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PGA26E19BA

PGA26E19BA
Mfr. #:
PGA26E19BA
Fabricante:
Panasonic
Descripción:
MOSFET MOSFET 600VDC 190mohm X-GaN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
PGA26E19BA Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
PGA26E19BA más información
Atributo del producto
Valor de atributo
Fabricante
Panasonic
categoria de producto
Transistores - FET, MOSFET - Sencillo
RoHS
Detalles
número de canales
1 Channel
Vgs th - Tensión umbral puerta-fuente
4 V
Qg - Carga de puerta
120 nC
Tecnología
Si
Modo de canal
Mejora
Marca
Panasonic
Configuración
1 N-Channel
Kit de desarrollo
-
Otoño
-
Transconductancia directa - Mín.
-
Temperatura mínima de funcionamiento
- 55 C
Hora de levantarse
-
Serie
GaN-FET
Tipo de transistor
1 N-Channel
Tiempo de retardo de apagado típico
-
Tiempo de retardo de encendido típico
-
Tags
PGA26E1, PGA26, PGA2, PGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***asonic SCT
GaN Power Devices, 600V, DFN 8x8, RoHS
PGA26E X-GaN Power Transistors
Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss.
X-GaN Power Solutions
Panasonic 600V Gallium Nitride (X-GaN) is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form, it resists cracking and can be deposited in a thin film on Sapphire (AL2O3) or Silicon Carbide (SiC), despite the mismatch in their lattice constants. X-GaN can be doped with Silicon (Si) or with Oxygen to n-type and with Magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the X-GaN crystals grow, introducing tensile stresses and making them brittle.
Parte # Mfg. Descripción Valores Precio
PGA26E19BA
DISTI # 667-PGA26E19BA		Panasonic Electronic ComponentsMOSFET MOSFET 600VDC 190mohm X-GaN
RoHS: Compliant		0
  • 1:$18.2900
  • 10:$17.0700
  • 25:$16.2100
PGA26E19BA-SWEVB008
DISTI # 667-PGA26E19BASWEV8		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 190mOhm X-GaN 1/2 Bridge EVB
RoHS: Compliant		19
  • 1:$400.0000
PGA26E19BA-SWEVB006
DISTI # 667-PGA26E19BASWEVB6		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 190mOhm X-GaN Chopper EVB
RoHS: Compliant		3
  • 1:$300.0000
PGA26E19BA-DB001
DISTI # 667-PGA26E19BADB001		Panasonic Electronic ComponentsPower Management IC Development Tools SMD-ThruHole ConvKit 600VDC 190mohm X-GaN
RoHS: Compliant		0
  • 1:$45.0000
Imagen Parte # Descripción
PGA26E19BA

Mfr.#: PGA26E19BA

OMO.#: OMO-PGA26E19BA

 MOSFET MOSFET 600VDC 190mohm X-GaN
PGA26E07BA

Mfr.#: PGA26E07BA

OMO.#: OMO-PGA26E07BA

 MOSFET MOSFET 600VDC 70mohm X-GaN
PGA26E07-DB001

Mfr.#: PGA26E07-DB001

OMO.#: OMO-PGA26E07-DB001-1190

 Nuevo y original
PGA26E07-SWEVB008

Mfr.#: PGA26E07-SWEVB008

OMO.#: OMO-PGA26E07-SWEVB008-1190

 Nuevo y original
PGA26E07BA

Mfr.#: PGA26E07BA

OMO.#: OMO-PGA26E07BA-1190

 MOSFET MOSFET 600VDC 70mohm X-GaN
PGA26E19-DB001

Mfr.#: PGA26E19-DB001

OMO.#: OMO-PGA26E19-DB001-1190

 Nuevo y original
PGA26E19-SWEVB008

Mfr.#: PGA26E19-SWEVB008

OMO.#: OMO-PGA26E19-SWEVB008-1190

 Nuevo y original
PGA26E19BA

Mfr.#: PGA26E19BA

OMO.#: OMO-PGA26E19BA-1190

 MOSFET MOSFET 600VDC 190mohm X-GaN
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de PGA26E19BA es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
24,32 US$
24,32 US$
10
23,10 US$
230,99 US$
100
21,88 US$
2 188,35 US$
500
20,67 US$
10 333,90 US$
1000
19,45 US$
19 452,00 US$
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