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2SK4100LS

2SK4100LS
Mfr. #:
2SK4100LS
Fabricante:
Rochester Electronics, LLC
Descripción:
Power Field-Effect Transistor, 6A I(D), 650V, 1.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
2SK4100LS Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
2SK4100L, 2SK4100, 2SK410, 2SK41, 2SK4, 2SK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***p One Stop
Trans MOSFET N-CH 650V 6A 3-Pin(3+Tab) TO-220FI
***nell
MOSFET, N CH 650V 6A TO220; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:650V; Cont Current Id:6A; On State Resistance:1.35ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:5V; Case Style:TO-220FI; Termination Type:Through Hole; Power Dissipation:2W; Transistor Case Style:TO-220FI
***ical
Trans MOSFET N-CH 650V 7.2A 3-Pin(2+Tab) DPAK T/R
***ark
Mosfet, N-Ch, 650V, 7.2A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:7.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***ineon SCT
Single N-Channel 650V 650 mOhm 23 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS
***ark
Mosfet, N-Ch, 650V, 10.1A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***itex
Transistor: N-MOSFET; unipolar; 650V; 10.1A; 0.65ohm; 28W; -40+150 deg.C; THT; TO220F
***ark
Mosfet, N-Ch, 650V, 10.1A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***i-Key
MOSFET N-CH 650V 7A TO-220
***inecomponents.com
650V N-Channel Advance Q-FET C-Series
***ser
MOSFETs N-CH/650V/7A/QFET
***-Wing Technology
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***icroelectronics
N-channel 650 V, 0.56 Ohm, 7 A MDmesh(TM) V Power MOSFET in IPAK
***r Electronics
Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N CH, 650V, 7A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.56ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 70W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***emi
N-Channel Power MOSFET, SuperFET® II, FAST, 600 V, 4.5 A, 900 mΩ, DPAK
***ure Electronics
FCD900N60Z Series 600 V 4.5 A N-Channel SuperFET® II Mosfet -TO-252, (D-Pak)
*** Stop Electro
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Parte # Mfg. Descripción Valores Precio
2SK4100LS-T-MG5
DISTI # 2SK4100LS-T-MG5		ON Semiconductor- Bulk (Alt: 2SK4100LS-T-MG5)
Min Qty: 246
Container: Bulk		Americas - 0
  • 1230:$1.1900
  • 2460:$1.1900
  • 246:$1.2900
  • 492:$1.2900
  • 738:$1.2900
2SK4100LS-T-MG5ON SemiconductorSWITCHING DEVICE
RoHS: Not Compliant		28972
  • 1000:$1.3400
  • 500:$1.4100
  • 100:$1.4700
  • 25:$1.5300
  • 1:$1.6500
2SK4100LSSANYO Semiconductor Co LtdPower Field-Effect Transistor, 6A I(D), 650V, 1.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Not Compliant		958
  • 1000:$0.4000
  • 500:$0.4200
  • 100:$0.4300
  • 25:$0.4500
  • 1:$0.4900
Imagen Parte # Descripción
2SK4004

Mfr.#: 2SK4004

OMO.#: OMO-2SK4004-1190

 Nuevo y original
2SK4016

Mfr.#: 2SK4016

OMO.#: OMO-2SK4016-1190

 Nuevo y original
2SK4059TK-BK

Mfr.#: 2SK4059TK-BK

OMO.#: OMO-2SK4059TK-BK-1190

 Nuevo y original
2SK4059TV-B (T5LCE)

Mfr.#: 2SK4059TV-B (T5LCE)

OMO.#: OMO-2SK4059TV-B-T5LCE--1190

 Nuevo y original
2SK4101FS

Mfr.#: 2SK4101FS

OMO.#: OMO-2SK4101FS-1190

 - Bulk (Alt: 2SK4101FS)
2SK4101LS-MG5,2SK4101,K4

Mfr.#: 2SK4101LS-MG5,2SK4101,K4

OMO.#: OMO-2SK4101LS-MG5-2SK4101-K4-1190

 Nuevo y original
2SK4110,2SK4106,2SK4042

Mfr.#: 2SK4110,2SK4106,2SK4042

OMO.#: OMO-2SK4110-2SK4106-2SK4042-1190

 Nuevo y original
2SK4212A-ZK-E1-AY

Mfr.#: 2SK4212A-ZK-E1-AY

OMO.#: OMO-2SK4212A-ZK-E1-AY-1190

 Small Signal Field-Effect Transistor, 48A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
2SK4213-ZK-E1

Mfr.#: 2SK4213-ZK-E1

OMO.#: OMO-2SK4213-ZK-E1-1190

 Nuevo y original
2SK439

Mfr.#: 2SK439

OMO.#: OMO-2SK439-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de 2SK4100LS es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,60 US$
0,60 US$
10
0,57 US$
5,70 US$
100
0,54 US$
54,00 US$
500
0,51 US$
255,00 US$
1000
0,48 US$
480,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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