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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| PSMN9R0-30YL,115 DISTI # 568-4687-2-ND | NXP Semiconductors | MOSFET N-CH 30V 61A LFPAK RoHS: Compliant Min Qty: 1500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| PSMN9R0-30YL,115 DISTI # 568-4687-1-ND | NXP Semiconductors | MOSFET N-CH 30V 61A LFPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| PSMN9R0-30YL,115 DISTI # 568-4687-6-ND | NXP Semiconductors | MOSFET N-CH 30V 61A LFPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| PSMN9R0-30YL,115 DISTI # 771-PSMN9R0-30YL-T/R | Nexperia | MOSFET <=30V N CH TRENCHFET RoHS: Compliant | 0 | |
| PSMN9R0-30YL115 | NXP Semiconductors | Now Nexperia PSMN9R0-30YL - Power Field-Effect Transistor, 61A I(D), 30V, 0.01103ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 RoHS: Not Compliant | 22729 |
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| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: PSMN9R8-30MLC,115 OMO.#: OMO-PSMN9R8-30MLC-115 |
MOSFET N-channel MOSFET logic level LFPAK33 |
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Mfr.#: PSMN9R0-25YLC OMO.#: OMO-PSMN9R0-25YLC-1190 |
Nuevo y original |
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Mfr.#: PSMN9R0-30LL+115 OMO.#: OMO-PSMN9R0-30LL-115-1190 |
Nuevo y original |
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Mfr.#: PSMN9R0-30YL115 OMO.#: OMO-PSMN9R0-30YL115-1190 |
Now Nexperia PSMN9R0-30YL - Power Field-Effect Transistor, 61A I(D), 30V, 0.01103ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK |
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Mfr.#: PSMN9R5-100BS OMO.#: OMO-PSMN9R5-100BS-1190 |
MOSFET, N CH, 100V, 89A, D2PAK |
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Mfr.#: PSMN9R5-100XS127 OMO.#: OMO-PSMN9R5-100XS127-1190 |
Nuevo y original |
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Mfr.#: PSMN9R5-30YLC115 OMO.#: OMO-PSMN9R5-30YLC115-1190 |
Now Nexperia PSMN9R5-30YLC - Power Field-Effect Transistor, 44A I(D), 30V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 |
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Mfr.#: PSMN9R8-30MLC,115 |
MOSFET N-CH 30V 50A LFPAK33 |
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Mfr.#: PSMN9R5-100PS,127 |
IGBT Transistors MOSFET N-CH 100V STD LEVEL MOSFET |
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Mfr.#: PSMN9R5-100BS118 OMO.#: OMO-PSMN9R5-100BS118-1190 |
Now Nexperia PSMN9R5-100BS - Power Field-Effect Transistor, 89A I(D), 100V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |