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FDA59N25

FDA59N25
Mfr. #:
FDA59N25
Fabricante:
ON Semiconductor
Descripción:
MOSFET N-CH 250V 59A TO-3P
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDA59N25 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
FCS
categoria de producto
FET - Single
embalaje
Tubo
Unidad de peso
0.225789 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-3P-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
392 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
170 ns
Hora de levantarse
480 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
59 A
Vds-Drain-Source-Breakdown-Voltage
250 V
Resistencia a la fuente de desagüe de Rds
49 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
90 ns
Tiempo de retardo de encendido típico
70 ns
Transconductancia directa-Mín.
45 S
Modo de canal
Mejora
Tags
FDA59, FDA5, FDA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, UniFETTM, 250V, 59A, 49mΩ, TO-3P
***ure Electronics
Single N-Channel 250 V 0.049 Ohm 82 nC 392 W Silicon Flange Mount Mosfet TO-3PN
***ment14 APAC
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:250V; On Resistance Rds(on):49mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:392W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:59A; Package / Case:TO-3P; Power Dissipation Pd:392W; Power Dissipation Pd:392W; Pulse Current Idm:236A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Parte # Mfg. Descripción Valores Precio
FDA59N25
DISTI # V99:2348_06359684		ON Semiconductor250V N-CHANNEL MOSFET156
  • 2500:$1.1950
  • 1000:$1.3210
  • 500:$1.7170
  • 250:$1.8820
  • 100:$1.9650
  • 10:$2.2050
  • 1:$2.4990
FDA59N25
DISTI # FDA59N25-ND		ON SemiconductorMOSFET N-CH 250V 59A TO-3P
RoHS: Compliant
Min Qty: 1
Container: Tube		714In Stock
  • 1350:$1.8567
  • 900:$1.9805
  • 450:$2.4138
  • 10:$3.2190
  • 1:$3.5900
FDA59N25
DISTI # 29731014		ON Semiconductor250V N-CHANNEL MOSFET450
  • 1000:$1.3344
  • 500:$1.4304
  • 450:$1.6224
FDA59N25
DISTI # 29512794		ON Semiconductor250V N-CHANNEL MOSFET156
  • 250:$1.8820
  • 100:$1.9650
  • 10:$2.2050
  • 5:$2.4990
FDA59N25
DISTI # FDA59N25		ON SemiconductorTrans MOSFET N-CH 250V 59A 3-Pin TO-3PN Tube (Alt: FDA59N25)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.7900
  • 10:€1.4900
  • 25:€1.2900
  • 50:€1.2900
  • 100:€1.2900
  • 500:€1.1900
  • 1000:€1.1900
FDA59N25
DISTI # FDA59N25		ON SemiconductorTrans MOSFET N-CH 250V 59A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FDA59N25)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 0
  • 1:$1.2900
  • 10:$1.2900
  • 25:$1.2900
  • 50:$1.2900
  • 100:$1.2900
  • 500:$1.1900
  • 1000:$1.1900
FDA59N25
DISTI # 04M9075		ON SemiconductorMOSFET, N, TO-3P,Transistor Polarity:N Channel,Continuous Drain Current Id:59A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.049ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:392W,MSL:-RoHS Compliant: Yes117
  • 1:$3.1600
  • 10:$2.7100
  • 25:$2.6000
  • 50:$2.4800
  • 100:$2.3600
  • 250:$2.2500
  • 500:$2.0300
FDA59N25
DISTI # 512-FDA59N25		ON SemiconductorMOSFET 250V N-Ch MOSFET
RoHS: Compliant		695
  • 1:$2.9800
  • 10:$2.5400
  • 100:$2.2000
  • 250:$2.0900
  • 500:$1.8700
  • 1000:$1.5800
  • 2500:$1.5000
  • 5000:$1.4500
FDA59N25
DISTI # 1228352		ON SemiconductorMOSFET, N, TO-3P
RoHS: Compliant		118
  • 1:£2.5700
  • 10:£1.9400
  • 100:£1.6800
  • 250:£1.6000
  • 500:£1.4300
FDA59N25
DISTI # C1S541901645850		ON SemiconductorMOSFETs
RoHS: Compliant		156
  • 100:$1.9650
  • 10:$2.2050
  • 1:$2.4990
FDA59N25
DISTI # C1S541901387868		ON SemiconductorTrans MOSFET N-CH 250V 59A 3-Pin(3+Tab) TO-3PN Tube
RoHS: Compliant		690
  • 450:$2.2300
FDA59N25
DISTI # 1228352		ON SemiconductorMOSFET, N, TO-3P
RoHS: Compliant		117
  • 1:$4.7200
  • 10:$4.0300
  • 100:$3.4900
  • 250:$3.3100
  • 500:$2.9700
  • 1000:$2.5000
  • 2500:$2.3800
  • 5000:$2.3000
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OMO.#: OMO-FDA59N30-59N30-1190

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Mfr.#: FDA59N30,FDA50N50

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Mfr.#: FDA59N30,FDA50N50,FDA59N

OMO.#: OMO-FDA59N30-FDA50N50-FDA59N-1190

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Mfr.#: FDA59N30/

OMO.#: OMO-FDA59N30--1190

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FDA59N30LDTU

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OMO.#: OMO-FDA59N30LDTU-1190

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Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de FDA59N25 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,78 US$
1,78 US$
10
1,70 US$
16,96 US$
100
1,61 US$
160,65 US$
500
1,52 US$
758,65 US$
1000
1,43 US$
1 428,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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