BFR 183 E6327

BFR 183 E6327
Mfr. #:
BFR 183 E6327
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BFR 183 E6327 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
BFR 183 E6327 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores bipolares de RF
RoHS:
Y
Serie:
BFR183
Tipo de transistor:
Bipolar
Tecnología:
Si
Polaridad del transistor:
NPN
Voltaje colector-emisor VCEO Max:
12 V
Emisor- Voltaje base VEBO:
2 V
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 150 C
Configuración:
Único
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-23
Embalaje:
Carrete
Colector- Voltaje base VCBO:
20 V
Ganancia de corriente CC hFE Max:
70 at 15 mA at 8 V
Altura:
1 mm
Longitud:
2.9 mm
Frecuencia de operación:
8000 MHz
Escribe:
Señal pequeña bipolar RF
Ancho:
1.3 mm
Marca:
Infineon Technologies
Corriente máxima del colector de CC:
0.065 A
Pd - Disipación de energía:
450 mW
Tipo de producto:
Transistores bipolares de RF
Cantidad de paquete de fábrica:
3000
Subcategoría:
Transistores
Parte # Alias:
BFR183E6327HTSA1 BFR183E6327XT SP000011054
Unidad de peso:
0.000282 oz
Tags
BFR183E, BFR183, BFR18, BFR1, BFR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF Transistors
Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.
Parte # Mfg. Descripción Valores Precio
BFR183E6327HTSA1
DISTI # BFR183E6327HTSA1CT-ND
Infineon Technologies AGRF TRANS NPN 12V 8GHZ SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
11781In Stock
  • 1000:$0.1094
  • 500:$0.1394
  • 100:$0.1993
  • 10:$0.3140
  • 1:$0.4100
BFR183E6327HTSA1
DISTI # BFR183E6327HTSA1DKR-ND
Infineon Technologies AGRF TRANS NPN 12V 8GHZ SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
11781In Stock
  • 1000:$0.1094
  • 500:$0.1394
  • 100:$0.1993
  • 10:$0.3140
  • 1:$0.4100
BFR183E6327HTSA1
DISTI # BFR183E6327HTSA1TR-ND
Infineon Technologies AGRF TRANS NPN 12V 8GHZ SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
9000In Stock
  • 150000:$0.0698
  • 75000:$0.0723
  • 30000:$0.0795
  • 15000:$0.0844
  • 6000:$0.0917
  • 3000:$0.0965
BFR 183 E6327
DISTI # BFR 183 E6327
Infineon Technologies AGTrans GP BJT NPN 12V 0.065A 3-Pin SOT-23 T/R (Alt: BFR 183 E6327)
RoHS: Compliant
Min Qty: 9000
Container: Tape and Reel
Asia - 0
  • 9000:$0.0693
  • 18000:$0.0674
  • 27000:$0.0655
  • 45000:$0.0638
  • 90000:$0.0630
  • 225000:$0.0622
  • 450000:$0.0614
BFR 183 E6327
DISTI # SP000011054
Infineon Technologies AGTrans GP BJT NPN 12V 0.065A 3-Pin SOT-23 T/R (Alt: SP000011054)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.1219
  • 6000:€0.0949
  • 12000:€0.0779
  • 18000:€0.0659
  • 30000:€0.0609
BFR 183 E6327
DISTI # SP000011054
Infineon Technologies AGTrans GP BJT NPN 12V 0.065A 3-Pin SOT-23 T/R (Alt: SP000011054)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.1139
  • 6000:€0.0979
  • 12000:€0.0829
  • 18000:€0.0709
  • 30000:€0.0679
BFR183E6327HTSA1
DISTI # BFR183E6327HTSA1
Infineon Technologies AGTrans GP BJT NPN 12V 0.065A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BFR183E6327HTSA1)
RoHS: Compliant
Min Qty: 9000
Container: Reel
Americas - 0
  • 9000:$0.0689
  • 15000:$0.0669
  • 24000:$0.0639
  • 45000:$0.0619
  • 90000:$0.0609
BFR183E6327HTSA1
DISTI # 97Y1218
Infineon Technologies AGTRANSISTOR, RF, AEC-Q101, NPN, SOT-23-3,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:12V,Transition Frequency ft:8GHz,Power Dissipation Pd:450mW,DC Collector Current:65mA,DC Current Gain hFE:100hFE,RF Transistor RoHS Compliant: Yes723
  • 1000:$0.0970
  • 500:$0.1070
  • 250:$0.1170
  • 100:$0.1270
  • 50:$0.1760
  • 25:$0.2260
  • 10:$0.2750
  • 1:$0.4000
BFR 183 E6327
DISTI # 726-BFR183E6327
Infineon Technologies AGRF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW
RoHS: Compliant
8157
  • 1:$0.3900
  • 10:$0.2750
  • 100:$0.1270
  • 1000:$0.0970
  • 3000:$0.0830
  • 9000:$0.0760
  • 24000:$0.0710
BFR183E6327HTSA1
DISTI # 726-BFR183E6327HTSA1
Infineon Technologies AGRF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW
RoHS: Compliant
8680
  • 1:$0.3900
  • 10:$0.2750
  • 100:$0.1270
  • 1000:$0.0970
  • 3000:$0.0830
  • 9000:$0.0760
  • 24000:$0.0710
BFR183E6327Infineon Technologies AGRF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
RoHS: Compliant
37800
  • 100:$0.0700
  • 500:$0.0700
  • 1000:$0.0700
  • 1:$0.0800
  • 25:$0.0800
BFR183E6327HTSA1Infineon Technologies AGRF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
RoHS: Compliant
9000
  • 500:$0.0800
  • 1000:$0.0800
  • 25:$0.0900
  • 100:$0.0900
  • 1:$0.1000
BFR183E6327HTSA1
DISTI # 8922245P
Infineon Technologies AGRF TRANSISTOR BJT NPN 12V 0.065A SOT23, RL300
  • 6250:£0.0620
  • 2500:£0.0690
  • 1250:£0.0750
  • 250:£0.0970
BFR183E6327Infineon Technologies AG 11896
    BFR183E6327Infineon Technologies AG 7455
      BFR183E6327Infineon Technologies AG12V,65mA,Bipolar RF NPN Transistor7200
      • 1:$0.1200
      • 100:$0.1000
      • 500:$0.0900
      • 1000:$0.0900
      BFR183E6327HTSA1
      DISTI # 2617468
      Infineon Technologies AGTRANSISTOR, RF, AEC-Q101, NPN, SOT-23-3
      RoHS: Compliant
      723
      • 3000:$0.1320
      • 1000:$0.1540
      • 100:$0.2010
      • 10:$0.4350
      • 1:$0.6340
      BFR183E6327HTSA1
      DISTI # 2617468
      Infineon Technologies AGTRANSISTOR, RF, AEC-Q101, NPN, SOT-23-3
      RoHS: Compliant
      748
      • 500:£0.0811
      • 250:£0.0979
      • 100:£0.1030
      • 25:£0.2330
      • 5:£0.2420
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      Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      1991
      Ingrese la cantidad:
      El precio actual de BFR 183 E6327 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,39 US$
      0,39 US$
      10
      0,28 US$
      2,75 US$
      100
      0,13 US$
      12,70 US$
      1000
      0,10 US$
      97,00 US$
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