KSH45H11TM

KSH45H11TM
Mfr. #:
KSH45H11TM
Fabricante:
ON Semiconductor / Fairchild
Descripción:
Bipolar Transistors - BJT PNP Epitaxial Sil
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
KSH45H11TM Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - BJT
RoHS:
E
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Polaridad del transistor:
PNP
Configuración:
Único
Voltaje colector-emisor VCEO Max:
- 80 V
Emisor- Voltaje base VEBO:
- 5 V
Voltaje de saturación colector-emisor:
- 1 V
Corriente máxima del colector de CC:
- 8 A
Producto de ganancia de ancho de banda fT:
40 MHz
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
KSH45H11
Altura:
2.3 mm
Longitud:
6.6 mm
Embalaje:
Carrete
Ancho:
6.1 mm
Marca:
ON Semiconductor / Fairchild
Corriente continua del colector:
- 8 A
Colector de CC / Ganancia base hfe Min:
60
Pd - Disipación de energía:
20 W
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
2500
Subcategoría:
Transistores
Parte # Alias:
KSH45H11TM_NL
Unidad de peso:
0.009184 oz
Tags
KSH45H11T, KSH45H1, KSH45H, KSH45, KSH4, KSH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
***ical
Trans GP BJT PNP 80V 8A 3-Pin (2+Tab) DPAK T/R
***rchild Semiconductor
General-purpose power and switching such as output or driver stages in applications D-PAK for surface mount applications.
Parte # Mfg. Descripción Valores Precio
KSH45H11TM
DISTI # KSH45H11TMTR-ND
ON SemiconductorTRANS PNP 80V 8A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    KSH45H11TM
    DISTI # KSH45H11TMCT-ND
    ON SemiconductorTRANS PNP 80V 8A DPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
    • 1000:$0.3383
    • 500:$0.4229
    • 100:$0.5349
    • 10:$0.6980
    • 1:$0.7900
    KSH45H11TM
    DISTI # KSH45H11TMDKR-ND
    ON SemiconductorTRANS PNP 80V 8A DPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
    • 1000:$0.3383
    • 500:$0.4229
    • 100:$0.5349
    • 10:$0.6980
    • 1:$0.7900
    KSH45H11TM
    DISTI # 512-KSH45H11TM
    ON SemiconductorBipolar Transistors - BJT PNP Epitaxial Sil
    RoHS: Compliant
    415
    • 1:$0.7300
    • 10:$0.6070
    • 100:$0.3910
    • 1000:$0.3130
    • 2500:$0.2640
    • 10000:$0.2550
    • 25000:$0.2450
    KSH45H11TMON Semiconductor 
    RoHS: Not Compliant
    7500
    • 1000:$0.4100
    • 500:$0.4300
    • 100:$0.4500
    • 25:$0.4700
    • 1:$0.5100
    KSH45H11TMFairchild Semiconductor CorporationPower Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
    RoHS: Compliant
    13687
    • 1000:$0.4100
    • 500:$0.4300
    • 100:$0.4500
    • 25:$0.4700
    • 1:$0.5100
    Imagen Parte # Descripción
    CDSOT23-T15C

    Mfr.#: CDSOT23-T15C

    OMO.#: OMO-CDSOT23-T15C

    TVS Diodes / ESD Suppressors TVS Diode Array 15VOLT
    MMBT2222AT

    Mfr.#: MMBT2222AT

    OMO.#: OMO-MMBT2222AT

    Bipolar Transistors - BJT NPN GENERAL PURPOSE AMPLIFIER
    NTR4101PT1G

    Mfr.#: NTR4101PT1G

    OMO.#: OMO-NTR4101PT1G

    MOSFET -20V -3.2A P-Channel
    43045-0209

    Mfr.#: 43045-0209

    OMO.#: OMO-43045-0209-410

    Headers & Wire Housings 2 CKT R/A SMT HDR
    CDSOT23-T15C

    Mfr.#: CDSOT23-T15C

    OMO.#: OMO-CDSOT23-T15C-BOURNS

    Nuevo y original
    NTR4101PT1G

    Mfr.#: NTR4101PT1G

    OMO.#: OMO-NTR4101PT1G-ON-SEMICONDUCTOR

    MOSFET P-CH 20V 1.8A SOT-23
    5015

    Mfr.#: 5015

    OMO.#: OMO-5015-KEYSTONE-ELECTRONICS

    TEST POINT, PCB, SMT, FULL REEL, Product Range:-, Connector Colour:-, Connector Mounting:Surface Mount, Mounting Hole Dia:-, Contact Material:Phosphor Bronze, Contact Plating:Silver Plated Conta
    744053100

    Mfr.#: 744053100

    OMO.#: OMO-744053100-WURTH-ELECTRONICS

    FIXED IND 10UH 1.5A 70 MOHM SMD
    MMBT2222AT

    Mfr.#: MMBT2222AT

    OMO.#: OMO-MMBT2222AT-ON-SEMICONDUCTOR

    TRANS NPN 40V 0.6A SOT523F
    Disponibilidad
    Valores:
    315
    En orden:
    2298
    Ingrese la cantidad:
    El precio actual de KSH45H11TM es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Empezar con
    Nuevos productos
    • Gate Drivers
      The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
    • NCP137 700 mA LDO Regulators
      ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
    • NCP114 Low Dropout Regulators
      ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
    • LC717A00AR Touch Sensor
      These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
    • Compare KSH45H11TM
      KSH45H11TF vs KSH45H11TM vs KSH45H11TMNL
    • FDMQ86530L Quad-MOSFET
      ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
    Top