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IDW40G120C5BFKSA1

IDW40G120C5BFKSA1
Mfr. #:
IDW40G120C5BFKSA1
Fabricante:
Infineon Technologies
Descripción:
Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IDW40G120C5BFKSA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IDW40G120C5BFKSA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Diodos, rectificadores - simple
Producto
Diodos de carburo de silicio Schottky
embalaje
Tubo
Alias ​​de parte
IDW40G120C5B SP001020714
Unidad de peso
1.340411 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-247-3
Tecnología
Sic
Configuración
Cátodo común de doble ánodo
Disipación de potencia Pd
402 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Vf-Tensión directa
1.4 V
Vr-Tensión inversa
1.2 kV
Ir-Corriente inversa
23 uA
If-Forward-Current
40 A
Vrrm-Tensión-inversa-repetitiva
1.2 kV
Ifsm-Forward-Surge-Current
290 A
Tags
IDW40G1, IDW40G, IDW4, IDW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IDW40G120C5B Series 1200V 110A 5th Generation ThinQ!™SiC Schottky Diode-TO-247-3
***ical
Diode Schottky 1.2KV 110A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Diode Schottky 1.2KV 110A 3-Pin TO-247 Tube
***an P&S
1200V,40A,Silicon Carbide Schottky Diode
***i-Key
DIODE GEN PURP 1200V 55A TO247-3
***ukat
SiC-Schottky 1200V 40A(2x20) TO247
***ronik
SiC-D 1200 40A 1,4V TO247-3
***ark
Silicon Carbide Schottky Diode, 1.2Kv; Product Range:thinq Series; Diode Configuration:common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2Kv; Continuous Forward Current If:110A; Total Capacitive Charge Qc:202Nc; Diode Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. SILICON CARBIDE SCHOTTKY DIODE, 1.2KV; Product Range:thinQ Series; Diode Configuration:Common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:110A; Total Capacitive Charge Qc:202nC; Diode Case Style:TO-247; No. of Pins:3 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Forward Current If(AV):110A; Forward Surge Current Ifsm Max:145A; Forward Voltage VF Max:1.65V; Operating Temperature Max:175°C; Semiconductor Technology:SiC
***nell
DIODO SCHOTTKY CARB. SILICIO, 1.2KV; Gamma Prodotti:thinQ Series; Configurazione Diodo:Catodo Comune; Tensione Inversa Ripetitiva Vrrm Max:1.2kV; Corrente Diretta Continua If:110A; Potenza Reattiva Capacitiva Qc:202nC; Modello Involucro Diodo:TO-247; Numero di Pin:3 Pin; Temperatura di Giunzione Tj Max:175°C; Standard di Qualifica Automotive:-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Diretta If(AV):110A; Corrente di Picco Diretta Ifsm Max:145A; Tecnologia Semiconduttori:SiC; Temperatura di Esercizio Max:175°C; Tensione Diretta VF Max:1.65V
***ineon
With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
Gen 5 1200V CoolSiC™ Schottky Diodes
Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage, and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
Parte # Mfg. Descripción Valores Precio
IDW40G120C5BFKSA1
DISTI # V99:2348_06377009		Infineon Technologies AGDiode Schottky 1.2KV 110A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		134
  • 500:$20.8100
  • 250:$21.7200
  • 100:$21.8600
  • 25:$24.8299
  • 10:$25.8299
  • 5:$27.4400
  • 1:$27.7400
IDW40G120C5BFKSA1
DISTI # IDW40G120C5BFKSA1-ND		Infineon Technologies AGDIODE GEN PURP 1200V 55A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		256In Stock
  • 10:$32.0560
  • 1:$34.5100
IDW40G120C5BFKSA1
DISTI # 30341104		Infineon Technologies AGDiode Schottky 1.2KV 110A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		134
  • 100:$21.8600
  • 25:$24.8298
  • 10:$25.8298
  • 5:$27.4400
  • 1:$27.7400
IDW40G120C5BFKSA1
DISTI # IDW40G120C5BFKSA1		Infineon Technologies AGDiode Schottky 1.2KV 110A 3-Pin TO-247 Tube - Rail/Tube (Alt: IDW40G120C5BFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$22.3900
  • 480:$21.5900
  • 960:$20.7900
  • 1440:$20.0900
  • 2400:$19.6900
IDW40G120C5BFKSA1
DISTI # SP001020714		Infineon Technologies AGDiode Schottky 1.2KV 110A 3-Pin TO-247 Tube (Alt: SP001020714)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€23.9900
  • 10:€21.9900
  • 25:€21.0900
  • 50:€20.2900
  • 100:€19.5900
  • 500:€18.8900
  • 1000:€17.5900
IDW40G120C5BFKSA1
DISTI # 97Y1812		Infineon Technologies AGSILICON CARBIDE SCHOTTKY DIODE, 1.2KV,Product Range:thinQ Series,Diode Configuration:Common Cathode,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:110A,Total Capacitive Charge Qc:202nC,Diode Case , RoHS Compliant: Yes234
  • 1:$35.1400
  • 5:$34.8200
  • 10:$32.7100
  • 25:$31.4100
  • 50:$29.9500
  • 100:$28.4900
  • 250:$27.3600
IDW40G120C5BFKSA1
DISTI # 726-IDW40G120C5BFKSA		Infineon Technologies AGSchottky Diodes & Rectifiers SIC CHIP/DISCRETE
RoHS: Compliant		287
  • 1:$30.0500
  • 5:$29.7400
  • 10:$27.7200
  • 25:$26.4700
  • 100:$23.6700
  • 250:$22.5800
IDW40G120C5BFKSA1
DISTI # IDW40G120C5BFKSA1		Infineon Technologies AGDiode: Schottky rectifying,SiC,THT,1.2kV,2x20A,402W,Ir:23uA38
  • 1:$34.8000
  • 3:$31.2700
  • 10:$29.2200
IDW40G120C5BFKSA1
DISTI # IDW40G120C5B		Infineon Technologies AGSiC-Schottky 1200V 40A(2x20) TO247
RoHS: Compliant		30
  • 1:€25.3000
  • 25:€21.3000
  • 100:€19.3000
  • 200:€18.5500
IDW40G120C5BFKSA1
DISTI # 2617416		Infineon Technologies AGSILICON CARBIDE SCHOTTKY DIODE, 1.2KV
RoHS: Compliant		240
  • 1:£22.9600
  • 5:£22.7300
  • 10:£20.2300
  • 50:£18.7400
  • 100:£17.2500
IDW40G120C5BFKSA1
DISTI # C1S322000567328		Infineon Technologies AGRectifier Diodes
RoHS: Compliant		134
  • 100:$21.8600
  • 25:$24.8298
  • 10:$25.8200
  • 5:$27.4400
  • 1:$27.7400
IDW40G120C5BFKSA1
DISTI # 2617416		Infineon Technologies AGSILICON CARBIDE SCHOTTKY DIODE, 1.2KV
RoHS: Compliant		234
  • 1:$49.9300
  • 10:$46.0500
Imagen Parte # Descripción
IDW40G120C5BFKSA1

Mfr.#: IDW40G120C5BFKSA1

OMO.#: OMO-IDW40G120C5BFKSA1

 Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
IDW40G120C5B

Mfr.#: IDW40G120C5B

OMO.#: OMO-IDW40G120C5B-1190

 Diode SiC Schottky 1200V 110A 3-Pin TO-247 Tube (Alt: IDW40G120C5B)
IDW40G120C5B D4012B5

Mfr.#: IDW40G120C5B D4012B5

OMO.#: OMO-IDW40G120C5B-D4012B5-1190

 Nuevo y original
IDW40G120C5BFKSA1

Mfr.#: IDW40G120C5BFKSA1

OMO.#: OMO-IDW40G120C5BFKSA1-INFINEON-TECHNOLOGIES

 Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de IDW40G120C5BFKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
29,54 US$
29,54 US$
10
28,06 US$
280,58 US$
100
26,58 US$
2 658,15 US$
500
25,10 US$
12 552,40 US$
1000
23,63 US$
23 628,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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