We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SIA417DJ-T1-GE3 DISTI # SIA417DJ-T1-GE3TR-ND | Vishay Siliconix | MOSFET P-CH 8V 12A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SIA417DJ-T1-GE3 DISTI # SIA417DJ-T1-GE3CT-ND | Vishay Siliconix | MOSFET P-CH 8V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SIA417DJ-T1-GE3 DISTI # SIA417DJ-T1-GE3DKR-ND | Vishay Siliconix | MOSFET P-CH 8V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SIA417DJ-T1-GE3 DISTI # 781-SIA417DJ-T1-GE3 | Vishay Intertechnologies | MOSFET 8.0V 12A 19W 23mohm @ 4.5V RoHS: Compliant | 0 | |
| SIA417DJ-T1-GE3 | Vishay Siliconix | POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 8V, 0.023OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2895 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: SIA417DJ-T1-GE3 OMO.#: OMO-SIA417DJ-T1-GE3 |
MOSFET RECOMMENDED ALT 78-SIA427ADJ-T1-GE3 |
|
Mfr.#: SIA417DJ-T1-GE3 OMO.#: OMO-SIA417DJ-T1-GE3-VISHAY |
IGBT Transistors MOSFET 8.0V 12A 19W 23mohm @ 4.5V |
|
Mfr.#: SIA417DJ-T1 OMO.#: OMO-SIA417DJ-T1-1190 |
Nuevo y original |
|
|
Mfr.#: SIA417DJ-T1-E3 OMO.#: OMO-SIA417DJ-T1-E3-1190 |
MOSFET RECOMMENDED ALT 78-SIA427ADJ-T1-GE3 |
