SIHU5N50D-E3

SIHU5N50D-E3
Mfr. #:
SIHU5N50D-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 500V Vds 30V Vgs IPAK (TO-251)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHU5N50D-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHU5N50D-E3 DatasheetSIHU5N50D-E3 Datasheet (P4-P6)SIHU5N50D-E3 Datasheet (P7-P8)
ECAD Model:
Más información:
SIHU5N50D-E3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-251-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
500 V
Id - Corriente de drenaje continua:
5.3 A
Rds On - Resistencia de la fuente de drenaje:
1.5 Ohms
Vgs th - Voltaje umbral puerta-fuente:
5 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
10 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
104 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Serie:
D
Marca:
Vishay / Siliconix
Otoño:
11 ns
Tipo de producto:
MOSFET
Hora de levantarse:
11 ns
Cantidad de paquete de fábrica:
75
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
14 ns
Tiempo típico de retardo de encendido:
12 ns
Parte # Alias:
SIHU5N50D-GE3
Unidad de peso:
0.011640 oz
Tags
SIHU5, SIHU, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 500V 5.3A 3-Pin(3+Tab) TO-251AA
***ark
MOSFET, N-CH, 500V, 5.3A, TO-251-3
*** Europe
D SERIES MOSFET N-CHANNEL 500V
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
Parte # Mfg. Descripción Valores Precio
SIHU5N50D-E3
DISTI # SIHU5N50D-E3-ND
Vishay SiliconixMOSFET N-CH 500V 5.3A TO251 IPAK
RoHS: Compliant
Min Qty: 3000
Container: Tube
Temporarily Out of Stock
  • 3000:$0.5199
SIHU5N50D-E3
DISTI # SIHU5N50D-E3
Vishay IntertechnologiesTrans MOSFET N-CH 500V 5.3A 3-Pin(3+Tab) TO-251AA (Alt: SIHU5N50D-E3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.3999
  • 500:€0.4039
  • 100:€0.4119
  • 50:€0.4179
  • 25:€0.4719
  • 10:€0.5819
  • 1:€0.8119
SIHU5N50D-E3
DISTI # SIHU5N50D-E3
Vishay IntertechnologiesTrans MOSFET N-CH 500V 5.3A 3-Pin(3+Tab) TO-251AA - Tape and Reel (Alt: SIHU5N50D-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.4529
  • 18000:$0.4659
  • 12000:$0.4789
  • 6000:$0.4989
  • 3000:$0.5139
SIHU5N50D-E3
DISTI # 04X9742
Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 5.3A, TO-251-3,Transistor Polarity:N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:500V,On Resistance Rds(on):1.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,MSL:- RoHS Compliant: Yes0
  • 1000:$0.6940
  • 500:$0.7820
  • 250:$0.9340
  • 100:$1.0300
  • 50:$1.1500
  • 25:$1.2600
  • 1:$1.3300
SIHU5N50D-E3
DISTI # 99W9519
Vishay IntertechnologiesMOSFET, N-CH, 500V, 5.3A, TO-251-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:500V,On Resistance Rds(on):1.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 10000:$0.4500
  • 6000:$0.4600
  • 4000:$0.4780
  • 2000:$0.5310
  • 1000:$0.5840
  • 1:$0.6090
SIHU5N50D-GE3
DISTI # 78-SIHU5N50D-GE3
Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant
308
  • 1:$1.0500
  • 10:$0.8650
  • 100:$0.6630
  • 500:$0.5710
  • 1000:$0.4500
SIHU5N50D-E3
DISTI # 78-SIHU5N50D-E3
Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant
0
  • 3000:$0.4960
  • 6000:$0.4710
  • 9000:$0.4530
SIHU5N50D-E3Vishay Intertechnologies 2775
    SIHU5N50D-GE3Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs IPAK (TO-251)
    RoHS: Compliant
    Americas -
      Imagen Parte # Descripción
      SIHU5N50D-E3

      Mfr.#: SIHU5N50D-E3

      OMO.#: OMO-SIHU5N50D-E3

      MOSFET 500V Vds 30V Vgs IPAK (TO-251)
      SIHU5N50D-GE3

      Mfr.#: SIHU5N50D-GE3

      OMO.#: OMO-SIHU5N50D-GE3

      MOSFET 500V Vds 30V Vgs IPAK (TO-251)
      SIHU5N50D

      Mfr.#: SIHU5N50D

      OMO.#: OMO-SIHU5N50D-1190

      Nuevo y original
      SIHU5N50D-E3

      Mfr.#: SIHU5N50D-E3

      OMO.#: OMO-SIHU5N50D-E3-VISHAY

      MOSFET N-CH 500V 5.3A TO251 IPAK
      SIHU5N50D-GE3

      Mfr.#: SIHU5N50D-GE3

      OMO.#: OMO-SIHU5N50D-GE3-VISHAY

      MOSFET N-CH 500V 5.3A TO251 IPAK
      Disponibilidad
      Valores:
      Available
      En orden:
      3500
      Ingrese la cantidad:
      El precio actual de SIHU5N50D-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      3000
      0,50 US$
      1 488,00 US$
      6000
      0,47 US$
      2 826,00 US$
      9000
      0,45 US$
      4 077,00 US$
      24000
      0,44 US$
      10 536,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
      Empezar con
      Nuevos productos
      • Si7655DN -20 V P-Channel MOSFET
        Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.
      • P-Channel MOSFETs
        Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
      • Compare SIHU5N50D-E3
        SIHU5N50D vs SIHU5N50DE3 vs SIHU5N50DGE3
      • Si8410DB Chipscale N-Channel MOSFET
        Vishay Siliconix's Si8410DB offers an extremely low on-resistance per area of 30 mΩ mm square.
      • 50 A VRPower® Solution (DrMOS)
        Vishay's VRPower® Solution solution that integrates a high- and low-side MOSFET and a MOSFET driver, optimized for synchronous buck applications.
      • PowerPAIR®
        Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
      Top