We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SPB03N60S5ATMA1 DISTI # SPB03N60S5ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 600V 3.2A TO-263 Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SPB03N60S5ATMA1 DISTI # SPB03N60S5ATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 600V 3.2A TO-263 Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SPB03N60S5ATMA1 DISTI # SPB03N60S5ATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 600V 3.2A TO-263 Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SPB03N60S5 | Infineon Technologies AG | CoolMOS, 3.2A I(D), 600V, 1.4ohm, N-Channel, Power MOSFET RoHS: Compliant | 1000 |
|
| SPB03N60S5 | Siemens | 3.2 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 1548 |
|
| SPB03N60S5 | Infineon Technologies AG | 3613 | ||
| SPB03N60S5E3045A | Infineon Technologies AG | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | Europe - 1000 |
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: SPB45N06S3-16 OMO.#: OMO-SPB45N06S3-16-1190 |
Nuevo y original |