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NSBA113EDXV6T1G

NSBA113EDXV6T1G
Mfr. #:
NSBA113EDXV6T1G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NSBA113EDXV6T1G Ficha de datos
Entrega:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
EN Semiconductor
categoria de producto
Transistores (BJT): matrices, pre-polarizadas
Serie
NSBA113EDXV6
embalaje
Tape & Reel (TR)
Unidad de peso
0.000289 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
6-TSSOP, SC-88, SOT-363
Tipo de montaje
Montaje superficial
Paquete de dispositivo de proveedor
SC-88/SC70-6/SOT-363
Configuración
Doble
Potencia máxima
250mW
Tipo transistor
2 PNP - Pre-Biased (Dual)
Colector-corriente-Ic-Max
100mA
Voltaje-Colector-Emisor-Ruptura-Máx.
50V
Resistencia-Base-R1-Ohms
1k
Resistencia-Emisor-Base-R2-Ohms
1k
DC-Current-Gain-hFE-Min-Ic-Vce
3 @ 5mA, 10V
Vce-Saturación-Max-Ib-Ic
250mV @ 5mA, 10mA
Recolector-actual-Corte-Máx.
500nA
Transición de frecuencia
-
Disipación de potencia Pd
357 mW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Colector-Emisor-Voltaje-VCEO-Max
50 V
Polaridad del transistor
PNP
Corriente continua de colector
- 100 mA
DC-Collector-Base-Gain-hfe-Min
3
Resistencia de entrada típica
1 kOhms
Relación de resistencia típica
1
Corriente de colector de CC pico
100 mA
Tags
NSBA113, NSBA11, NSBA1, NSBA, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
50V Dual PNP Bipolar Digital Transistor
***et
Trans Digital BJT PNP 50V 0.1A 6-Pin SOT-363 T/R
***ark
Brt Transistor, 50V, 1K/1Kohm, Sot-563-6; Digital Transistor Polarity:dual Pnp; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:1Kohm; Base-Emitter Resistor R2:1Kohm Rohs Compliant: Yes
Parte # Mfg. Descripción Valores Precio
NSBA113EDXV6T1G
DISTI # NSBA113EDXV6T1G-ND		ON SemiconductorTRANS 2PNP PREBIAS 0.25W SOT563
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.1040
NSBA113EDXV6T1G
DISTI # NSBA113EDXV6T1G		ON SemiconductorTrans Digital BJT PNP 50V 0.1A 6-Pin SOT-363 T/R - Tape and Reel (Alt: NSBA113EDXV6T1G)
RoHS: Compliant
Min Qty: 8000
Container: Reel		Americas - 0
  • 80000:$0.0739
  • 40000:$0.0749
  • 24000:$0.0759
  • 16000:$0.0769
  • 8000:$0.0779
NSBA113EDXV6T1G
DISTI # 49X8909		ON SemiconductorBRT TRANSISTOR, 50V, 1K/1KOHM, SOT-563-6,Digital Transistor Polarity:Dual PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:1kohm,Base-Emitter Resistor R2:1kohm RoHS Compliant: Yes0
  • 2500:$0.1070
  • 1000:$0.1260
  • 500:$0.1550
  • 250:$0.1820
  • 100:$0.2160
  • 50:$0.2580
  • 25:$0.3090
  • 1:$0.4030
NSBA113EDXV6T1G
DISTI # 42K2293		ON SemiconductorBRT TRANSISTOR, 50V, 1K/1KOHM, SOT-563-6,Digital Transistor Polarity:Dual PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:1kohm,Base-Emitter Resistor R2:1kohm RoHS Compliant: Yes0
  • 30000:$0.0780
  • 18000:$0.0860
  • 12000:$0.0930
  • 6000:$0.1040
  • 3000:$0.1190
  • 1:$0.1260
NSBA113EDXV6T1G
DISTI # 863-NSBA113EDXV6T1G		ON SemiconductorBipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
RoHS: Compliant		0
  • 1:$0.3500
  • 10:$0.2660
  • 100:$0.1440
  • 1000:$0.1080
  • 4000:$0.0930
  • 8000:$0.0870
  • 24000:$0.0800
  • 48000:$0.0770
  • 100000:$0.0740
Imagen Parte # Descripción
NSBA113EF3T5G

Mfr.#: NSBA113EF3T5G

OMO.#: OMO-NSBA113EF3T5G

 Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR (B
NSBA113EDXV6T1G

Mfr.#: NSBA113EDXV6T1G

OMO.#: OMO-NSBA113EDXV6T1G

 Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
NSBA113EDXV6T1

Mfr.#: NSBA113EDXV6T1

OMO.#: OMO-NSBA113EDXV6T1-ON-SEMICONDUCTOR

 TRANS 2PNP PREBIAS 0.5W SOT563
NSBA113EDXV6T1G

Mfr.#: NSBA113EDXV6T1G

OMO.#: OMO-NSBA113EDXV6T1G-ON-SEMICONDUCTOR

 Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
NSBA113EF3T5G

Mfr.#: NSBA113EF3T5G

OMO.#: OMO-NSBA113EF3T5G-ON-SEMICONDUCTOR

 Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR (B
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de NSBA113EDXV6T1G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,11 US$
0,11 US$
10
0,11 US$
1,05 US$
100
0,10 US$
9,98 US$
500
0,09 US$
47,10 US$
1000
0,09 US$
88,70 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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