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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| IRFW520ATM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 9.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 774 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: IRFW510ATM OMO.#: OMO-IRFW510ATM-1190 |
MOSFET |
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Mfr.#: IRFW520ATM OMO.#: OMO-IRFW520ATM-1190 |
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
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Mfr.#: IRFW520ATMFSC OMO.#: OMO-IRFW520ATMFSC-1190 |
Nuevo y original |
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Mfr.#: IRFW530 OMO.#: OMO-IRFW530-1190 |
Nuevo y original |
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Mfr.#: IRFW530ATM OMO.#: OMO-IRFW530ATM-1190 |
MOSFET 100V N-Channel A-FET |
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Mfr.#: IRFW530ATM-NL OMO.#: OMO-IRFW530ATM-NL-1190 |
Nuevo y original |
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Mfr.#: IRFW540 OMO.#: OMO-IRFW540-1190 |
Nuevo y original |
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Mfr.#: IRFW540ATM_NL OMO.#: OMO-IRFW540ATM-NL-1190 |
Nuevo y original |
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Mfr.#: IRFW550A OMO.#: OMO-IRFW550A-1190 |
Nuevo y original |
|
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Mfr.#: IRFW550ATM OMO.#: OMO-IRFW550ATM-1190 |
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
