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DMT68M8LSS-13

DMT68M8LSS-13
Mfr. #:
DMT68M8LSS-13
Fabricante:
Diodes Incorporated
Descripción:
MOSFET MOSFETBVDSS: 41V-60V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
DMT68M8LSS-13 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
DMT68M8LSS-13 más información
Atributo del producto
Valor de atributo
Fabricante:
Diodos incorporados
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
28.9 A
Rds On - Resistencia de la fuente de drenaje:
6.7 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
31.8 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1.9 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Tipo de transistor:
1 N-Channel
Marca:
Diodos incorporados
Otoño:
13.9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
7.9 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
25.2 ns
Tiempo típico de retardo de encendido:
4.6 ns
Unidad de peso:
0.002610 oz
Tags
DMT68, DMT6, DMT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Trans Mosfet N-ch 60V 28.9A 8-PIN SOIC T/r
***des Inc SCT
80V N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ure Electronics
Trans MOSFET N-CH 60V 12.1A 8-Pin SO T/R
***et
MOSFET BVDSS: 41V~60V SO-8 T&R 2.5K
***i-Key
MOSFET N-CHANNEL 60V 28.9A 8SO
DMTx MOSFETs
Diodes Incorporated DMTx MOSFETs are N-channel enhancement mode MOSFETs with low on-resistance and fast switching. These MOSFETs are also designed to meet the stringent requirements of automotive applications. Diodes Incorporated DMTx MOSFETs are ideal for high-efficiency power management applications.
Gate Drivers
Diodes Incorporated Gate Drivers cover a multitude of applications in power systems and motor drives. These gate drivers act as the interface between microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.
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Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de DMT68M8LSS-13 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,56 US$
0,56 US$
10
0,47 US$
4,72 US$
100
0,29 US$
28,80 US$
1000
0,22 US$
222,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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