. STH315N10F7 STripFET VII DeepGATE MOSFETs are also well-suited for highly rugged performance in automotive and switching applications.
STripFET Power MOSFETs
STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
STripFET™ F7 Power MOSFETs
STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. The STripFET F7 feature high avalanche ruggedness.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Parte # Mfg. Descripción Valores Precio
STH315N10F7-2
DISTI # V72:2272_18459496
STMicroelectronicsTrans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant
370
  • 250:$3.3550
  • 100:$3.5400
  • 25:$4.0030
  • 10:$4.0480
  • 1:$4.6449
STH315N10F7-2
DISTI # 497-14718-1-ND
STMicroelectronicsMOSFET N-CH 100V 180A H2PAK-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1938In Stock
  • 500:$3.8706
  • 100:$4.7800
  • 10:$5.8290
  • 1:$6.5300
STH315N10F7-2
DISTI # 497-14718-6-ND
STMicroelectronicsMOSFET N-CH 100V 180A H2PAK-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1938In Stock
  • 500:$3.8706
  • 100:$4.7800
  • 10:$5.8290
  • 1:$6.5300
STH315N10F7-2
DISTI # 497-14718-2-ND
STMicroelectronicsMOSFET N-CH 100V 180A H2PAK-2
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
1000In Stock
  • 1000:$3.1693
STH315N10F7-2
DISTI # 31227438
STMicroelectronicsTrans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant
370
  • 250:$3.3550
  • 100:$3.5400
  • 25:$4.0030
  • 10:$4.0480
  • 3:$4.6449
STH315N10F7-2
DISTI # 30613954
STMicroelectronicsTrans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant
64
  • 50:$3.1492
  • 10:$3.7230
  • 4:$6.4005
STH315N10F7-2
DISTI # STH315N10F7-2
STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin H2PAK T/R - Tape and Reel (Alt: STH315N10F7-2)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$2.9900
  • 2000:$2.8900
  • 4000:$2.7900
  • 6000:$2.5900
  • 10000:$2.5900
STH315N10F7-2
DISTI # 511-STH315N10F7-2
STMicroelectronicsMOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package
RoHS: Compliant
967
  • 1:$5.4500
  • 10:$4.6300
  • 100:$4.0200
  • 250:$3.8100
  • 500:$3.4200
  • 1000:$2.8900
STH315N10F7-2
DISTI # C1S730201165861
STMicroelectronicsMOSFETs
RoHS: Compliant
370
  • 1:$3.3700
STH315N10F7-2
DISTI # C1S730200906207
STMicroelectronicsTrans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant
64
  • 50:$2.4700
  • 10:$2.9200
  • 1:$5.0200
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NOR Flash SPI FLASH NOR SLC 256MX4 WPDFN DDP
RB578VYM100FHTR

Mfr.#: RB578VYM100FHTR

OMO.#: OMO-RB578VYM100FHTR

Schottky Diodes & Rectifiers 100V Vr 0.7A Io SBD SOD-323HE 0.7A
CRCW08051K00FKEAC

Mfr.#: CRCW08051K00FKEAC

OMO.#: OMO-CRCW08051K00FKEAC

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Mfr.#: MP34DT05TR-A

OMO.#: OMO-MP34DT05TR-A

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RB578VYM100FHTR

Mfr.#: RB578VYM100FHTR

OMO.#: OMO-RB578VYM100FHTR-ROHM-SEMI

DIODE SCHOTTKY 100V SMD
MAX6079ALA25+

Mfr.#: MAX6079ALA25+

OMO.#: OMO-MAX6079ALA25--MAXIM-INTEGRATED

Nuevo y original
CRCW08051K00FKEAC

Mfr.#: CRCW08051K00FKEAC

OMO.#: OMO-CRCW08051K00FKEAC-VISHAY-DALE

D12/CRCW0805-C 100 1K0 1% ET1
CRCW080510K0FKEAC

Mfr.#: CRCW080510K0FKEAC

OMO.#: OMO-CRCW080510K0FKEAC-VISHAY-DALE

D12/CRCW0805-C 100 10K 1% ET1
Disponibilidad
Valores:
907
En orden:
2890
Ingrese la cantidad:
El precio actual de STH315N10F7-2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,44 US$
5,44 US$
10
4,63 US$
46,30 US$
100
4,01 US$
401,00 US$
250
3,80 US$
950,00 US$
500
3,41 US$
1 705,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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