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NE651R479A-T1-A

NE651R479A-T1-A
Mfr. #:
NE651R479A-T1-A
Fabricante:
CEL
Descripción:
RF JFET Transistors L&S Band GaAs HJFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NE651R479A-T1-A Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
CEL
Categoria de producto:
Transistores RF JFET
RoHS:
Y
Tipo de transistor:
HFET
Tecnología:
GaAs
Ganar:
12 dB
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
8 V
Vgs - Voltaje de ruptura de puerta-fuente:
- 4 V
Id - Corriente de drenaje continua:
1 A
Potencia de salida:
30 dBm
Temperatura máxima de funcionamiento:
+ 125 C
Pd - Disipación de energía:
2.5 W
Estilo de montaje:
SMD / SMT
Paquete / Caja:
79A
Embalaje:
Carrete
Frecuencia de operación:
1.9 GHz
Producto:
RF JFET
Escribe:
GaAs HFET
Marca:
CEL
P1dB - Punto de compresión:
27 dBm
Tipo de producto:
Transistores RF JFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
Transistores
Tags
NE651R479A-T, NE651R, NE651, NE65, NE6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
Discrete Power Devices L&S; Band GaAs HJFET
***et
Trans JFET N-CH 8V 1000mA 4-Pin Case 79A T/R
***i-Key
HJ-FET GAAS 1.9GHZ 1W 79A
Parte # Mfg. Descripción Valores Precio
NE651R479A-T1-A
DISTI # NE651R479A-T1-A-ND		California Eastern Laboratories (CEL)FET RF 8V 1.9GHZ 79A
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    NE651R479A-T1-A
    DISTI # 551-NE651R479A-T1A    		California Eastern Laboratories (CEL)RF JFET Transistors L&S Band GaAs HJFET
    RoHS: Compliant    		0
      NE651R479A-T1-ARenesas Electronics CorporationTransistor
      RoHS: Compliant      		4875
      • 1000:$5.6600
      • 500:$5.9600
      • 100:$6.2100
      • 25:$6.4700
      • 1:$6.9700
      Imagen Parte # Descripción
      NE651R479A-EVPW24

      Mfr.#: NE651R479A-EVPW24

      OMO.#: OMO-NE651R479A-EVPW24

      		 RF Development Tools For NE651R479A-A Power at 2.4 GHz
      NE651R479A-EVPW35

      Mfr.#: NE651R479A-EVPW35

      OMO.#: OMO-NE651R479A-EVPW35

      		 RF Development Tools For NE651R479A-A Power at 3.5 GHz
      NE651R479A-T1-A

      Mfr.#: NE651R479A-T1-A

      OMO.#: OMO-NE651R479A-T1-A

      		 RF JFET Transistors L&S Band GaAs HJFET
      NE651R479A-EVPW19

      Mfr.#: NE651R479A-EVPW19

      OMO.#: OMO-NE651R479A-EVPW19

      		 RF Development Tools For NE651R479A-A Power at 1.9 GHz
      NE651R479A

      Mfr.#: NE651R479A

      OMO.#: OMO-NE651R479A-1152

      		 RF JFET Transistors L&S Band GaAs HJFET
      NE651R479A-T1

      Mfr.#: NE651R479A-T1

      OMO.#: OMO-NE651R479A-T1-1190

      		 Nuevo y original
      NE651R479A-T1(NE651R479

      Mfr.#: NE651R479A-T1(NE651R479

      OMO.#: OMO-NE651R479A-T1-NE651R479-1190

      		 Nuevo y original
      NE651R479A-T1-A

      Mfr.#: NE651R479A-T1-A

      OMO.#: OMO-NE651R479A-T1-A-CEL

      		 FET RF 8V 1.9GHZ 79A
      Disponibilidad
      Valores:
      Available
      En orden:
      3000
      Ingrese la cantidad:
      El precio actual de NE651R479A-T1-A es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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