BSB028N06NN3 G

BSB028N06NN3 G
Mfr. #:
BSB028N06NN3 G
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSB028N06NN3 G Ficha de datos
Entrega:
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Más información:
BSB028N06NN3 G más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
OptiMOS 3
embalaje
Carrete
Alias ​​de parte
BSB028N06NN3GXT BSB028N06NN3GXUMA1 SP000605956
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
WDSON-2
Tecnología
Si
Número de canales
1 Channel
Configuración
Drenaje cuádruple simple de doble fuente
Tipo transistor
1 N-Channel
Disipación de potencia Pd
78 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 40 C
Otoño
6 ns
Hora de levantarse
9 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
90 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Resistencia a la fuente de desagüe de Rds
2.8 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
38 ns
Tiempo de retardo de encendido típico
21 ns
Qg-Gate-Charge
108 nC
Tags
BSB028N06NN3G, BSB028, BSB02, BSB0, BSB
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
BSB OptiMOS Power MOSFETs
Infineon Technologies BSB OptiMOS™ Power MOSFETs offer highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30 V or 60V the best choice for the demanding requirements of switched mode power supplies in servers, datacom and telecom applications.-BSB OptiMOS Power MOSFETs 30V feature super fast switching control FETs together with low EMI sync FETs to provide solutions that are easy to design in. BSB OptiMOS™ Power MOSFETs are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space- efficiency and cost. BSB OptiMOS™ Power MOSFETs products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.-With almost no parasitic package inductances, BSB OptiMOS Power MOSFETs 60V allow best controllability of the gate in highly dynamic switching environments. In addition, BSB OptiMOS Power MOSFETs 60V feature best cooling capability through top-side cooling of the metal can. This packaging technology combined with the OptiMOS silicon enables highest efficiency levels while having minimal space requirements at the same time.Learn More
Parte # Mfg. Descripción Valores Precio
BSB028N06NN3GXUMA1
DISTI # V72:2272_06382902
Infineon Technologies AGTrans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R
RoHS: Compliant
5000
  • 75000:$0.8675
  • 30000:$0.8680
  • 15000:$0.8688
  • 6000:$0.8802
  • 3000:$0.8890
  • 1000:$0.8951
  • 500:$0.9284
  • 250:$1.0326
  • 100:$1.1238
  • 50:$1.1956
  • 25:$1.3613
  • 10:$1.3976
  • 1:$1.5758
BSB028N06NN3GXUMA1
DISTI # BSB028N06NN3GXUMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 22A WDSON-2
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
5000In Stock
  • 5000:$1.0725
BSB028N06NN3GXUMA1
DISTI # BSB028N06NN3GXUMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 22A WDSON-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5000In Stock
  • 1000:$1.2321
  • 500:$1.4871
  • 100:$1.9119
  • 10:$2.3790
  • 1:$2.6300
BSB028N06NN3GXUMA1
DISTI # BSB028N06NN3GXUMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 22A WDSON-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5000In Stock
  • 1000:$1.2321
  • 500:$1.4871
  • 100:$1.9119
  • 10:$2.3790
  • 1:$2.6300
BSB028N06NN3GXUMA1
DISTI # 31314389
Infineon Technologies AGTrans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R
RoHS: Compliant
5000
  • 3000:$0.9037
  • 1000:$0.9052
  • 500:$0.9343
  • 250:$1.0383
  • 100:$1.1308
  • 50:$1.2022
  • 25:$1.3677
  • 10:$1.4045
  • 9:$1.5826
BSB028N06NN3G
DISTI # BSB028N06NN3GXUMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 22A 7-Pin WDSON T/R - Tape and Reel (Alt: BSB028N06NN3GXUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.8639
  • 10000:$0.8329
  • 20000:$0.8029
  • 30000:$0.7759
  • 50000:$0.7619
BSB028N06NN3 G
DISTI # 726-BSB028N06NN3G
Infineon Technologies AGMOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3
RoHS: Compliant
5080
  • 1:$2.2100
  • 10:$1.8800
  • 100:$1.5000
  • 500:$1.3200
  • 1000:$1.0900
  • 2500:$1.0200
  • 5000:$0.9760
BSB028N06NN3GXUMA1
DISTI # 9064306P
Infineon Technologies AGMOSFET N-CHANNEL 60V 22A OPTIMOS WDSON7, RL5000
  • 50:£1.2740
  • 100:£1.0200
BSB028N06NN3GXUMA1
DISTI # 2443367
Infineon Technologies AGMOSFET, N CH, 60V, 90A, WDSON-3
RoHS: Compliant
4981
  • 5:£1.5300
  • 25:£1.2700
  • 100:£1.0200
  • 250:£1.0100
  • 500:£0.9960
BSB028N06NN3GXUMA1
DISTI # 2443367
Infineon Technologies AGMOSFET, N CH, 60V, 90A, WDSON-3
RoHS: Compliant
4981
  • 1:$3.5000
  • 10:$2.9800
  • 100:$2.3800
  • 500:$2.0900
  • 1000:$1.7300
  • 2500:$1.6200
  • 5000:$1.5500
BSB028N06NN3GXUMA1
DISTI # 2443367RL
Infineon Technologies AGMOSFET, N CH, 60V, 90A, WDSON-3
RoHS: Compliant
0
  • 1:$3.5000
  • 10:$2.9800
  • 100:$2.3800
  • 500:$2.0900
  • 1000:$1.7300
  • 2500:$1.6200
  • 5000:$1.5500
Imagen Parte # Descripción
BSB028N06NN3 G

Mfr.#: BSB028N06NN3 G

OMO.#: OMO-BSB028N06NN3-G

MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3
BSB028N06NN3

Mfr.#: BSB028N06NN3

OMO.#: OMO-BSB028N06NN3-1190

Nuevo y original
BSB028N06NN3 G

Mfr.#: BSB028N06NN3 G

OMO.#: OMO-BSB028N06NN3-G-1190

MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3
BSB028N06NN3G

Mfr.#: BSB028N06NN3G

OMO.#: OMO-BSB028N06NN3G-1190

Trans MOSFET N-CH 60V 22A 7-Pin WDSON T/R - Tape and Reel (Alt: BSB028N06NN3GXUMA1)
BSB028N06NN3GXUMA1

Mfr.#: BSB028N06NN3GXUMA1

OMO.#: OMO-BSB028N06NN3GXUMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 60V 22A WDSON-2
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de BSB028N06NN3 G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,35 US$
1,35 US$
10
1,28 US$
12,84 US$
100
1,22 US$
121,64 US$
500
1,15 US$
574,40 US$
1000
1,08 US$
1 081,20 US$
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