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GS881E32CGD-250

GS881E32CGD-250
Mfr. #:
GS881E32CGD-250
Fabricante:
GSI Technology
Descripción:
SRAM 2.5 or 3.3V 256K x 32 8M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS881E32CGD-250 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS881E32CGD-250 más información
Atributo del producto
Valor de atributo
Fabricante:
Tecnología GSI
Categoria de producto:
SRAM
RoHS:
Y
Tamaño de la memoria:
9 Mbit
Organización:
256 k x 32
Tiempo de acceso:
5.5 ns
Frecuencia máxima de reloj:
250 MHz
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
3.6 V
Voltaje de suministro - Min:
2.3 V
Corriente de suministro - Máx .:
155 mA, 195 mA
Temperatura mínima de funcionamiento:
0 C
Temperatura máxima de funcionamiento:
+ 70 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
BGA-165
Embalaje:
Bandeja
Tipo de memoria:
SDR
Serie:
GS881E32CGD
Escribe:
Tubería DCD / Flujo continuo
Marca:
Tecnología GSI
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
72
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
SyncBurst
Tags
GS881E32CGD-25, GS881E32CGD-2, GS881E32CGD, GS881E32CG, GS881E32C, GS881E32, GS881E3, GS881E, GS881, GS88, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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IC, SRAM, 8MB, 512KX16, 3V, VFBGA48; Memory Size:8Mbit; Memory Configuration:512K x 16; Access Time:45ns; Supply Voltage Range:2.2V to 3.6V; Memory Case Style:FBGA; No. of Pins:48; Operating Temperature Range:-40°C to +85°C; SVHC:No SVHC (20-Jun-2011); Frequency:1MHz; Memory Configuration:512K x 16; Memory Size:8Mbit; Memory Type:SRAM; Memory Voltage Vcc:3V; Package / Case:FBGA; Supply Voltage Max:3.6V; Supply Voltage Min:2.2V; Termination Type:SMD
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512K X 16 STANDARD SRAM 70 ns PBGA48
***S
French Electronic Distributor since 1988
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SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3.1ns 165-Pin BGA
*** Stop Electro
ZBT SRAM, 256KX36, 3.1ns, CMOS, PBGA165
***or
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CY7C1354CV25 9 Mb (256 K x 36) 166 MHz 2.5 V Pipelined SRAM - FBGA-165
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Synchronous SRAM, NoBL, Pipeline, 9216 Kb Density, 166 MHz Frequency, BGA-165
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SRAM Chip Sync Quad 2.5V 9M-bit 256K x 36 3.5ns 165-Pin FBGA Tray
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3A991.B.2.A Surface Mount CY7C1354 Tray ic memory 166MHz 3.5ns 15mm 180mA
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256K X 36 ZBT SRAM 3.5 ns PBGA165
***i-Key
IC SRAM 9MBIT PARALLEL 165FBGA
***pmh
STANDARD SRAM, 512KX16, 55NS PBG
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Imagen Parte # Descripción
GS881E32CGD-250

Mfr.#: GS881E32CGD-250

OMO.#: OMO-GS881E32CGD-250

 SRAM 2.5 or 3.3V 256K x 32 8M
GS881E32CGD-250IV

Mfr.#: GS881E32CGD-250IV

OMO.#: OMO-GS881E32CGD-250IV

 SRAM 1.8/2.5V 256K x 32 8M
GS881E36CGD-150IV

Mfr.#: GS881E36CGD-150IV

OMO.#: OMO-GS881E36CGD-150IV

 SRAM 1.8/2.5V 256K x 36 9M
GS881E36CD-300I

Mfr.#: GS881E36CD-300I

OMO.#: OMO-GS881E36CD-300I

 SRAM 2.5 or 3.3V 256K x 32 8M
GS881E36CGD-200I

Mfr.#: GS881E36CGD-200I

OMO.#: OMO-GS881E36CGD-200I

 SRAM 2.5 or 3.3V 256K x 36 9M
GS881E32CGD-150I

Mfr.#: GS881E32CGD-150I

OMO.#: OMO-GS881E32CGD-150I

 SRAM 2.5 or 3.3V 256K x 32 8M
GS881E36CGD-150I

Mfr.#: GS881E36CGD-150I

OMO.#: OMO-GS881E36CGD-150I

 SRAM 2.5 or 3.3V 256K x 36 9M
GS881E32CGD-333

Mfr.#: GS881E32CGD-333

OMO.#: OMO-GS881E32CGD-333

 SRAM 2.5 or 3.3V 256K x 32 8M
GS881E36CD-333I

Mfr.#: GS881E36CD-333I

OMO.#: OMO-GS881E36CD-333I

 SRAM 2.5 or 3.3V 256K x 32 8M
GS881E36CGD-250IV

Mfr.#: GS881E36CGD-250IV

OMO.#: OMO-GS881E36CGD-250IV

 SRAM 1.8/2.5V 256K x 36 9M
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de GS881E32CGD-250 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
9,62 US$
9,62 US$
25
8,93 US$
223,25 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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