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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| FMI16N50ES DISTI # FE0000000000984 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 16A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMI16N50ESSC DISTI # FE0000000004526 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMI16N50ESC DISTI # FE0000000004525 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: FMI161JZ OMO.#: OMO-FMI161JZ-1190 |
Nuevo y original |
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Mfr.#: FMI16N50E OMO.#: OMO-FMI16N50E-1190 |
Power Field-Effect Transistor, 16A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI16N50ES OMO.#: OMO-FMI16N50ES-1190 |
Power Field-Effect Transistor, 16A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI16N60E OMO.#: OMO-FMI16N60E-1190 |
Power Field-Effect Transistor, 16A I(D),600V,0.47ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI16N60ES OMO.#: OMO-FMI16N60ES-1190 |
Power Field-Effect Transistor, 16A I(D),600V,0.47ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |