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IDM08G120C5XTMA1

IDM08G120C5XTMA1
Mfr. #:
IDM08G120C5XTMA1
Fabricante:
Infineon Technologies
Descripción:
Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IDM08G120C5XTMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IDM08G120C5XTMA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Diodos, rectificadores - simple
Serie
thinQ!
Producto
Diodos de carburo de silicio Schottky
embalaje
Tape & Reel (TR)
Alias ​​de parte
IDM08G120C5 SP001162122
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-252-3, DPak (2 Leads + Tab), SC-63
Tecnología
Sic
Tipo de montaje
Montaje superficial
Paquete de dispositivo de proveedor
PG-TO252-2
Configuración
Único
Velocidad
Fast Recovery = 200mA (Io)
Tipo de diodo
Carburo de silicio Schottky
Corriente-fuga-inversa-Vr
40μA @ 1200V
Voltaje-Forward-Vf-Max-If
1.95V @ 8A
Voltaje-DC-Reverse-Vr-Max
1200V (1.2kV)
Actual-Promedio-Rectificado-Io
8A (DC)
Tiempo de recuperación inverso trr
-
Capacitancia-Vr-F
365pF @ 1V, 1MHz
Unión de temperatura de funcionamiento
-55°C ~ 175°C
Disipación de potencia Pd
167 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Vf-Tensión directa
1.65 V
Vr-Tensión inversa
1.2 kV
Ir-Corriente inversa
3 uA
If-Forward-Current
8 A
Vrrm-Tensión-inversa-repetitiva
1.2 kV
Ifsm-Forward-Surge-Current
70 A
Tags
IDM0, IDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IDM08G120C5 Series 1200 V 27 A 5th Generation ThinQ!™SiC Schottky Diode-TO-252-3
***ark
Sic Schottky Diode, 1.2Kv, 27A, To-252; Product Range:thinq 5G 1200V Series; Diode Configuration:single; Repetitive Reverse Voltage Vrrm Max:1.2Kv; Continuous Forward Current If:27A; Total Capacitive Charge Qc:28Nc; Diode Case Rohs Compliant: Yes
***ineon
With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
Gen 5 1200V CoolSiC™ Schottky Diodes
Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage, and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
Parte # Mfg. Descripción Valores Precio
IDM08G120C5XTMA1
DISTI # V72:2272_09156853		Infineon Technologies AGDiode Schottky 1.2KV 27A 3-Pin(2+Tab) DPAK T/R2480
  • 1000:$3.4910
  • 500:$3.9620
  • 250:$4.3670
  • 100:$4.5430
  • 25:$5.0240
  • 10:$5.3210
  • 1:$5.7810
IDM08G120C5XTMA1
DISTI # IDM08G120C5XTMA1CT-ND		Infineon Technologies AGDIODE SCHOTTKY 1200V 8A TO252-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		872In Stock
  • 1000:$4.0508
  • 500:$4.6510
  • 100:$5.3411
  • 10:$6.4510
  • 1:$7.1400
IDM08G120C5XTMA1
DISTI # IDM08G120C5XTMA1DKR-ND		Infineon Technologies AGDIODE SCHOTTKY 1200V 8A TO252-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		872In Stock
  • 1000:$4.0508
  • 500:$4.6510
  • 100:$5.3411
  • 10:$6.4510
  • 1:$7.1400
IDM08G120C5XTMA1
DISTI # IDM08G120C5XTMA1TR-ND		Infineon Technologies AGDIODE SCHOTTKY 1200V 8A TO252-2
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$3.8843
IDM08G120C5XTMA1
DISTI # 26196085		Infineon Technologies AGDiode Schottky 1.2KV 27A 3-Pin(2+Tab) DPAK T/R2480
  • 1000:$3.4910
  • 500:$3.9620
  • 250:$4.3670
  • 100:$4.5430
  • 25:$5.0240
  • 10:$5.3210
  • 2:$5.7810
IDM08G120C5XTMA1
DISTI # IDM08G120C5XTMA1		Infineon Technologies AGDiode Schottky Diode 1200V 27A 2-Pin TO-252 T/R - Tape and Reel (Alt: IDM08G120C5XTMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$3.8900
  • 5000:$3.7900
  • 10000:$3.6900
  • 15000:$3.4900
  • 25000:$3.4900
IDM08G120C5XTMA1
DISTI # 34AC1582		Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 27A, TO-252,Product Range:thinQ 5G 1200V Series,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:27A,Total Capacitive Charge Qc:28nC,Diode Case , RoHS Compliant: Yes2445
  • 1:$6.6000
  • 10:$5.9700
  • 25:$5.6900
  • 50:$5.3200
  • 100:$4.9400
  • 250:$4.7200
  • 500:$4.3100
  • 1000:$3.7500
IDM08G120C5XTMA1Infineon Technologies AG 
RoHS: Not Compliant		2210
  • 1000:$4.2500
  • 500:$4.4700
  • 100:$4.6600
  • 25:$4.8600
  • 1:$5.2300
IDM08G120C5XTMA1
DISTI # 726-IDM08G120C5XTMA1		Infineon Technologies AGSchottky Diodes & Rectifiers SIC CHIP/DISCRETE
RoHS: Compliant		2018
  • 1:$6.6000
  • 10:$5.9700
  • 25:$5.6900
  • 100:$4.9400
  • 250:$4.7200
  • 500:$4.3100
  • 1000:$3.7500
  • 2500:$3.6100
IDM08G120C5XTMA1
DISTI # C1S322000624474		Infineon Technologies AGRectifier Diodes
RoHS: Compliant		2480
  • 250:$4.3670
  • 100:$4.5430
  • 25:$5.0240
  • 10:$5.3210
  • 1:$5.7810
IDM08G120C5XTMA1
DISTI # 2780806		Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 27A, TO-252
RoHS: Compliant		2460
  • 1:£5.2000
  • 5:£4.8400
  • 10:£4.4700
  • 50:£4.1800
  • 100:£3.8900
IDM08G120C5XTMA1
DISTI # 2780806		Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 27A, TO-252
RoHS: Compliant		2445
  • 1:$8.5700
  • 5:$8.0100
  • 10:$7.0800
  • 50:$6.7000
  • 100:$6.3500
  • 250:$6.0400
Imagen Parte # Descripción
IDM08G120C5XTMA1

Mfr.#: IDM08G120C5XTMA1

OMO.#: OMO-IDM08G120C5XTMA1

 Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
IDM08G120C5XTMA1

Mfr.#: IDM08G120C5XTMA1

OMO.#: OMO-IDM08G120C5XTMA1-INFINEON-TECHNOLOGIES

 Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de IDM08G120C5XTMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,24 US$
5,24 US$
10
4,97 US$
49,73 US$
100
4,71 US$
471,15 US$
500
4,45 US$
2 224,90 US$
1000
4,19 US$
4 188,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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