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SI7904BDN-T1-GE3

SI7904BDN-T1-GE3
Mfr. #:
SI7904BDN-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET 2N-CH 20V 6A PPAK 1212-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI7904BDN-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET: matrices
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI7904BDN-GE3
Estilo de montaje
SMD / SMT
Paquete-Estuche
PowerPAKR 1212-8 Dual
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
PowerPAKR 1212-8 Dual
Configuración
Doble
Tipo FET
2 N-Channel (Dual)
Potencia máxima
17.8W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
20V
Entrada-Capacitancia-Ciss-Vds
860pF @ 10V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
6A
Rds-On-Max-Id-Vgs
30 mOhm @ 7.1A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Puerta-Carga-Qg-Vgs
24nC @ 8V
Disipación de potencia Pd
2.5 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
6 ns 5 ns
Hora de levantarse
60 ns 15 ns
Vgs-Puerta-Fuente-Voltaje
8 V
Id-corriente-de-drenaje-continua
6 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Vgs-th-Gate-Source-Threshold-Voltage
1 V
Resistencia a la fuente de desagüe de Rds
30 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
25 ns
Tiempo de retardo de encendido típico
7 ns 5 ns
Qg-Gate-Charge
16 nC
Modo de canal
Mejora
Tags
SI7904BDN-T1, SI7904BDN-T, SI7904BD, SI7904B, SI7904, SI790, SI79, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
SI7904BDN-T1-GE3
DISTI # V72:2272_09216406		Vishay IntertechnologiesTrans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		1956
  • 1000:$0.5007
  • 500:$0.6100
  • 250:$0.6307
  • 100:$0.7008
  • 25:$0.8682
  • 10:$0.8844
  • 1:$1.0185
SI7904BDN-T1-GE3
DISTI # SI7904BDN-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8726In Stock
  • 1000:$0.5420
  • 500:$0.6865
  • 100:$0.8852
  • 10:$1.1200
  • 1:$1.2600
SI7904BDN-T1-GE3
DISTI # SI7904BDN-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8726In Stock
  • 1000:$0.5420
  • 500:$0.6865
  • 100:$0.8852
  • 10:$1.1200
  • 1:$1.2600
SI7904BDN-T1-GE3
DISTI # SI7904BDN-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 3000:$0.4911
SI7904BDN-T1-GE3
DISTI # 29000010		Vishay IntertechnologiesTrans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		1956
  • 1000:$0.5007
  • 500:$0.6100
  • 250:$0.6307
  • 100:$0.7008
  • 25:$0.8682
  • 14:$0.8844
SI7904BDN-T1-GE3
DISTI # SI7904BDN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7904BDN-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 3000
  • 3000:$0.5679
  • 6000:$0.5509
  • 12000:$0.5289
  • 18000:$0.5139
  • 30000:$0.5009
SI7904BDN-T1-GE3
DISTI # SI7904BDN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R (Alt: SI7904BDN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI7904BDN-T1-GE3
    DISTI # 33P5445    		Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 20V, 6A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):45mohm,Rds(on) Test Voltage Vgs:1.8V,Threshold Voltage Vgs:1V,Product Range:- , RoHS Compliant: Yes0
    • 1:$0.5600
    • 3000:$0.5560
    • 6000:$0.5290
    • 12000:$0.4690
    SI7904BDN-T1-GE3
    DISTI # 26R1941    		Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 20V, 6A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):45mohm,Rds(on) Test Voltage Vgs:1.8V,Threshold Voltage Vgs:1V,Product Range:- , RoHS Compliant: Yes0
    • 1:$1.3100
    • 25:$1.0800
    • 50:$0.9520
    • 100:$0.8230
    • 250:$0.7660
    • 500:$0.7080
    • 1000:$0.5590
    SI7904BDN-T1-GE3
    DISTI # 70617005    		Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
    RoHS: Compliant    		0
    • 300:$0.5970
    • 600:$0.5850
    • 1500:$0.5670
    SI7904BDN-T1-GE3
    DISTI # 781-SI7904BDN-T1-GE3    		Vishay IntertechnologiesMOSFET 20V Vds 8V Vgs PowerPAK 1212-8
    RoHS: Compliant    		1236
    • 1:$1.3100
    • 10:$1.0800
    • 100:$0.8230
    • 500:$0.7080
    • 1000:$0.5590
    • 3000:$0.5220
    SI7904BDN-T1-GE3
    DISTI # 8181419P    		Vishay IntertechnologiesTRANS MOSFET N-CH 20V 6AN, RL80
    • 50:£0.5600
    • 200:£0.4940
    • 500:£0.4540
    SI7904BDN-T1-GE3
    DISTI # C1S803601026024    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R
    RoHS: Compliant    		1956
    • 250:$0.6307
    • 100:$0.7008
    • 25:$0.8682
    • 10:$0.8844
    SI7904BDN-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 8V Vgs PowerPAK 1212-8
    RoHS: Compliant    		Americas -
      SI7904BDN-T1-GE3
      DISTI # 1871388      		Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 20V, 6A
      RoHS: Compliant      		0
      • 3000:£0.4920
      Imagen Parte # Descripción
      SI7904BDN-T1-GE3

      Mfr.#: SI7904BDN-T1-GE3

      OMO.#: OMO-SI7904BDN-T1-GE3

      		 MOSFET 20V Vds 8V Vgs PowerPAK 1212-8
      SI7904BDN-T1-E3-CUT TAPE

      Mfr.#: SI7904BDN-T1-E3-CUT TAPE

      OMO.#: OMO-SI7904BDN-T1-E3-CUT-TAPE-1190

      		 Nuevo y original
      SI7904BDN-T1-E3

      Mfr.#: SI7904BDN-T1-E3

      OMO.#: OMO-SI7904BDN-T1-E3-VISHAY

      		 MOSFET 2N-CH 20V 6A 1212-8
      SI7904BDN-T1-GE3

      Mfr.#: SI7904BDN-T1-GE3

      OMO.#: OMO-SI7904BDN-T1-GE3-VISHAY

      		 MOSFET 2N-CH 20V 6A PPAK 1212-8
      SI7904BDN-TI

      Mfr.#: SI7904BDN-TI

      OMO.#: OMO-SI7904BDN-TI-1190

      		 Nuevo y original
      SI7904BDNT1E3

      Mfr.#: SI7904BDNT1E3

      OMO.#: OMO-SI7904BDNT1E3-1190

      		 Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      Disponibilidad
      Valores:
      Available
      En orden:
      1500
      Ingrese la cantidad:
      El precio actual de SI7904BDN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,70 US$
      0,70 US$
      10
      0,67 US$
      6,70 US$
      100
      0,63 US$
      63,45 US$
      500
      0,60 US$
      299,65 US$
      1000
      0,56 US$
      564,00 US$
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