SI2392ADS-T1-GE3

Name: Vishay - SI2392ADS-T1-GE3
Brand: Vishay
SKU: OMO-2826965
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI2392ADS-T1-GE3
Fabricante:: Vishay
Descripción:: IGBT Transistors MOSFET 100V .126ohm@10V 3.1A N-Ch T-FET
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI2392ADS-T1-GE3 Ficha de datos
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Más información:: SI2392ADS-T1-GE3 más información

Atributo del producto
Valor de atributo

Fabricante: VISHAY

categoria de producto: FET - Single

Serie: TrincheraFETR

embalaje: Embalaje alternativo de Digi-ReelR

Unidad de peso: 0.050717 oz

Nombre comercial: ThunderFET TrenchFET

Paquete-Estuche: TO-236-3, SC-59, SOT-23-3

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: SOT-23-3 (TO-236)

Tipo FET: Canal N MOSFET, óxido metálico

Potencia máxima: 2.5W

Tipo transistor: 1 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 100V

Entrada-Capacitancia-Ciss-Vds: 196pF @ 50V

Función FET: Estándar

Corriente-Continuo-Drenaje-Id-25 ° C: 3.1A (Tc)

Rds-On-Max-Id-Vgs: 126 mOhm @ 2A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Puerta-Carga-Qg-Vgs: 10.4nC @ 10V

Id-corriente-de-drenaje-continua: 3.1 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Vgs-th-Gate-Source-Threshold-Voltage: 3 V

Resistencia a la fuente de desagüe de Rds: 126 mOhms

Polaridad del transistor: Canal N

Tags: SI2392, SI239, SI23, SI2

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SI2392ADS-T1-GE3 Descripción

***ical: Trans MOSFET N-CH 100V 2.2A 3-Pin SOT-23 T/R

***et Europe: Trans MOSFET N-CH 100V 3.1A 3-Pin SOT-23

***ark: N-Ch MOSFET SOT-23 100V 189mohm @ 4.5V

***et: N-CH MOSFET SOT-23 100V 189MOHM @ 4.5V

***i-Key: MOSFET N-CH 100V 3.1A SOT-23

***ure Electronics: MOSFET 100V .126OHM@10V 3.1A N-CH T-FET

***ronik: N-CH 100V 3,1A 126mOhm SOT23

*** Yorker Electronics: N-CHANNEL 100-V (D-S) MOSFET

***: N-CHANNEL 100V (D-S)

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 100V, 3.1A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.102ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2016)

***nell: MOSFET, CA-N, 100V, 3,1A, SOT-23; Polarità Transistor:Canale N; Corrente Continua di Drain Id:3.1A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.102ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:2.5W; Modello Case Transistor:SOT-23; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (20-Jun-2016)

SI2392ADS-T1-GE3 Más información

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

ThunderFET® Power MOSFETs: Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI2392ADS-T1-GE3 DISTI # V36:1790_09216886	Vishay Intertechnologies	Trans MOSFET N-CH 100V 2.2A 3-Pin TO-236 T/R RoHS: Compliant	3000	3000:$0.1959
SI2392ADS-T1-GE3 DISTI # V72:2272_09216886	Vishay Intertechnologies	Trans MOSFET N-CH 100V 2.2A 3-Pin TO-236 T/R RoHS: Compliant	47	25:$0.2541 10:$0.3397 1:$0.4039
SI2392ADS-T1-GE3 DISTI # SI2392ADS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 3.1A SOT-23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.2003
SI2392ADS-T1-GE3 DISTI # SI2392ADS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 3.1A SOT-23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.2263 500:$0.2929 100:$0.3994 10:$0.5330 1:$0.6300
SI2392ADS-T1-GE3 DISTI # SI2392ADS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 3.1A SOT-23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.2263 500:$0.2929 100:$0.3994 10:$0.5330 1:$0.6300
SI2392ADS-T1-GE3 DISTI # 27559893	Vishay Intertechnologies	Trans MOSFET N-CH 100V 2.2A 3-Pin TO-236 T/R RoHS: Compliant	3000	3000:$0.1959
SI2392ADS-T1-GE3 DISTI # 25790335	Vishay Intertechnologies	Trans MOSFET N-CH 100V 2.2A 3-Pin TO-236 T/R RoHS: Compliant	47	39:$0.2538
SI2392ADS-T1-GE3 DISTI # SI2392ADS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 3.1A 3-Pin SOT-23 (Alt: SI2392ADS-T1-GE3) RoHS: Compliant Min Qty: 6000	Asia - 15000	3000:$1.9800 6000:$1.3655 9000:$1.0154 15000:$0.8250 30000:$0.7472 75000:$0.7200 150000:$0.6947
SI2392ADS-T1-GE3 DISTI # SI2392ADS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 3.1A 3-Pin SOT-23 - Tape and Reel (Alt: SI2392ADS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1709 6000:$0.1649 12000:$0.1589 18000:$0.1539 30000:$0.1499
SI2392ADS-T1-GE3 DISTI # 01AC4985	Vishay Intertechnologies	MOSFET, N-CH, 100V, 3.1A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:3.1A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.102ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	0	1:$0.5100 10:$0.3930 25:$0.3610 50:$0.3300 100:$0.2980 250:$0.2740 500:$0.2500 1000:$0.1990
SI2392ADS-T1-GE3 DISTI # 67X6853	Vishay Intertechnologies	N-CHANNEL 100-V (D-S) MOSFET	0	1:$0.2030 5000:$0.1980 10000:$0.1830 20000:$0.1710 30000:$0.1590 50000:$0.1520
SI2392ADS-T1-GE3 DISTI # 78-SI2392ADS-T1-GE3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs SOT-23 RoHS: Compliant	157	1:$0.5600 10:$0.4250 100:$0.3150 500:$0.2590 1000:$0.2000 3000:$0.1830 6000:$0.1710 9000:$0.1590
SI2392ADS-T1-GE3 DISTI # 2679682	Vishay Intertechnologies	MOSFET, N-CH, 100V, 3.1A, SOT-23 RoHS: Compliant	0	3000:$0.2270 6000:$0.2210 9000:$0.2160 12000:$0.2120
SI2392ADS-T1-GE3 DISTI # 2646372	Vishay Intertechnologies	MOSFET, N-CH, 100V, 3.1A, SOT-23 RoHS: Compliant	38	1:$0.8870 10:$0.6720 100:$0.4990 500:$0.4100 1000:$0.3170 3000:$0.2900 6000:$0.2710 9000:$0.2520
SI2392ADS-T1-GE3 DISTI # 2646372	Vishay Intertechnologies	MOSFET, N-CH, 100V, 3.1A, SOT-23 RoHS: Compliant	0	5:£0.3640 50:£0.2460 250:£0.1960 1000:£0.1510 3000:£0.1390
SI2392ADS-T1-GE3 DISTI # C1S804000762791	Vishay Intertechnologies	Other transistors	47	25:$0.2538 10:$0.3397
SI2392ADS-T1-GE3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs SOT-23 RoHS: Compliant	Americas - 9000
SI2392ADS-T1-GE3.	Vishay Intertechnologies	N-CHANNEL 100V (D-S) RoHS: Compliant	Americas - 325	25:$0.2800

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Parte #

Descripción

Mfr.#: SI2392ADS-T1-GE3

OMO.#: OMO-SI2392ADS-T1-GE3

MOSFET 100V Vds 20V Vgs SOT-23

Mfr.#: SI2392ADS-T1-GE3

OMO.#: OMO-SI2392ADS-T1-GE3-VISHAY

IGBT Transistors MOSFET 100V .126ohm@10V 3.1A N-Ch T-FET

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El precio actual de SI2392ADS-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,22 US$~~; ~~0,22 US$~~

10: ~~0,21 US$~~; ~~2,12 US$~~

100: ~~0,20 US$~~; ~~20,12 US$~~

500: ~~0,19 US$~~; ~~95,00 US$~~

1000: ~~0,18 US$~~; ~~178,80 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

SI2392 3
SI239 6
SI23 561
SI2 1125

SI2392ADS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes