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SI4455DY-T1-GE3

SI4455DY-T1-GE3
Mfr. #:
SI4455DY-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET -150V Vds 20V Vgs SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4455DY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4455DY-T1-GE3 DatasheetSI4455DY-T1-GE3 Datasheet (P4-P6)SI4455DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Más información:
SI4455DY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SI4
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
SI4455DY-GE3
Unidad de peso:
0.006596 oz
Tags
SI4455DY-T, SI4455D, SI4455, SI445, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 150V 2A 8-Pin SOIC N T/R
***enic
150V 2A 295m´Î@10V4A 3.1W 4V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS
***mal
P-Ch MOSFET SO-8 150V 295mohm @ 10V - Lead(Pb) and
***ark
P-CHANNEL 150-V (D-S) MOSFET ROHS COMPLIANT: YES
***ment14 APAC
MOSFET, P-CH, 150V, 2.8A, SOIC;
***el Electronic
MOSFET 150V 8.9A 5.9W 295mohm @ 10V
***roFlash
Small Signal Field-Effect Transistor, 2.8A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ponent Sense
FET P-CH IRF6216TRPBF -150V -2.2A 0.24
***et Japan
Transistor MOSFET Array Dual P-CH 30V 2.3A 8-Pin SOIC T/R
***ure Electronics
Dual P-Channel 30 V 0.4 Ohm 12 nC HEXFET® Power Mosfet - SOIC-8
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-2.3A; On Resistance, Rds(on):250mohm; Rds(on) Test Voltage, Vgs:-10V; Leaded Process Compatible:Yes RoHS Compliant: Yes
***trelec
Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = -2.3 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 250 / Gate-Source Voltage V = 20 / Fall Time ns = 6.9 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 9.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
***icroelectronics
N-channel 150 V, 0.045 Ω, 5 A, SO-8 STripFET͐2;2; III Power MOSFET
***ical
Trans MOSFET N-CH 150V 5A 8-Pin SO N T/R
***r Electronics
Power Field-Effect Transistor, 5A I(D), 150V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***el Electronic
DIODE GEN PURP 600V 30A TO220F
***(Formerly Allied Electronics)
IRF7815PBF N-channel MOSFET Transistor, 5.1 A, 150 V, 8-Pin SOIC | Infineon IRF7815PBF
***ark
Mosfet Transistor, N Channel, 5.1 A, 150 V, 0.034 Ohm, 10 V, 4 V
***ure Electronics
Single N-Channel 150 V 43 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***nell
MOSFET,W DIODE,N CH,150V,5.1A,SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.1A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P
***roFlash
Power Field-Effect Transistor, 5.1A I(D), 150V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ure Electronics
N-Channel 200 V 0.240 Ohm 1.5 W Surface Mount Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R
***enic
200V 1.7A 1.5W 240m´Î@10V2.2A 4V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS
***ical
Trans MOSFET P-CH 60V 2.6A 8-Pin SOIC N T/R
***S
French Electronic Distributor since 1988
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:2.6A; On Resistance, Rds(on):0.17ohm; Rds(on) Test Voltage, Vgs:-10V ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 150 V 0.09 Ohm 41 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R / MOSFET N-CH 150V 3.6A 8-SOIC
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ment14 APAC
MOSFET, N-CH, 150V, 3.6A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Source Voltage Vds:150V; On Resistance
***nsix Microsemi
Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:3.6A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:30V; Package/Case:8-SO; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***nell
MOSFET, N-CH, 150V, 3.6A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4455DY-T1-GE3
DISTI # V72:2272_09216500		Vishay IntertechnologiesTrans MOSFET P-CH 150V 2A 8-Pin SOIC N T/R
RoHS: Compliant		157
  • 100:$1.0176
  • 25:$1.1418
  • 10:$1.2686
  • 1:$1.4601
SI4455DY-T1-GE3
DISTI # V36:1790_09216500		Vishay IntertechnologiesTrans MOSFET P-CH 150V 2A 8-Pin SOIC N T/R
RoHS: Compliant		0
  • 2500000:$0.6477
  • 1250000:$0.6478
  • 250000:$0.6543
  • 25000:$0.6635
  • 2500:$0.6650
SI4455DY-T1-GE3
DISTI # SI4455DY-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 150V 2A 8-SO
Min Qty: 1
Container: Cut Tape (CT)		5814In Stock
  • 1000:$0.7339
  • 500:$0.9296
  • 100:$1.1253
  • 10:$1.4430
  • 1:$1.6100
SI4455DY-T1-GE3
DISTI # SI4455DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 150V 2A 8-SO
Min Qty: 1
Container: Digi-Reel®		5814In Stock
  • 1000:$0.7339
  • 500:$0.9296
  • 100:$1.1253
  • 10:$1.4430
  • 1:$1.6100
SI4455DY-T1-GE3
DISTI # SI4455DY-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 150V 2A 8-SO
Min Qty: 2500
Container: Tape & Reel (TR)		5000In Stock
  • 5000:$0.6318
  • 2500:$0.6650
SI4455DY-T1-GE3
DISTI # 30150545		Vishay IntertechnologiesTrans MOSFET P-CH 150V 2A 8-Pin SOIC N T/R
RoHS: Compliant		157
  • 100:$1.0176
  • 25:$1.1418
  • 10:$1.2686
SI4455DY-T1-GE3
DISTI # SI4455DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 150V 2A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4455DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.6459
  • 15000:$0.6629
  • 10000:$0.6808
  • 5000:$0.6997
  • 2500:$0.7197
SI4455DY-T1-GE3
DISTI # SI4455DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 150V 2A 8-Pin SOIC N T/R (Alt: SI4455DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4455DY-T1-GE3
    DISTI # 781-SI4455DY-GE3    		Vishay IntertechnologiesMOSFET -150V Vds 20V Vgs SO-8
    RoHS: Compliant    		2826
    • 1:$1.6100
    • 10:$1.3700
    • 100:$1.0700
    • 500:$0.9140
    • 1000:$0.7210
    • 2500:$0.6640
    • 5000:$0.6310
    • 10000:$0.6170
    SI4455DY-T1-GE3Vishay IntertechnologiesMOSFET -150V Vds 20V Vgs SO-8
    RoHS: Compliant    		Americas -
      SI4455DY-T1-GE3Vishay Intertechnologies 1197
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        Disponibilidad
        Valores:
        Available
        En orden:
        1986
        Ingrese la cantidad:
        El precio actual de SI4455DY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        1,66 US$
        1,66 US$
        10
        1,36 US$
        13,60 US$
        100
        1,04 US$
        104,00 US$
        500
        0,90 US$
        451,00 US$
        1000
        0,71 US$
        712,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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