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IS43LR32160C-6BLI

IS43LR32160C-6BLI
Mfr. #:
IS43LR32160C-6BLI
Fabricante:
ISSI
Descripción:
DRAM 512M, 1.8V, 166Mhz Mobile DDR
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IS43LR32160C-6BLI Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IS43LR32160C-6BLI más información
Atributo del producto
Valor de atributo
Fabricante:
ISSI
Categoria de producto:
DRACMA
RoHS:
Y
Escribe:
SDRAM Mobile - LPDDR1
Ancho del bus de datos:
32 bit
Organización:
16 M x 32
Paquete / Caja:
BGA-90
Tamaño de la memoria:
512 Mbit
Frecuencia máxima de reloj:
166 MHz
Tiempo de acceso:
6 ns
Voltaje de suministro - Máx:
1.95 V
Voltaje de suministro - Min:
1.7 V
Corriente de suministro - Máx .:
60 mA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Serie:
IS43LR32160C
Embalaje:
Bandeja
Marca:
ISSI
Estilo de montaje:
SMD / SMT
Sensible a la humedad:
Yes
Voltaje de suministro operativo:
1.8 V
Tipo de producto:
DRACMA
Cantidad de paquete de fábrica:
240
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
RLDRAM2
Unidad de peso:
0.005915 oz
Tags
IS43LR32160C-6BLI, IS43LR32160C, IS43LR3216, IS43LR321, IS43LR3, IS43LR, IS43L, IS43, IS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***a
    A***a
    RU

    Delivery to krasnodar region more than three months, which already strains. Changed the transistor on the trigger button of the screwdriver and everything worked. Now only load and time will show what quality. Good luck to everyone!

    2019-08-13
    D***i
    D***i
    BY

    Thank you to the seller!

    2019-07-02
    R***r
    R***r
    RU

    Very long walked in the russian federation. The seller extended the protection period and expressed concern for what thanks to him.

    2019-09-05
    N***L
    N***L
    US

    Good one

    2019-04-04
***ark
512M, 1.8V, Mobile DDR, 16Mx32, 166Mhz, 90 ball BGA (8Mm x 13mm) RoHS, IT
***et
DRAM Chip Mobile DDR SDRAM 512M-Bit 16M x 32 1.8V 90-Pin TFBGA
***ment14 APAC
SDRAM, DDR3, 512MBIT, 166MHZ, BGA-90
***or
IC DRAM 512MBIT PARALLEL 90TFBGA
***nell
SDRAM, DDR3, 512MBIT, 166MHZ, BGA-90; DRAM Memory Configuration: 16M x 32bit; Memory Case Style: BGA; No. of Pins: 90Pins; IC Interface Type: LVCMOS; Access Time: 6ns; Page Size: -; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (12-Jan-2017); Memory Capacity: 512MB; Memory Type: DRAM
IS43LR16800F 2Mx16 Mobile DDR SDRAM
ISSI IS43LR16800F 2Mx16 Mobile DDR SDRAM is 134,217,728 bits Mobile Double Data Rate (DDR) Synchronous DRAM (SDRAM) organized as 4 banks of 2,097,152 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock.
Mobile DDR SDRAM
ISSI Mobile DDR SDRAM is organized as 4 banks of 16,777,216 words x 16 bits and uses a double-data-rate architecture to achieve high-speed operation. The Data Input/Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. ISSI Mobile DDR SDRAM offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.
Parte # Mfg. Descripción Valores Precio
IS43LR32160C-6BLI
DISTI # 26639726		Integrated Silicon Solution IncDRAM Chip Mobile-DDR SDRAM 512Mbit 16Mx32 1.8V 90-Pin TFBGA
RoHS: Compliant		2640
  • 240:$11.1553
IS43LR32160C-6BLI
DISTI # IS43LR32160C-6BLI-ND		Integrated Silicon Solution IncIC DRAM 512M PARALLEL 90TFBGA
RoHS: Compliant
Min Qty: 240
Container: Tray		Temporarily Out of Stock
  • 240:$8.2871
IS43LR32160C-6BLI-TR
DISTI # IS43LR32160C-6BLI-TR-ND		Integrated Silicon Solution IncIC DRAM 512M PARALLEL 90TFBGA
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$7.2902
IS43LR32160C-6BLI
DISTI # IS43LR32160C-6BLI		Integrated Silicon Solution IncDRAM Chip Mobile DDR SDRAM 512M-Bit 16M x 32 1.8V 90-Pin TFBGA - Bulk (Alt: IS43LR32160C-6BLI)
RoHS: Compliant
Min Qty: 240
Container: Bulk		Americas - 0
  • 240:$7.9900
  • 480:$7.6900
  • 960:$7.3900
  • 1440:$7.0900
  • 2400:$6.8900
IS43LR32160C-6BLI
DISTI # IS43LR32160C-6BLI		Integrated Silicon Solution IncDRAM Chip Mobile DDR SDRAM 512M-Bit 16M x 32 1.8V 90-Pin TFBGA (Alt: IS43LR32160C-6BLI)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€8.8900
  • 10:€8.1900
  • 25:€7.7900
  • 50:€7.4900
  • 100:€7.2900
  • 500:€6.9900
  • 1000:€6.4900
IS43LR32160C-6BLI-TR
DISTI # IS43LR32160C-6BLI-TR		Integrated Silicon Solution IncDRAM Chip Mobile DDR SDRAM 512M-Bit 16M x 32 1.8V 90-Pin TFBGA T/R - Tape and Reel (Alt: IS43LR32160C-6BLI-TR)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$8.0900
  • 5000:$7.7900
  • 10000:$7.4900
  • 15000:$7.1900
  • 25000:$6.8900
IS43LR32160C-6BLI-TR
DISTI # IS43LR32160C-6BLI-TR		Integrated Silicon Solution IncDRAM Chip Mobile DDR SDRAM 512M-Bit 16M x 32 1.8V 90-Pin TFBGA T/R (Alt: IS43LR32160C-6BLI-TR)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€8.1900
  • 5000:€7.8900
  • 10000:€7.5900
  • 15000:€7.0900
  • 25000:€6.5900
IS43LR32160C-6BLI
DISTI # 49X0798		Integrated Silicon Solution IncSDRAM, DDR3, 512MBIT, 166MHZ, BGA-90,DRAM Memory Configuration:16M x 32bit,Access Time:6ns,Page Size:-,No. of Pins:90Pins,Memory Case Style:BGA,Operating Temperature Min:-40°C,Operating Temperature Max:85°C,IC Interface RoHS Compliant: Yes175
  • 1:$10.8900
  • 10:$10.1900
  • 25:$9.8900
  • 50:$8.9300
  • 100:$8.4100
  • 250:$7.3900
  • 500:$7.1500
IS43LR32160C-6BLI
DISTI # 870-IS43LR32160C6BLI		Integrated Silicon Solution IncDRAM 512M, 1.8V, 166Mhz Mobile DDR
RoHS: Compliant		239
  • 1:$10.4600
  • 10:$9.6900
  • 25:$9.4700
  • 50:$9.4200
  • 100:$8.2900
  • 250:$7.8800
  • 500:$7.8000
  • 1000:$7.5400
IS43LR32160C-6BLI-TR
DISTI # 870-I43LR32160C6BLIR		Integrated Silicon Solution IncDRAM 512M, 1.8V, 166Mhz Mobile DDR
RoHS: Compliant		0
  • 2500:$7.0000
IS43LR32160C-6BLI
DISTI # 2409138		Integrated Silicon Solution IncSDRAM, DDR3, 512MBIT, 166MHZ, BGA-90
RoHS: Compliant		175
  • 1:$16.5500
  • 10:$15.3300
  • 25:$14.9900
  • 50:$14.9100
  • 100:$13.1200
  • 250:$12.4800
  • 500:$12.3400
  • 1000:$11.9300
IS43LR32160C-6BLI
DISTI # 2409138		Integrated Silicon Solution IncSDRAM, DDR3, 512MBIT, 166MHZ, BGA-90
RoHS: Compliant		175
  • 1:£4.5900
  • 10:£4.5000
  • 25:£4.4000
  • 50:£4.3100
  • 100:£4.2100
Imagen Parte # Descripción
IS43LR32800G-6BL-TR

Mfr.#: IS43LR32800G-6BL-TR

OMO.#: OMO-IS43LR32800G-6BL-TR

 DRAM 256M, 1.8V, 166Mhz Mobile DDR
IS43LR32160C-6BL-TR

Mfr.#: IS43LR32160C-6BL-TR

OMO.#: OMO-IS43LR32160C-6BL-TR

 DRAM 512M, 1.8V, 166Mhz Mobile DDR
IS43LR32640A-5BL

Mfr.#: IS43LR32640A-5BL

OMO.#: OMO-IS43LR32640A-5BL

 DRAM 2G 1.8V DDR 64Mx32 200Mhz 90 ball BGA
IS43LR32640A-5BL-TR

Mfr.#: IS43LR32640A-5BL-TR

OMO.#: OMO-IS43LR32640A-5BL-TR

 DRAM 2G 1.8V DDR 64Mx32 200Mhz 90 ball BGA
IS43LR32800F-6BL

Mfr.#: IS43LR32800F-6BL

OMO.#: OMO-IS43LR32800F-6BL-INTEGRATED-SILICON-SOLUTION

 DRAM 256M 1.8V, 166Mhz Mobile DDR SDRAM
IS43LR32400F-6BL

Mfr.#: IS43LR32400F-6BL

OMO.#: OMO-IS43LR32400F-6BL-INTEGRATED-SILICON-SOLUTION

 DRAM 128M (4Mx32) 166MHz Mobile DDR 1.8v
IS43LR32100D-6BLI/BL

Mfr.#: IS43LR32100D-6BLI/BL

OMO.#: OMO-IS43LR32100D-6BLI-BL-1190

 Nuevo y original
IS43LR32320B-5BLI

Mfr.#: IS43LR32320B-5BLI

OMO.#: OMO-IS43LR32320B-5BLI-INTEGRATED-SILICON-SOLUTION

 IC DRAM 1G PARALLEL 90LFBGA
IS43LR32640A-6BLI/BL-

Mfr.#: IS43LR32640A-6BLI/BL-

OMO.#: OMO-IS43LR32640A-6BLI-BL--1190

 Nuevo y original
IS43LR32320B-5BLI-TR

Mfr.#: IS43LR32320B-5BLI-TR

OMO.#: OMO-IS43LR32320B-5BLI-TR-INTEGRATED-SILICON-SOLUTION

 IC DRAM 1G PARALLEL 90LFBGA
Disponibilidad
Valores:
189
En orden:
2172
Ingrese la cantidad:
El precio actual de IS43LR32160C-6BLI es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
10,46 US$
10,46 US$
10
9,69 US$
96,90 US$
25
9,47 US$
236,75 US$
50
9,42 US$
471,00 US$
100
8,29 US$
829,00 US$
250
7,88 US$
1 970,00 US$
500
7,80 US$
3 900,00 US$
1000
7,54 US$
7 540,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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