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FGL60N100BNTD

FGL60N100BNTD
Mfr. #:
FGL60N100BNTD
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors HIGH POWER
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FGL60N100BNTD Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-264-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1000 V
Voltaje de saturación colector-emisor:
1.5 V
Voltaje máximo del emisor de puerta:
25 V
Corriente continua del colector a 25 C:
60 A
Pd - Disipación de energía:
180 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
FGL60N100BNTD
Embalaje:
Tubo
Corriente continua de colector Ic Max:
60 A
Altura:
26 mm
Longitud:
20 mm
Ancho:
5 mm
Marca:
ON Semiconductor / Fairchild
Corriente continua del colector:
60 A
Corriente de fuga puerta-emisor:
+/- 500 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
375
Subcategoría:
IGBT
Parte # Alias:
FGL60N100BNTD_NL
Unidad de peso:
0.238311 oz
Tags
FGL60N100BNT, FGL60N100B, FGL60N10, FGL60N1, FGL60N, FGL60, FGL6, FGL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
IGBT 1000V 60A 180W TO264 / Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube
***ure Electronics
FGL60N100 Series 1000 V 60 A Through Hole NPT Trench IGBT - TO-264-3L
***ark
TRANSISTOR,IGBT,N-CHAN+DIODE,1kV V(BR)CES,60A I(C),TO-264
***rchild Semiconductor
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
***nell
IGBT, NPT, TO-264; Transistor Type:IGBT; Transistor Polarity:NPN; Voltage, Vces:1000V; Current Ic Continuous a Max:60A; Voltage, Vce Sat Max:2.9V; Power Dissipation:180W; Case Style:TO-264; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:1000V; Current Ic @ Vce Sat:60A; Current, Icm Pulsed:120A; Power, Pd:180W; Time, Rise:320ns
***th Star Micro
Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications Product Highlights: High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode
***ical
Trans IGBT Chip N=-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-264 Rail
***ource
Discrete, Short Circuit Rated IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail
***ure Electronics
SGL50N60RUFD Series 600 V 80 A Flange Mount Short Circuit Rated IGBT -TO-264
***ment14 APAC
SINGLE IGBT, 600V, 80A; Transistor Type:; SINGLE IGBT, 600V, 80A; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
***ark
Igbt Single Transistor, 160 A, 2.6 V, 250 W, 600 V, To-264, 3 Rohs Compliant: Yes
***ource
Discrete, High Performance IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail
***ical
Trans IGBT Chip N=-CH 600V 160A 250000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
SGL160N60UFD Series 600 V 160 A Flange Mount Ultra-Fast IGBT -TO-264
***nell
IGBT, ULTRAFAST, 600V, 160A, TO-264; DC Collector Current: 160A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
***ical
Trans IGBT Chip N-CH 1200V 64A 500000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL40N120AND Series 1200 V 64 A Flange Mount NPT IGBT - TO-264
***nell
IGBT,N CH,FAST,W/DIO,1200V,64A,TO264; Transistor Type: IGBT; DC Collector Current: 64A; Collector Emitter Voltage Vces: 1.2kV; Power Dissipation Pd: 500W; Collector Emitter Voltage V(br)ceo: 1.2kV; Operating Temperature Range
***rchild Semiconductor
Employing NPT technology, Fairchild's AN series of IGBT provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
***ical
Trans IGBT Chip N=-CH 1200V 70A 368000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL35N120FTD Series 1200 V 35 A Field Stop Trench IGBT - TO-264 3L
***rchild Semiconductor
Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder applications.
Parte # Mfg. Descripción Valores Precio
FGL60N100BNTD
DISTI # V99:2348_06359681		ON SemiconductorTrans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube145
  • 750:$3.4731
  • 1125:$3.4731
  • 375:$3.5440
  • 10:$4.1060
  • 1:$4.5110
FGL60N100BNTD
DISTI # FGL60N100BNTDFS-ND		ON SemiconductorIGBT 1000V 60A 180W TO264
RoHS: Compliant
Min Qty: 1
Container: Tube		72In Stock
  • 1125:$3.6719
  • 750:$4.3187
  • 375:$4.7913
  • 10:$6.1100
  • 1:$6.7800
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU-ND		ON SemiconductorIGBT 1000V 60A 180W TO264
RoHS: Compliant
Min Qty: 375
Container: Tube		Limited Supply - Call
  • 375:$3.5235
FGL60N100BNTD
DISTI # 31599406		ON SemiconductorTrans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube155
  • 5:$4.6368
FGL60N100BNTD
DISTI # 31035706		ON SemiconductorTrans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube145
  • 10:$4.9910
  • 3:$5.4740
FGL60N100BNTD
DISTI # FGL60N100BNTD		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail (Alt: FGL60N100BNTD)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€3.1900
  • 10:€2.8900
  • 25:€2.7900
  • 50:€2.6900
  • 100:€2.5900
  • 500:€2.4900
  • 1000:€2.2900
FGL60N100BNTD
DISTI # FGL60N100BNTD		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail - Rail/Tube (Alt: FGL60N100BNTD)
RoHS: Compliant
Min Qty: 375
Container: Tube		Americas - 0
  • 375:$4.2900
  • 750:$4.2900
  • 1500:$4.2900
  • 2250:$4.2900
  • 3750:$4.2900
FGL60N100BNTD
DISTI # 09J6255		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail - Bulk (Alt: 09J6255)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$4.8300
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail (Alt: FGL60N100BNTDTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€2.2900
  • 10:€2.1900
  • 25:€2.0900
  • 50:€1.9900
  • 100:€1.9900
  • 500:€1.8900
  • 1000:€1.8900
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail - Rail/Tube (Alt: FGL60N100BNTDTU)
RoHS: Compliant
Min Qty: 375
Container: Tube		Americas - 0
  • 375:$4.4900
  • 750:$4.4900
  • 1500:$4.3900
  • 2250:$4.3900
  • 3750:$4.2900
FGL60N100BNTD
DISTI # 09J6255		ON SemiconductorIGBT, SINGLE, N-CH, 1KV, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:180W,Collector Emitter Voltage V(br)ceo:1kV,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes212
  • 1:$5.0300
FGL60N100BNTDTU
DISTI # 60J0636		ON SemiconductorTRANSISTOR,IGBT,N-CHAN+DIODE,1kV V(BR)CES,42A I(C),TO-264 RoHS Compliant: Yes0
  • 500:$2.3600
  • 250:$2.4300
  • 100:$2.9100
  • 50:$3.3600
  • 25:$3.5800
  • 10:$4.0900
  • 1:$4.7200
FGL60N100BNTDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-264AA
RoHS: Compliant		25
  • 1000:$2.5100
  • 500:$2.6500
  • 100:$2.7500
  • 25:$2.8700
  • 1:$3.0900
FGL60N100BNTD
DISTI # 512-FGL60N100BNTD		ON SemiconductorIGBT Transistors HIGH POWER
RoHS: Compliant		0
    FGL60N100BNTDTU
    DISTI # 512-FGL60N100BNTDTU    		ON SemiconductorIGBT Transistors HIGH POWER
    RoHS: Compliant    		0
      FGL60N100BNTD
      DISTI # FGL60N100BNTD      		ON SemiconductorTransistor: IGBT,1kV,42A,72W,TO264121
      • 1:$5.6500
      • 3:$4.8600
      • 10:$3.9000
      • 25:$3.3900
      FGL60N100BNTD
      DISTI # 1095037      		ON SemiconductorIGBT, NPT, TO-264
      RoHS: Compliant      		0
      • 500:£2.5300
      • 250:£2.6100
      • 100:£3.6700
      • 10:£4.7200
      • 1:£5.7700
      FGL60N100BNTD
      DISTI # XSFP00000156156      		Fairchild Semiconductor Corporation 
      RoHS: Compliant      		1125
      • 1125:$6.2400
      • 375:$6.8600
      FGL60N100BNTDTU
      DISTI # XSFP00000166970      		Fairchild Semiconductor Corporation 
      RoHS: Compliant      		9750
      • 9750:$4.8400
      • 375:$5.3200
      FGL60N100BNTD
      DISTI # 1095037      		ON SemiconductorIGBT, NPT, TO-264
      RoHS: Compliant      		0
      • 1125:$5.5600
      • 750:$6.5900
      • 375:$7.3400
      • 10:$9.4400
      • 1:$10.5000
      Imagen Parte # Descripción
      MGJ2D051509SC

      Mfr.#: MGJ2D051509SC

      OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

      		 Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
      Disponibilidad
      Valores:
      Available
      En orden:
      1000
      Ingrese la cantidad:
      El precio actual de FGL60N100BNTD es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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