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TC58NVG1S3HBAI6

TC58NVG1S3HBAI6
Mfr. #:
TC58NVG1S3HBAI6
Fabricante:
Toshiba Memory
Descripción:
EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
TC58NVG1S3HBAI6 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
TC58NVG1S3HBAI6 más información
Atributo del producto
Valor de atributo
Fabricante
Toshiba Semiconductor y almacenamiento
categoria de producto
Memoria
Serie
-
embalaje
Bandeja
Paquete-Estuche
67-VFBGA
Temperatura de funcionamiento
-40°C ~ 85°C (TA)
Interfaz
Parallel
Suministro de voltaje
2.7 V ~ 3.6 V
Paquete de dispositivo de proveedor
67-VFBGA (6.5x8)
Tamaño de la memoria
2G (256M x 8)
Tipo de memoria
EEPROM - NAND
Velocidad
25ns
Formato de memoria
EEPROM - Serie
Tags
TC58NVG1S3HBAI6, TC58NVG1S3HB, TC58NVG1S3H, TC58NVG1S, TC58NVG1, TC58NVG, TC58NV, TC58N, TC58, TC5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    D***t
    D***t
    FR

    perfect item thank you

    2019-07-05
    A***y
    A***y
    RU

    The order came very quickly. Thank you.

    2019-08-01
    Y***v
    Y***v
    RU

    Excellent quality

    2019-06-14
    L***o
    L***o
    IT

    perfect

    2019-06-04
*** Source Electronics
NAND Flash Memory(SLC Middle Capacity) | IC FLASH 2G PARALLEL 67VFBGA
***ical
NAND Flash Serial 3.3V 2G-bit 256M x 8 67-Pin VFBGA
***et
2Gbit, generation: 24nm, VCC=2.7 to 3.6V
SLC NAND and BENAND
Toshiba SLC NAND and BENAND provide best-in-class endurance and data retention for sensitive or frequently used system data. Toshiba SLC are the optimal solution for long lasting products or systems working with extremely high data throughput between the host and the memory. 
Parte # Mfg. Descripción Valores Precio
TC58NVG1S3HBAI6
DISTI # TC58NVG1S3HBAI6-ND		Toshiba Semiconductor and Storage ProductsIC FLASH 2G PARALLEL 67VFBGA
RoHS: Compliant
Min Qty: 1
Container: Tray		338In Stock
  • 1014:$2.8496
  • 676:$2.9973
  • 338:$3.1119
  • 100:$3.1235
  • 50:$3.4830
  • 25:$3.5024
  • 10:$3.5800
  • 1:$3.9500
TC58NVG1S3HBAI6
DISTI # TC58NVG1S3HBAI6		Toshiba America Electronic Components2Gbit, generation: 24nm, VCC=2.7 to 3.6V - Trays (Alt: TC58NVG1S3HBAI6)
RoHS: Compliant
Min Qty: 1
Container: Tray		Americas - 113
  • 1:$2.4900
  • 10:$2.3900
  • 25:$2.3900
  • 50:$2.2900
  • 100:$2.1900
  • 500:$2.1900
  • 1000:$2.0900
TC58NVG1S3HBAI6JDH
DISTI # TC58NVG1S3HBAI6JDH		Toshiba America Electronic ComponentsEEPROM Serial 2G-bit 256M x 8 3.3V 67-Pin VFBGA (Alt: TC58NVG1S3HBAI6JDH)
RoHS: Compliant
Min Qty: 1		Europe - 328
  • 1:€2.0900
  • 10:€1.8900
  • 25:€1.7900
  • 50:€1.6900
  • 100:€1.6900
  • 500:€1.5900
  • 1000:€1.4900
TC58NVG1S3HBAI6
DISTI # 757-TC58NVG1S3HBAI6		Toshiba America Electronic ComponentsNAND Flash 3.3V 2Gb 24nm SLC NAND (EEPROM)
RoHS: Compliant		169
  • 1:$3.7600
  • 10:$3.4200
  • 50:$3.3200
  • 100:$2.9800
  • 250:$2.9700
  • 500:$2.8600
  • 1000:$2.7200
  • 2500:$2.6900
Imagen Parte # Descripción
TC58NVG1S3HBAI4

Mfr.#: TC58NVG1S3HBAI4

OMO.#: OMO-TC58NVG1S3HBAI4

 NAND Flash 3.3V 2Gb 24nm SLC NAND (EEPROM)
TC58NVG2S3ETA00

Mfr.#: TC58NVG2S3ETA00

OMO.#: OMO-TC58NVG2S3ETA00

 NAND Flash 3.3V 4Gb 43nm SLC NAND (EEPROM)
TC58NVG0S3ETA00BBH

Mfr.#: TC58NVG0S3ETA00BBH

OMO.#: OMO-TC58NVG0S3ETA00BBH-1190

 Nuevo y original
TC58NVG0S3ETA0B

Mfr.#: TC58NVG0S3ETA0B

OMO.#: OMO-TC58NVG0S3ETA0B-1190

 Nuevo y original
TC58NVG2S0HBAI6JDH

Mfr.#: TC58NVG2S0HBAI6JDH

OMO.#: OMO-TC58NVG2S0HBAI6JDH-1190

 Nuevo y original
TC58NVG1S3ETA00

Mfr.#: TC58NVG1S3ETA00

OMO.#: OMO-TC58NVG1S3ETA00-TOSHIBA-MEMORY-AMERICA

 Flash Memory 1Gb 3.3V SLC NAND Flash Serial EEPROM
TC58NVG2S3EBAI5

Mfr.#: TC58NVG2S3EBAI5

OMO.#: OMO-TC58NVG2S3EBAI5-1151

 Flash Memory 4Gb 3.3V SLC NAND Flash Memory EEPROM
TC58NVG3S0FBAID

Mfr.#: TC58NVG3S0FBAID

OMO.#: OMO-TC58NVG3S0FBAID-1151

 Flash Memory 8Gb SLC NAND Flash Memory EEPROM
TC58NVG2S0FTA00-ND

Mfr.#: TC58NVG2S0FTA00-ND

OMO.#: OMO-TC58NVG2S0FTA00-ND-1190

 Nuevo y original
TC58NVG3S0FTA00-ND

Mfr.#: TC58NVG3S0FTA00-ND

OMO.#: OMO-TC58NVG3S0FTA00-ND-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de TC58NVG1S3HBAI6 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,84 US$
2,84 US$
10
2,69 US$
26,93 US$
100
2,55 US$
255,15 US$
500
2,41 US$
1 204,90 US$
1000
2,27 US$
2 268,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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