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IRL3803PBF

IRL3803PBF
Mfr. #:
IRL3803PBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFT 30V 120A 6mOhm 93.3nC LogLvAB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRL3803PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IRL3803PBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
120 A
Rds On - Resistencia de la fuente de drenaje:
9 mOhms
Vgs - Voltaje puerta-fuente:
16 V
Qg - Carga de puerta:
93.3 nC
Pd - Disipación de energía:
150 W
Configuración:
Único
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
4.4 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
SP001557982
Unidad de peso:
0.211644 oz
Tags
IRL3803, IRL38, IRL3, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.006Ohm;ID 140A;TO-220AB;PD 200W;VGS +/-16V
***ure Electronics
Single N-Channel 30 V 0.006 Ohm 140 nC HEXFET® Power Mosfet - TO-220-3
***p One Stop Japan
Trans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 200 W
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:140A; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:140A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:480A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Parte # Mfg. Descripción Valores Precio
IRL3803PBF
DISTI # V36:1790_13892854		Infineon Technologies AGTrans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		7220
  • 1000:$1.0253
  • 500:$1.1971
  • 100:$1.3430
  • 10:$1.6055
  • 1:$1.8230
IRL3803PBF
DISTI # IRL3803PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 140A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		836In Stock
  • 1000:$1.2661
  • 500:$1.5281
  • 100:$1.9647
  • 10:$2.4450
  • 1:$2.7100
IRL3803PBF
DISTI # 30658236		Infineon Technologies AGTrans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		7220
  • 1000:$1.0253
  • 500:$1.1971
  • 100:$1.3430
  • 10:$1.6055
  • 8:$1.8230
IRL3803PBF
DISTI # 29731021		Infineon Technologies AGTrans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		2940
  • 1000:$1.1136
  • 500:$1.3344
  • 100:$1.5264
  • 15:$1.9104
IRL3803PBF
DISTI # 30700755		Infineon Technologies AGTrans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1000
  • 200:$1.3770
  • 100:$1.4535
  • 50:$1.5555
  • 10:$2.0145
  • 7:$3.9015
IRL3803PBF
DISTI # IRL3803PBF		Infineon Technologies AGTrans MOSFET N-CH 30V 140A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRL3803PBF)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$0.9139
  • 600:$0.8809
  • 1100:$0.8499
  • 2500:$0.8209
  • 5000:$0.8059
IRL3803PBF
DISTI # 38K3072		Infineon Technologies AGMOSFET Transistor, N Channel, 120 A, 30 V, 6 mohm, 10 V, 1 V RoHS Compliant: Yes991
  • 1:$2.3400
  • 10:$1.9900
  • 100:$1.5900
  • 500:$1.3900
  • 1000:$1.1600
IRL3803PBF
DISTI # 70017617		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 0.006Ohm,ID 140A,TO-220AB,PD 200W,VGS +/-16V
RoHS: Compliant		0
  • 1:$2.1580
  • 10:$1.9040
  • 100:$1.6600
  • 500:$1.4390
  • 1000:$1.2700
IRL3803PBF
DISTI # 942-IRL3803PBF		Infineon Technologies AGMOSFET MOSFT 30V 120A 6mOhm 93.3nC LogLvAB
RoHS: Compliant		1030
  • 1:$2.3400
  • 10:$1.9900
  • 100:$1.5900
  • 500:$1.3900
  • 1000:$1.1600
IRL3803PBF
DISTI # 5409979		Infineon Technologies AGMOSFET N-CH 30V 140A LOGICFET TO220AB, EA215
  • 1:£2.5400
  • 10:£1.4400
  • 25:£1.4100
IRL3803PBF
DISTI # 5409979P		Infineon Technologies AGMOSFET N-CH 30V 140A LOGICFET TO220AB, TU171
  • 10:£1.4400
  • 25:£1.4100
IRL3803PBFInternational Rectifier 60
    IRL3803PBF
    DISTI # IRL3803PBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,120A,150W,TO220AB100
    • 1:$1.4100
    • 3:$1.2900
    • 10:$1.0800
    • 50:$0.9300
    IRL3803PBF
    DISTI # IRL3803PBF    		Infineon Technologies AGN-LogL 30V 140A 200W 0,006R TO220AB
    RoHS: Compliant    		1180
    • 10:€0.9745
    • 50:€0.7345
    • 200:€0.6745
    • 500:€0.6495
    IRL3803PBF
    DISTI # 8651035    		Infineon Technologies AGMOSFET, N, 30V, 120A, TO-220
    RoHS: Compliant    		991
    • 5:£1.5300
    • 25:£1.3800
    • 100:£1.2200
    • 250:£1.1500
    • 500:£1.0700
    IRL3803PBF
    DISTI # 8651035    		Infineon Technologies AGMOSFET, N, 30V, 120A, TO-220
    RoHS: Compliant    		991
    • 1:$3.7100
    • 10:$3.1500
    • 100:$2.5200
    • 500:$2.2000
    • 1000:$1.8400
    IRL3803PBF
    DISTI # C1S322000501580    		Infineon Technologies AGTrans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		1000
    • 500:$1.0500
    • 200:$1.0800
    • 100:$1.1400
    • 50:$1.2200
    • 10:$1.5800
    • 1:$3.0600
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    Disponibilidad
    Valores:
    776
    En orden:
    2759
    Ingrese la cantidad:
    El precio actual de IRL3803PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,71 US$
    1,71 US$
    10
    1,45 US$
    14,50 US$
    100
    1,16 US$
    116,00 US$
    500
    1,01 US$
    505,00 US$
    1000
    0,84 US$
    843,00 US$
    2000
    0,83 US$
    1 662,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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