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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| RFD4N06LSM9A DISTI # RFD4N06LSM9A-ND | ON Semiconductor | MOSFET N-CH 60V 4A DPAK Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| RFD4N06LSM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 67132 |
|
| RFD4N06L | Harris Semiconductor | 4A, 60V, 0.6ohm, N-Channel, POWER MOSFET RoHS: Not Compliant | 1424 |
|
| D4N06L | Harris Semiconductor | 144 | ||
| RFD4N06L | HARTING Technology Group | INSTOCK | 2280 | |
| RFD4N06L | INSTOCK | 2112 | ||
| RFD4N06L | HARTING Technology Group | Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | Europe - 975 | |
| RFD4N06LSM | ISC | DPAK/TO-252 | 5000 | |
| RFD4N06L | ISC | IPAK/TO-251 | 5000 |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: D4N01 OMO.#: OMO-D4N01-1190 |
Nuevo y original |
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Mfr.#: D4N01/2007/99 OMO.#: OMO-D4N01-2007-99-1190 |
Nuevo y original |
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Mfr.#: D4N013 OMO.#: OMO-D4N013-1190 |
Nuevo y original |
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Mfr.#: D4N01A OMO.#: OMO-D4N01A-1190 |
Nuevo y original |
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Mfr.#: D4N01C-3 OMO.#: OMO-D4N01C-3-1190 |
Nuevo y original |
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Mfr.#: D4N03LA OMO.#: OMO-D4N03LA-1190 |
Nuevo y original |
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Mfr.#: D4N06L OMO.#: OMO-D4N06L-1190 |
Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
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Mfr.#: D4N07 OMO.#: OMO-D4N07-1190 |
Nuevo y original |