SIHH180N60E-T1-GE3

SIHH180N60E-T1-GE3
Mfr. #:
SIHH180N60E-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHH180N60E-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIHH180N60E-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-8x8-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
19 A
Rds On - Resistencia de la fuente de drenaje:
180 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
33 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
114 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
E
Tipo de transistor:
1 N-Channel E-Series Power MOSFET
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
5.3 S
Otoño:
23 ns
Tipo de producto:
MOSFET
Hora de levantarse:
49 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
22 ns
Tiempo típico de retardo de encendido:
14 ns
Tags
SIHH1, SIHH, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
4th Gen E Series MOSFETs
Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHH180N60E-T1-GE3
DISTI # V99:2348_22712081
Vishay IntertechnologiesE Series Power MOSFET PowerPAK 8x8, 180 m @ 10V0
  • 3000:$2.6430
SIHH180N60E-T1-GE3
DISTI # SIHH180N60E-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH PPAK 8X8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$2.5179
SIHH180N60E-T1-GE3
DISTI # SIHH180N60E-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH PPAK 8X8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$2.7299
  • 500:$3.2369
  • 100:$3.8024
  • 10:$4.6410
  • 1:$5.1700
SIHH180N60E-T1-GE3
DISTI # SIHH180N60E-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH PPAK 8X8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$2.7299
  • 500:$3.2369
  • 100:$3.8024
  • 10:$4.6410
  • 1:$5.1700
SIHH180N60E-T1-GE3
DISTI # SIHH180N60E-T1-GE3
Vishay Intertechnologies(Alt: SIHH180N60E-T1-GE3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€1.9900
  • 100:€2.0900
  • 500:€2.0900
  • 50:€2.1900
  • 25:€2.3900
  • 10:€2.9900
  • 1:€3.7900
SIHH180N60E-T1-GE3
DISTI # SIHH180N60E-T1-GE3
Vishay Intertechnologies- Tape and Reel (Alt: SIHH180N60E-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 18000:$2.2900
  • 30000:$2.2900
  • 12000:$2.3900
  • 6000:$2.4900
  • 3000:$2.5900
SIHH180N60E-T1-GE3
DISTI # 81AC3463
Vishay IntertechnologiesN-CHANNEL 600V0
  • 20000:$2.2200
  • 12000:$2.2600
  • 8000:$2.3500
  • 4000:$2.5300
  • 2000:$2.7100
  • 1:$2.8300
SIHH180N60E-T1-GE3
DISTI # 99AC0538
Vishay IntertechnologiesMOSFET, N-CH, 600V, 19A, 150DEG C, 114W,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes0
  • 500:$3.0200
  • 250:$3.3600
  • 100:$3.4700
  • 50:$3.7200
  • 25:$3.9700
  • 10:$4.2200
  • 1:$5.1000
SIHH180N60E-T1-GE3
DISTI # 78-SIHH180N60E-T1GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
RoHS: Compliant
18
  • 1:$5.0500
  • 10:$4.1800
  • 100:$3.4400
  • 250:$3.3300
  • 500:$2.9900
  • 1000:$2.5200
  • 3000:$2.3900
SIHH180N60E-T1-GE3
DISTI # 3014145
Vishay IntertechnologiesMOSFET, N-CH, 600V, 19A, 150DEG C, 114W
RoHS: Compliant
0
  • 1000:$3.2000
  • 500:$3.5500
  • 250:$3.9800
  • 100:$4.1800
  • 10:$5.0000
  • 1:$6.4000
SIHH180N60E-T1-GE3
DISTI # 3014145
Vishay IntertechnologiesMOSFET, N-CH, 600V, 19A, 150DEG C, 114W0
  • 500:£2.1700
  • 250:£2.4100
  • 100:£2.4900
  • 10:£3.0300
  • 1:£4.0700
Imagen Parte # Descripción
SIHH180N60E-T1-GE3

Mfr.#: SIHH180N60E-T1-GE3

OMO.#: OMO-SIHH180N60E-T1-GE3

MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
SIHH180N60E-T1-GE3

Mfr.#: SIHH180N60E-T1-GE3

OMO.#: OMO-SIHH180N60E-T1-GE3-VISHAY

E Series Power MOSFET PowerPAK 8x8, 180 m @ 10V
Disponibilidad
Valores:
18
En orden:
2001
Ingrese la cantidad:
El precio actual de SIHH180N60E-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,05 US$
5,05 US$
10
4,18 US$
41,80 US$
100
3,44 US$
344,00 US$
250
3,33 US$
832,50 US$
500
2,99 US$
1 495,00 US$
1000
2,52 US$
2 520,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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