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IXFK32N80Q3

IXFK32N80Q3
Mfr. #:
IXFK32N80Q3
Fabricante:
Littelfuse
Descripción:
MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFK32N80Q3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFK32N80Q3 DatasheetIXFK32N80Q3 Datasheet (P4-P5)
ECAD Model:
Más información:
IXFK32N80Q3 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-264-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
32 A
Rds On - Resistencia de la fuente de drenaje:
270 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
140 nC
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1 kW
Configuración:
Único
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Serie:
IXFK32N80
Tipo de transistor:
1 N-Channel
Marca:
IXYS
Tipo de producto:
MOSFET
Hora de levantarse:
300 ns
Cantidad de paquete de fábrica:
25
Subcategoría:
MOSFET
Unidad de peso:
0.264555 oz
Tags
IXFK32N, IXFK32, IXFK3, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
***i-Key
MOSFET N-CH 800V 32A TO264AA
***emi
N-Channel Power MOSFET, QFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ical
Trans IGBT Chip N-CH 1200V 64A 500000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL40N120AND Series 1200 V 64 A Flange Mount NPT IGBT - TO-264
***nell
IGBT,N CH,FAST,W/DIO,1200V,64A,TO264; Transistor Type: IGBT; DC Collector Current: 64A; Collector Emitter Voltage Vces: 1.2kV; Power Dissipation Pd: 500W; Collector Emitter Voltage V(br); Available until stocks are exhausted
***rchild Semiconductor
Employing NPT technology, Fairchild's AN series of IGBT provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
***hard Electronics
STMICROELECTRONICS 2STA1943Bipolar (BJT) Single Transistor, PNP, 230 V, 30 MHz, 150 W, 8 A, 80
***ure Electronics
2STA1943 Series PNP 230 V 15 A Epitaxial Planar Bipolar Transistor - TO-264
***icroelectronics
High power PNP epitaxial planar bipolar transistor
***ical
Trans GP BJT PNP 230V 15A 3-Pin TO-264 Tube
*** Electronic Components
Bipolar Transistors - BJT High Pwr PNP BiPolar Trans
***r Electronics
Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
***ment14 APAC
Transistor, PNP TO-264; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:230V; Transition Frequency ft:30MHz; Power Dissipation Pd:150W;
***nell
TRANSISTOR, PNP TO-264; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 230V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 150W; DC Collector Current: 8A; DC Current Gain hFE: 80hFE; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 3V; Continuous Collector Current Ic Max: 15A; Current Ic Continuous a Max: 8A; Current Ic hFE: 1A; Device Marking: 2STA1943; Gain Bandwidth ft Typ: 30MHz; Hfe Min: 80; Power Dissipation Ptot Max: 150W; Termination Type: Through Hole; Voltage Vcbo: 230V
***icroelectronics
High power PNP epitaxial planar bipolar transistor
*** Electronics
STMICROELECTRONICS 2STA2121Bipolar (BJT) Single Transistor, PNP, -250 V, 25 MHz, 220 W, -17 A, 80
***ical
Trans GP BJT PNP 250V 17A 3-Pin TO-264 Tube
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
*** Electronic Components
Bipolar Transistors - BJT PNP Power Transisto
***nell
TRANS PNP 250V 17A BIT-LA TO-264; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -250V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 220W; DC Collector Current: -17A; DC Current Gain hFE: 80hFE; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): -3V; Current Ic Continuous a Max: -8A; Gain Bandwidth ft Typ: 25MHz; Hfe Min: 80; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Through Hole; Transistor Type: Power Bipolar
***hard Electronics
Trans MOSFET N-CH 400V 50A 3-Pin(3+Tab) TO-264 Rail
***ser
MOSFETs 400V N-Channel QFET
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFK32N80Q3
DISTI # IXFK32N80Q3-ND		IXYS CorporationMOSFET N-CH 800V 32A TO-264
RoHS: Compliant
Min Qty: 1
Container: Tube		50In Stock
  • 100:$16.3200
  • 25:$17.7600
  • 1:$21.1200
IXFK32N80Q3
DISTI # 747-IXFK32N80Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
RoHS: Compliant		0
  • 1:$24.2900
  • 10:$22.0800
  • 25:$20.4200
  • 50:$18.7900
  • 100:$18.3300
  • 250:$16.8000
  • 500:$15.2500
Imagen Parte # Descripción
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Mfr.#: IXFK32N100X

OMO.#: OMO-IXFK32N100X

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IXFK32N100P

Mfr.#: IXFK32N100P

OMO.#: OMO-IXFK32N100P

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IXFK32N60C

Mfr.#: IXFK32N60C

OMO.#: OMO-IXFK32N60C-1190

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IXFK38N80Q2TRL

Mfr.#: IXFK38N80Q2TRL

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IXFK300N20X3

Mfr.#: IXFK300N20X3

OMO.#: OMO-IXFK300N20X3-IXYS-CORPORATION

 200V/300A ULTRA JUNCTION X3-CLAS
IXFK32N100P

Mfr.#: IXFK32N100P

OMO.#: OMO-IXFK32N100P-IXYS-CORPORATION

 Darlington Transistors MOSFET 32 Amps 1000V 0.32 Rds
IXFK35N50

Mfr.#: IXFK35N50

OMO.#: OMO-IXFK35N50-IXYS-CORPORATION

 MOSFET 35 Amps 500V 0.15 Rds
IXFK38N80Q2

Mfr.#: IXFK38N80Q2

OMO.#: OMO-IXFK38N80Q2-IXYS-CORPORATION

 MOSFET 38 Amps 800V 0.22 Rds
IXFK360N10T

Mfr.#: IXFK360N10T

OMO.#: OMO-IXFK360N10T-IXYS-CORPORATION

 MOSFET N-CH 100V 360A TO-264
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de IXFK32N80Q3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
24,29 US$
24,29 US$
10
22,08 US$
220,80 US$
25
20,42 US$
510,50 US$
50
18,79 US$
939,50 US$
100
18,33 US$
1 833,00 US$
250
16,80 US$
4 200,00 US$
500
15,25 US$
7 625,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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