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DMN3730U-7

DMN3730U-7
Mfr. #:
DMN3730U-7
Fabricante:
Diodes Incorporated
Descripción:
MOSFET MOSFET BVDSS: 25V-30 SOT23,3K
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
DMN3730U-7 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DMN3730U-7 DatasheetDMN3730U-7 Datasheet (P4-P6)DMN3730U-7 Datasheet (P7)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Diodos incorporados
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-23-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
940 mA
Rds On - Resistencia de la fuente de drenaje:
460 mOhms
Vgs th - Voltaje umbral puerta-fuente:
450 mV
Vgs - Voltaje puerta-fuente:
4.5 V
Qg - Carga de puerta:
1.6 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
0.71 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
DMN37
Tipo de transistor:
1 N-Channel
Marca:
Diodos incorporados
Otoño:
13 ns
Tipo de producto:
MOSFET
Hora de levantarse:
2.8 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
38 ns
Tiempo típico de retardo de encendido:
3.5 ns
Unidad de peso:
0.000282 oz
Tags
DMN3730U, DMN3730, DMN37, DMN3, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 30 V 460 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
***ical
Trans MOSFET N-CH 30V 0.94A Automotive 3-Pin SOT-23 T/R
***nell
MOSFET, N-CH, 30V, 0.75A, SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 750mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.46ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 950mV; Power Dissipation Pd: 710mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***Yang
Trans MOSFET N-CH 25V 0.68A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
***enic
25V 680mA 450m¦¸@4.5V,500mA 350mW 1.5V@250¦ÌA N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***et Europe
Trans MOSFET N-CH 25V 0.68A 3-Pin SOT-23 T/R
***ure Electronics
N-Channel 25 V 0.45 Ohm Surface Mount Digital FET - SOT-23-3
***nell
MOSFET, N DIGITAL SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 680mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 2.7V; Threshold Voltage Vgs: -; Power Dissip
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 680 / Drain-Source Voltage (Vds) V = 25 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Voltage V = 8 / Fall Time ns = 13 / Rise Time ns = 8.5 / Turn-OFF Delay Time ns = 17 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350
***rchild Semiconductor
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
***ure Electronics
ZXM61P03F 30 V 0.35 Ohm P-Channel Enhancement Mode Vertical DMOS FET - SOT-23
***ow.cn
Trans MOSFET P-CH 30V 1.1A 3-Pin SOT-23 T/R
***(Formerly Allied Electronics)
MOSFET P-Channel 30V HDMOS SOT23
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***S
French Electronic Distributor since 1988
***nell
MOSFET, P SOT-23 REEL 3K; Transistor Polarity:P; Max Current Id:-1.1A; Max Voltage Vds:30V; On State Resistance:0.35ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:-20V; Power Dissipation:625mW; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:SOT-23; No. of Pins:3; Case Style:SOT-23; Cont Current Id:1.1A; Current Temperature:25°C; Max Junction Temperature Tj:150°C; Max On State Resistance:0.35ohm; Max Power Dissipation Ptot:625W; Min Junction Temperature, Tj:-55°C; Min Voltage Vgs th:-1V; No. of Transistors:1; Power Dissipation Pd:625W; Pulse Current Idm:4.3A; Reel Quantity:3000; SMD Marking:P03; Tape Width:8mm; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:-30V; Typ Voltage Vgs th:-1V; Voltage Vgs Rds on Measurement:-10V
***ure Electronics
P-Channel 30 V 530 mA 1 Ohm Surface Mount Enhancement Mode Mosfet - SOT-23
***ark
Mosfet, P-Ch, 30V, 0.67A, Sot-23 Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET P-Ch 30V 0.67A Enhancement SOT23
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 8±V VGS
*** Source Electronics
Trans MOSFET P-CH 30V 1.1A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 1.1A SSOT3
***emi
-30V P-Channel Logic Level Enhancement Mode Field Effect Transistor
***nell
MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.6V; Power Dissipatio
***ment14 APAC
MOSFET, P SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):300mohm; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23 (TO-236); Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:NDS356AP; Tape Width:8mm; Termination Type:SMD; Voltage Vgs th Max:-2.5V
***rchild Semiconductor
SuperSOT™-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
***Yang
Trans MOSFET P-CH 25V 0.46A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
***id Electronics
Transistor MOSFET P-Ch. -0,46A/-25V SOT23 FDV 304 P
***enic
25V 460mA 1.1´Î@4.5V500mA 350mW 1.5V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
***ure Electronics
P-Channel 25 V 1.5 Ohm Surface Mount Digital FET - SOT-23-3
***r Electronics
Small Signal Field-Effect Transistor, 0.46A I(D), 25V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
***rchild Semiconductor
This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = -460 / Drain-Source Voltage (Vds) V = -25 / ON Resistance (Rds(on)) Ohm = 1.5 / Gate-Source Voltage V = -8 / Fall Time ns = 35 / Rise Time ns = 8 / Turn-OFF Delay Time ns = 55 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350
***ure Electronics
Si2336DS Series N-Channel 30 V 42 mOhm 1.25 W Surface Mount Mosfet - TO-236
***nsix Microsemi
Small Signal Field-Effect Transistor, 5.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
***ment14 APAC
MOSFET,N CH,30V,5.2A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.034ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.3A; Power Dissipation Pd:1.25W; Voltage Vgs Max:8V
Parte # Mfg. Descripción Valores Precio
DMN3730U-7
DISTI # DMN3730U-7DITR-ND		Diodes IncorporatedMOSFET N-CH 30V 750MA SOT23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.1511
DMN3730U-7
DISTI # DMN3730U-7DICT-ND		Diodes IncorporatedMOSFET N-CH 30V 750MA SOT23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.1684
  • 500:$0.2194
  • 100:$0.3129
  • 10:$0.4480
  • 1:$0.5700
DMN3730U-7
DISTI # DMN3730U-7DIDKR-ND		Diodes IncorporatedMOSFET N-CH 30V 750MA SOT23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.1684
  • 500:$0.2194
  • 100:$0.3129
  • 10:$0.4480
  • 1:$0.5700
DMN3730U-7
DISTI # DMN3730U-7		Diodes IncorporatedTrans MOSFET N-CH 30V 0.94A 3-Pin SOT-23 T/R (Alt: DMN3730U-7)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.1099
  • 6000:€0.0789
  • 12000:€0.0739
  • 18000:€0.0649
  • 30000:€0.0599
DMN3730U-7
DISTI # DMN3730U-7		Diodes IncorporatedTrans MOSFET N-CH 30V 0.94A 3-Pin SOT-23 T/R - Tape and Reel (Alt: DMN3730U-7)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.0859
  • 6000:$0.0819
  • 12000:$0.0779
  • 18000:$0.0739
  • 30000:$0.0729
DMN3730U-7
DISTI # 70550685		Diodes Incorporated30V N-Channel Enhancement MOSFET SOT-23
RoHS: Compliant		0
  • 250:$0.2000
  • 750:$0.1600
  • 1500:$0.1400
  • 3000:$0.1200
DMN3730U-7
DISTI # 621-DMN3730U-7		Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30 SOT23,3K
RoHS: Compliant		110
  • 1:$0.4400
  • 10:$0.3330
  • 100:$0.1800
  • 1000:$0.1350
  • 3000:$0.1170
  • 9000:$0.1090
DMN3730U-7
DISTI # 8232946P		Zetex / Diodes Inc30V N-CHANNEL ENHANCEMENT MOSFET SOT-23, RL3300
  • 150:£0.1230
  • 300:£0.1190
  • 600:£0.1160
  • 1200:£0.1130
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Disponibilidad
Valores:
71
En orden:
2054
Ingrese la cantidad:
El precio actual de DMN3730U-7 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,43 US$
0,43 US$
10
0,33 US$
3,33 US$
100
0,18 US$
18,00 US$
1000
0,14 US$
135,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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