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A3G35H100-04SR3

A3G35H100-04SR3
Mfr. #:
A3G35H100-04SR3
Fabricante:
NXP Semiconductors
Descripción:
RF MOSFET Transistors Airfast RF Power GaN Transistor, 3400-3600 MHz, 14 W Avg., 48 V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
A3G35H100-04SR3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
A3G35H100-04SR3 más información A3G35H100-04SR3 Product Details
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N dual
Tecnología:
Si
Id - Corriente de drenaje continua:
8.04 mA
Vds - Voltaje de ruptura de drenaje-fuente:
125 V
Ganar:
14 dB
Potencia de salida:
14 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
NI-780S-4L
Embalaje:
Carrete
Frecuencia de operación:
3400 MHz to 3600 MHz
Escribe:
RF Power MOSFET
Marca:
Semiconductores NXP
Número de canales:
2 Channel
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
250
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
- 8 V
Vgs th - Voltaje umbral puerta-fuente:
- 2.3 V
Parte # Alias:
935368927128
Tags
A3G
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
Parte # Mfg. Descripción Valores Precio
A3G35H100-04SR3
DISTI # A3G35H100-04SR3		Avnet, Inc.Trans RF FET 125VDC 4-Pin NI-780S T/R - Tape and Reel (Alt: A3G35H100-04SR3)
RoHS: Compliant
Min Qty: 250
Container: Reel		Americas - 0
  • 2500:$46.6900
  • 1500:$47.5900
  • 1000:$49.3900
  • 500:$51.3900
  • 250:$53.4900
A3G35H100-04SR3
DISTI # 58AC6127		NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR, 3400-3600 MHZ, 14 W AVG., 48 V TR0
  • 100:$45.9400
  • 50:$48.8800
  • 25:$49.6200
  • 10:$50.3500
  • 5:$51.8200
  • 1:$53.2900
A3G35H100-04SR3
DISTI # 771-A3G35H100-04SR3		NXP SemiconductorsRF MOSFET Transistors A3G35H100-04S/CFM4F///REEL 13 Q2 NDP
RoHS: Compliant		0
  • 250:$49.6200
A3G35H100-04SR3
DISTI # A3G35H100-04SR3		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 250:$55.1200
Imagen Parte # Descripción
A3G35H100-04SR3

Mfr.#: A3G35H100-04SR3

OMO.#: OMO-A3G35H100-04SR3

 RF MOSFET Transistors Airfast RF Power GaN Transistor, 3400-3600 MHz, 14 W Avg., 48 V
A3G35H100-04SR3

Mfr.#: A3G35H100-04SR3

OMO.#: OMO-A3G35H100-04SR3-1152

 Trans RF FET 125VDC 4-Pin NI-780S T/R - Tape and Reel (Alt: A3G35H100-04SR3)
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de A3G35H100-04SR3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
60,64 US$
60,64 US$
5
59,28 US$
296,40 US$
10
56,96 US$
569,60 US$
25
55,13 US$
1 378,25 US$
100
51,09 US$
5 109,00 US$
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